4 LINE BIDIRECTIONAL or
5 LINE UNIDIRECTIONAL TVSarray ™
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page
1
Copyright 2003
03-11-2003 REV D
WWW.
M
icrosemi
.COM
SCOTTSDALE DIVISION
SMS05C thru SMS24C
SMS03C thru SMS24C
DESCRIPTION APPEARANCE
This 6 pin 4-line bidirectional or 5-line unidirectional array is designed for
use in applications where protection is required at the board level from
voltage transients caused by electrostatic discharge (ESD) as defined by
IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-4-4 and other
induced voltage surges that can damage sensitive circuitry.
These arrays are used to protect 4 discrete lines utilizing pins 1,3,4,6
with a common pin 5 configuration to ground for bidirectional protection and
pin 2 is not connected. It may also be used to protect 5 lines utilizing pins
1,3,4,5,6 with a common pin 2 connection to ground.
These Transient Voltage Suppressor (TVS) diode arrays protect 5 volt
components such as DRAM’s SRAM’s CMOS, HCMOS, HSIC, and low
voltage interfaces up to 24 volts. Because of the physical size, weight and
protection capabilities, this product is ideal for use in but not limited to
miniaturized electronic equipment such as hand held instruments,
computers, computer peripherals and cell phones.
TVS array
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
• Protects 5 volt up through 24 volt components
• Protects 4 bidirectional lines or 5 unidirectional
lines as determined by connections (see 2nd page)
• Provides electrically isolated protection
• SOT 23-6L Packaging
• EIA-RS232 data rates 19.6kbs
• EIA-RS422 data rates 10Mbs
• EIA-RS423 data rates 100kbs
• Protection of data lines to:
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
MAXIMUM RATINGS MECHANICAL AND PACKAGING
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Peak Pulse power 200 watts (8/20 µs Figure 1)
• SOT 23-6L Packaging
• Molded SOT23-6L Surface Mount
• Weight .014 grams (approximate)
• Body Marked as shown below for Device Marking
• Pin one defined by DOT on top of package
• Tape & Reel per EIA Standard 481
• 3,000 pieces per 7 inch
ELECTRICAL CHARACTERISTICS BIDIRECTIONAL (See Notes for Unidirectional**)
STAND
OFF
VOLTAGE **
VWM
VOLTS
BREAKDOWN
VOLTAGE **
VBR
@1 mA
VOLTS
CLAMPING
VOLTAGE
VC
@ 1 Amp
(FIGURE 2)
VOLTS
CLAMPING
VOLTAGE
VC
@ 5 Amp
(FIGURE 2)
VOLTS
STANDBY
CURRENT
ID
@ VWM
µA
CAPACITANCE
(f=1 MHz) **
@0V
C
pF
TEMPERATURE
COEFFICIENT
OF VBR
aVBR
mV/°C
PART
NUMBER DEVICE
MARKING
MAX MIN MAX MAX MAX TYP MAX
SMS05C S5C 5.0 6.0 11 14.5 10 75 3
SMS12C S12C 12.0 13.3 21 27 1 35 10
SMS15C S15C 15.0 16.7 26 33 1 30 13
SMS24C S24C 24.0 26.7 45 56* 1 20 30
* CLAMPING VOLTAGE @3.6 Amps for both bidirectional and unidirectional
** Standoff and Breakdown Voltages for Unidirectional will be 0.6 V lower and capacitance will be twice that shown in the
table above. All other maximum characteristic values for unidirectional are the same as shown above for bidirectional.
Note: Transient Voltage Suppressor (TVS) product is normally selected based on its stand off voltage VWM. Product selected
voltage should be equal to or greater than the continuous peak operating voltage of the circuit to be protected.
4 LINE BIDIRECTIONAL or
5 LINE UNIDIRECTIONAL TVSarray ™
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page
2
Copyright 2003
03-11-2003 REV D
WWW.
M
icrosemi
.COM
SCOTTSDALE DIVISION
SMS05C thru SMS24C
SMS03C thru SMS24C
SYMBOLS & DEFINITIONS
Symbol Definition
VWM Rated stand off voltage: Maximum dc voltage that can be applied over the operating temperature range. Vwm
must be selected to be equal or be greater than the operating voltage of the line to be protected
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
VC Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time of 20 µs.
ID Standby Current: Leakage current at VWM.
C Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in Pico Farads.
OUTLINE AND CIRCUIT
.1 1 10 100 1000
FIGURE 1 FIGURE 2
Peak Pulse Power Vs Pulse Time t=µsec Pulse Wave Form
DIMENSIONS MILLIMETERS DIMENSIONS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 2.70 2.90 3.10 .106 .114 .127
A1 0.00 0.10 .000 .004
A2 1.00 1.10 1.30 .039 .043 .051
B 0.35 0.40 0.50 .014 .016 .020
C 0.10 0.15 0.25 .004 .006 .010
D 1.50 1.60 1.80 .059 .063 .071
E 1.70 1.90 2.10 .067 .075 .083
F 2.60 2.80 3.00 .102 .110 .118
G 0.20 .008
1000
100
10
Ppp Peak Pulse Power (W)
200W
