PON TAG SEMICONDUCTORS LTD b3 DE Pf assyzso OOoOO?e24 & TTT 8834750 TAG SEMICONDUCTORS LTO 63C 00724 OT RS-IS TAG SEMICONDUCTORS LTD ; 7 . SO0410BH _ _ : ap S0410NH SCRS + 4.0A 200-800V 10-25mA The S040 series silicon controlled rectifiers are high performance glass passivated PNPN devices. These parts are intended for general purpose high voltage applications where moderate gate insensitivity is required. Absolute Maximum Ratings Ta=25C unless otherwise noted Parameter Part Nr. Symbol Min. Max. Unit Test Conditions : - Repetitive Peak $0410BH 200 Vv Off State Voltage == 9410DH [ Vpam 400 VV [Ti=-40C to 125C : $0410MH yore] 600 Vv [ Rek=1KQ | : $0410NH 800 Vv . On-State Current - trRMs) 4.0 A Ali Conduction Angles Tc = 85C Average On-State Current ItAv} 2.5 A Half Cycle, O = 180 Te= 85C Nonrept. On-State Current ITsm 55 A Half Cycle, 60 Hz Nonrept. On-State Current ITsm 50 A Half Cycle, 50 Hz Fusing Current Pt 12.5 As t=10ms, Half Cycle : Peak Gate Current Iom 2 A 10us max. : Peak Gate Dissipation Poem 5 WwW 10s max. Gate Dissipation PgiAv) 0.5 Ww 20 ms max. ~ Operating Temperature Tj ~40 125 : Storage Temperature Tstg -40 125 C . " Soldering Temperature Teta 250 C 1.6 mm from case, 10s max. - . Electrical Characteristics Ta = 25 C unless otherwise noted | $04 Parameter Symbol Min. Max. Unit Test Conditions Off-State Leakage Current lpRM/lRRM 0.5 mA @VprM + Varo. Rex =1KQ, Tj= 125C Off-State Leakage Current lorw/IRRM 5 pA @Vprm + Varm. Rak=1KQ, Tj = 25C On-State Voltage VT 2.95 V at Ip= 8A, Tj= 25C - On-State Threshold Voltage Vi(TO) 125 V Tj=125C : On-State Slope Resistance IT 260) mQ Tj= 125C : Gate Trigger Current let 10 25 mA Vp=7V . : Gate Trigger Voltage VG6T 2.0 Vo Vp=7V . . . Holding Current ly 75. mA Reax=1KQ : Latching Current IL 150. mA Rex=1kQ : _ Critical Rate of Voltage Rise dv/dt 200 V/us Vp =.67xVprm Rex=1KQ Tj= 125C : Critical Rate of Current Rise di/dt 100 A/us Iqg=125 mA dig/dt =1.25 A/us Tj = 125 C Gate Controlled Delay Time tga 500 ns Ig = 125 mA dig/dt = 1.25 A/us - Commutated Turn- Off Time > tg . 50 us Toe= 85 C Vp = .67xVpRM . VR=35 V p= IT(AV) Thermal Resistance junc. to case Rejc 5 K/W Thermal Resistance junc. to amb. Roja 60 K/W 66 TAG SEMICONDUCTORS LTD 8834750 TAG SEMICONDUCTORS LTD 63C 00725 OT -AQAS-I3 - TAG SEMICONDUCTORS LTD Typical Characteristics $04 - Chips Leakage Currant vs Junction Temperature (typical) Normalized DC Gate Trigger Voitage vs Junction Temperature {typical} 1000 7 1.6 z 1.5 = 100 9 1.4 x 2 3 5 s 1.3 2 Sle 1.2 & 10 5 141 a i> 1.0 3 09 Zz 1 3 08 g [4 a 0.7 0.3 0.8 0.6 -55 -30 Q +25 50 75 100 125 -55 -30 25 50 75 100 125 Junction Temperature Tj (C} Junction Temperature Tj (C) Normatized DC Gate Trigger Current va Normalized DC Latching Current vs Junction Temperature (typical) Junction Temparature (typical) 2.4 2.4 2.2 2.2 _ 2.0 2.0 2 1.8 > 1.8 w -|9 1.6 ala 18 Pia 1.4 =|E 1.4 = E i 1.2 S12 J* 1.0 3 1.0 2 08 Ss 08 = 06 = 0.6 0.4 0.4 0.2 0.2 0 0 ~ -55 -30 Qo 26 50 75 100 (125 -55 -30 0 25 50 76 100 (125 Junction Temperature Fj (C) Junction Temperature Tj (C) Normalized DC Holding Current vs Junction Temporature (typical) - 2.4 2.2 2.0 S 1.8 5 1.6 N Fit 44 Ee = 1.2 3 14.0 2 08 . . 06 0.4 0.2 oO -65 -30 o 26 50 75 100 125 . ~ Junction Temperature Tj (C} - I 67 { oad Fa TAG SEMICONDUCTORS LTD 63 DEBassuzso cooozan o ff Bs a A 5 8834750 TAG SEMICONDUCTORS. LTD _ 63C 00726 TAS7I3 |. TAG SEMICONDUCTORS LTD Typical Characteristics & $04 - Packaged Parts Max. Allowed Multi Cycle Surge (On-State) Max. Allowed Single Cycle Surge (On-State) Currant vs Number of Consecutive Cycles Current vs Surge Current Duration 100 8 a o o 50 30 20 a So oa 10 8 Fusing Current 12 (as) Max. Allowed Surge Current (Non-Repetitive} Max. Allowed Single Cycle Surge Current (Non-Repetitive) tsm (A) nN Its (A} NQ a 1 23 65 10 20 60 100 200 . 50 100 200 300 6001000 2000 10000 Number of Consecutive 50/60 Hz Cycles Pulse Duration tp (p13) Instantaneous On-State Current vs On-State Average On-State Currant vs Case Temperature Voltage with Junction Temperature as Parameter 78 f Za i Y : Hpac A / Hy 126 Average On-State Current IT (Av) (A) Instantaneous On-State Current IT (A) 6.0 2.5 oO ange Qo 25 50 75 100 125 0.6 1 2 3 4 Case Temperature Tg (C) On-State Voltage VTm (V} Power Dissipation vs Average On-State Max. All. Power Dissip.vs Ambient Temp. with Current with Phase Conducting Angles as Parameter given Heatsink Thermal Resistances as Parameter 9 8 : z= = 7 c @ 6 & g 6 a a . ; 2 2 2 g 4 ; Q ae g $ = 2 zs ? 1 oO 0 0.5 1.0 1.6 2.0 2.5 Qo 25 50 76 400 125 Average On-State Current IT (AV) (A) Ambient and Case Temperature Ta, T, (C)