BCP69 PNP General-Purpose Amplifier Description 4 This device is designed for general-purpose mediumpower amplifiers and switches requiring collector currents to 1.0 A. Sourced from process 77. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking Package Packing Method BCP69 BCP69 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage Parameter -20 V VCBO Collector-Base Voltage -30 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -1.5 A TJ Junction Temperature 150 C -55 to +150 C TSTG Storage Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 2003 Fairchild Semiconductor Corporation BCP69 Rev. 1.1.0 www.fairchildsemi.com BCP69 -- PNP General-Purpose Amplifier November 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Max. Unit 1.0 W Derate Above 25C 8.0 mW/C Thermal Resistance, Junction-to-Ambient 125 C/W Total Device Dissipation Note: 3. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2. Electrical Characteristics(4) Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -20 V BVCBO Collector-Base Breakdown Voltage IC = -1.0 mA, IE = 0 -30 V BVEBO Emitter-Base Breakdown Voltage IE = -100 A, IC = 0 -5.0 V VCB = -25 V, IE = 0 -100 nA ICBO Collector-Base Cut-Off Current VCB = -25 V, IE = 0, TJ = 150C -10 A IEBO Emitter-Base Cut-Off Current VEB = -5.0 V, IC = 0 -100 nA IC = -5 mA, VCE = -1.0 V hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) 50 IC = -500 mA, VCE = -1.0 V 85 IC = -1.0 A, VCE = -1.0 V 60 375 IC = -1.0 A, IB = -100 mA -0.5 V Base-Emitter On Voltage IC = -1.0 A, VCE = -1.0 V -1.0 V Ccb Collector-Base Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz 30 pF hfe Small-Signal Current Gain IC = -50 mA, VCE = -10 V, f = 20 MHz 2.5 Note: 4. Pulse test: pulse width 300 s, duty cycle 2.0% (c) 2003 Fairchild Semiconductor Corporation BCP69 Rev. 1.1.0 www.fairchildsemi.com 2 BCP69 -- PNP General-Purpose Amplifier Thermal Characteristics(3) V CESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE- TYP ICAL PULSED CURRE NT GAIN 300 V CE = 5.0V 250 1 0.8 125 C 200 0.6 150 25 C - 40 C IC 0.1 1 - COLLECTOR CURRENT (A) 2 V BE(O N)- BASE-E MITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAG E (V) 0.8 - 40 C 25 C 0.6 125 C 0.4 1 10 100 I C - COLLECTOR CURRENT ( mA) 0 0.01 1000 0.8 - 40 C COBO- COLLECTOR-BASE CAPACITANCE (pF) V CB = 2 0V 10 1 0.1 150 Figure 5. Collector Cut-Off Current vs. Ambient Temperature (c) 2003 Fairchild Semiconductor Corporation BCP69 Rev. 1.1.0 25 C 0.6 125 C VCE = 5.0 V 0.4 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Figure 4. Base Emitter On Voltage vs. Collector Current 100 50 75 100 125 T A - AM BIENT TE MPE RATURE (C) 3 1 Figure 3. Base-Emitter Saturation Voltage vs. Collector Current 25 0.1 1 I C - COLLE CTOR CURRENT (A) Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current = 10 1 125 C - 40 C 0.2 50 0 0.01 25 C 0.4 100 Figure 1. Typical Pulsed Current Gain vs. Collector Current I CBO - COLLECTOR CURRENT (nA) = 10 40 f = 1.0 MHz 30 20 10 0 0 10 20 V CB- COLLECTOR-BASE VOLTAGE (V) 30 Figure 6. Collector-Base Capacitance vs. Collector-Base Voltage www.fairchildsemi.com 3 BCP69 -- PNP General-Purpose Amplifier Typical Performance Characteristics V CE = 10V PC[W], POWER DISSIPATION f T - GAIN BANDWIDTH PRODUCT (MHz) 1 .5 250 200 150 100 50 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 0 .5 0 .0 0 25 50 75 100 1 25 1 50 o T a [ C ], A M B IE N T T E M P E R A T U R E Figure 8. Power Dissipation vs. Ambient Temperature Figure 7. Gain Bandwidth Product vs. Collector Current (c) 2003 Fairchild Semiconductor Corporation BCP69 Rev. 1.1.0 1 .0 www.fairchildsemi.com 4 BCP69 -- PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) APPROVED July-14-2008 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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