Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
050-7337 Rev - 3-2003
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Amps
Ohms
µA
nA
Volts
MIN TYP MAX
600
14 0.41
100
500
±100
35
APT6041
600
14
56
±30
±40
180
1.43
-55 to 150
300
14
30
960
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT6041CLL
600V 14A 0.410ΩΩ
ΩΩ
Ω
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7 R MOSFET TO-254
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance •Easier To Drive
• Lower Gate Charge, Qg •Hermetic TO-254 Package
•Military Screening Available
DYNAMIC CHARACTERISTICS APT6041CLL
050-7337 Rev - 3-2003
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID17A)
Reverse Recovery Time (IS = -ID17A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID17A, dlS/dt = 100A/µs)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
µC
V/ns
MIN TYP MAX
14
56
1.3
400
6.0 8
Symbol
RθJC
RθJA
MIN TYP MAX
0.70
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
IS
ISM
VSD
t rr
Q rr
dv/dt
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 14A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
ID = 14A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 14A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 400V V GS = 15V
ID = 14A, RG = 5Ω
MIN TYP MAX
1851 2300
365 550
30 50
43 70
11 14
23 40
918
36
17 26
410
246
55
380
62
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 9.80mH, RG = 25Ω, Peak IL = 14A
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID14A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.3
0.7
0.9
0.05
050-7337 Rev - 3-2003
APT6041CLL
Typical Performance Curves
0 5 10 15 20 25 30
0 1 2 3 4 5 6 7 8 9 0 5 10 15 20 25 30
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
50
45
40
35
30
25
20
15
10
5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5V
5.5V
6V
6.5
VGS =15 &10V
7V
8V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
NORMALIZED TO
VGS = 10V @ ID = 7A
ID = 7A
VGS = 10V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
50
45
40
35
30
25
20
15
10
5
0
14
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
0.268
0.431
0.00596F
0.141F
Power
(Watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature
APT6041CLL
050-7337 Rev - 3-2003
1mS
100µS
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
10,000
1,000
100
10
200
100
10
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 600 0 10 20 30 40 50
0 10 20 30 40 50 60 0.3 0.5 0.7 0.9 1.1 1.3 1.5
56
10
1
.1
16
12
8
4
0
VDS=250V
VDS=100V
VDS=400V
ID = 14A
TJ =+150°C
TJ =+25°C
Crss
Ciss
Coss
VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0 5 10 15 20 25 30 0 5 10 15 20 25 30
0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45 50
35
30
25
20
15
10
5
0
700
600
500
400
300
200
100
0
40
35
30
25
20
15
10
5
0
600
500
400
300
200
100
0
VDD = 400V
ID = 17A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING ENERGY (µJ) td(on) and td(off) (ns)
SWITCHING ENERGY (µJ) tr and tf (ns)
10mS
VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
050-7337 Rev - 3-2003
APT6041CLL
Typical Performance Curves
Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions
t
r
5 %
10 %
t
d(on)
5 %
10 %
Drain Current
Drain Voltage
Gate Voltage
90%
TJ = 125 C
Switching Energy
I
C
D.U.T.
APT15DF60B
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
90%
Gate Voltage
Drain Voltage
Drain Current
t
d(off)
10%
90%
tf
TJ = 125 C
Switching Energy
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
TO-254 Package Outline
3.81 (.150) BSC
1.14 (.045)
.89 (.035) Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.06 (.790) 17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
