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FSV10100V — 10 A, 100 V Ultra-Low VF Schottky Rectifier
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV10100V Rev. 1.2
September 2015
FSV10100V
10 A, 100 V Ultra-Low VF Schottky Rectifier
Features
• Ultra-Low Forward Voltage Drop
• Low Thermal Resistance
• Very Low Profile: Typical Height of 1.1 mm
• Trench Schottky Technology
• RoHS Compliant
• Green Molding Compound as per IEC61249 Standard
• Lead Free in Compliance with EU RoHS 2011/65/EU Directive
• Qualified per AEC-Q101 Rev. C Standard
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
FSV10100V FSV10100V TO-277 3L Tape and Reel
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 100 V
VRWM Working Peak Reverse Voltage 100 V
VRMS RMS Reverse Voltage 70 V
VRDC Blocking Voltage 100 V
IF(AV) Average Rectified Peak Forward Surge Current 10 A
IFSM Non-Repetitive Peak Forward Surge Current 180 A
TJOperating Junction Temperature Range -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Anode 2
Anode 1
3
Cathode
1
3
TO-277
2
FSV10100V — 10 A, 100 V Ultra-Low VF Schottky Rectifier
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV10100V Rev. 1.2 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. The thermal resistances (RθJA & ψJL) are characterized with device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm
(big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2).
Force line trace size = 55 mils, sense line trace size = 4 mils.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Minimum
Land Pattern Maximum
Land Pattern Unit
RθJA Junction-to-Ambient Thermal Resistance 100 40 °C/W
ψJL
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Anode 15 12
°C/W
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Cathode 65
Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper
Symbol Parameter Conditions Min. Typ. Max. Unit
BVRBreakdown Voltage IR = 0.5 mA 100 V
VFForward Voltage Drop
IF = 5 A 0.513
V
IF = 5 A, TA = 125°C 0.463
IF = 10 A 0.625 0.670
IF = 10 A, TA = 125°C 0.575 0.600
IRReverse Current
VR = 70 V 0.0072
mA
VR = 70 V, TA = 125°C 6.486
VR = 100 V 0.0165 0.060
VR = 100 V, TA = 125°C 16.72 20
CJJunction Capacitance VR = 4 V, f = 1 MHz 796 pF
Trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A 22.94 ns
F
S
F
S
F
S
F
S
F
S
FSV10100V — 10 A, 100 V Ultra-Low VF Schottky Rectifier
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSV10100V Rev. 1.2 3
Typical Performance Characteristics
Figure 3. Typical Reve rse Characteristics Figure 4. Typical Forward Characteristics
Figure 5. Typical Junction Capacitance Figure 6. Maximum Non-repetitive Peak Forward
Surge Current
Figure 7. Forward Current Derating Curve
10 20 30 40 50 60 70 80 90 100
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
TA=150oC
TA= 75oC
TA= 25oC
TA= -55oC
TA= 125oC
Reverse Current, IR [mA]
Reverse Voltage, VR [V]
0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
TA= -55oC
TA= 75oC
TA= 125oC
TA= 25oC
TA= 150oC
Forward Voltage, VF [V]
Forward Current, IF [A]
0.1 1 10 100
10
100
1000
10000
Junction Capacitance, CJ [pF]
Reverse Voltage, VR [V]
1 10 100
0
50
100
150
200
250
Peak Forward Surge Current [A]
Number of Cycles
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
TA (3cm x 3cm Pad)
Average Forward Current, IF [A]
Ambient / Lead Temperature, [oC]
TL (Cathode, 3cm x 3cm Pad)
1.15 MIN
4.15 MIN
1.97
1.45 MIN
4.65 MIN
2.75
1.00
(0.35)
1.20
1.00
0.40
0.23
0.01
SEATING
PLANE
C
6.65
6.35
6.15
5.67
4.63
4.25
1.40
1.10
(2X)
0.63
0.43
(2X)
AB
2.25
1.95 4.15
3.25 2.20
2.00
1.25
0.90
D
4.90
4.23
(0.25)
3.680
0.913
4.75 MAX
0.60
DAP OPTION
NOTES: UNLESS OTHERWISE SPECIFIED
A. PACKAGE REFERENCE: JEDEC TO-277
B. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH, AND TIE BAR
EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D
DOES NOT COMPLY TO JEDEC
STANDARD VALUE.
E. DRAWING FILENAME: MKT-TO277A03rev5
TOP VIEW
LAND PATTERN RECOMMENDATION
BOTTOM VIEW - DAP OPTION
FRONT VIEW
BOTTOM VIEW
D
D
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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