DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Package ID TC = +25C 900V 7@VGS = 10V TO220AB (Type TH) 2.5A Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Mechanical Data Applications Motor Control Backlighting DC-DC Converters Power Management Functions Case: TO220AB (Type TH) Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 1.85 grams (Approximate) TO220AB (Type TH) Bottom View Top View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMN90H8D5HCT Notes: Case TO220AB (Type TH) Packaging 50 Pieces/Tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 90H8D5H =Manufacturer's Marking 90H8D5H = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 16 = 2016) WW or WW = Week Code (01 to 53) YYWW DMN90H8D5HCT Document number: DS38117 Rev. 2 - 2 1 of 7 www.diodes.com August 2016 (c) Diodes Incorporated DMN90H8D5HCT Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current, VGS = 10V TC = +25C TC = +100C ID Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Avalanche Current, L = 60mH (Note 7) Avalanche Energy, L = 60mH (Note 7) Peak Diode Recovery dv/dt IS IDM IAS EAS dv/dt Value 900 30 2.5 1.5 3 3 1.8 97 3.3 Unit V V A A A A mJ V/ns Thermal Characteristics Characteristic Symbol TC = +25C TC = +100C Total Power Dissipation Value 125 50 50 1 PD Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range RJA RJC TJ, TSTG Unit W C/W -55 to +150 C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 900 1 100 V A nA VGS = 0V, ID = 250A VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V VGS(TH) RDS(ON) VSD 3.0 4 5.5 0.84 5.0 7 1.2 V V VDS = VGS, ID = 250A VGS = 10V, ID = 1A VGS = 0V, IS = 2A Ciss Coss Crss RG Qg Qgs Qgd 470 45 0.6 1.2 7.9 2.5 2.9 16 21 17.6 17 375 2.9 pF VDS = 25V, f = 1.0MHz, VGS = 0V VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 720V, ID = 2A, VGS = 10V ns VDD = 450V, RG = 25, ID = 2A, VGS = 10V ns C dI/dt = 100A/s, VDS = 100V, IF = 2A tD(ON) tR tD(OFF) tF tRR QRR Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. DMN90H8D5HCT Document number: DS38117 Rev. 2 - 2 2 of 7 www.diodes.com August 2016 (c) Diodes Incorporated DMN90H8D5HCT 1 3.0 VGS=15V 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS= 10V VGS=20V 2.5 VGS=10V 2.0 VGS=6.0V 1.5 1.0 VGS=5.5V 0.6 125 0.4 150 0.2 0.5 VGS=5.0V 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE( V) Figure 1. Typical Output Characteristic 10 9 8 VGS=10V 7 0 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 25 -55 0.0 6 5 4 3 16 150 125 14 85 12 10 25 8 6 4 -55 2 8 16 14 12 10 ID=1A 8 6 4 2 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS= 10V 18 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 18 0.5 1 1.5 2 2.5 3 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 20 1 20 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 85 5 10 15 20 25 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 30 3 2.5 2 VGS=10V, ID=1A 1.5 1 0.5 0 0 -50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN90H8D5HCT Document number: DS38117 Rev. 2 - 2 3 of 7 www.diodes.com -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature August 2016 (c) Diodes Incorporated 8 20 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN90H8D5HCT 18 16 14 12 10 VGS=10V, ID=1A 8 6 4 2 7 6 5 ID=1mA 4 ID=250A 3 2 1 0 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Junction Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs Junction Temperature 10000 4 CT, JUNCTION CAPACITANCE (pF) f=1MHz IS, SOURCE CURRENT (A) 3.5 3 VGS=0V, TJ=85 2.5 2 VGS=0V, TJ=125 1.5 1 VGS=0V, TJ=25 VGS=0V, TJ=150 0.5 VGS=0V, TJ=-55 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Coss 100 10 Crss 1 0 0 0 Ciss 1000 0 1.2 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 10 10 RDS(ON) Limited PW =100s ID, DRAIN CURRENT (A) 8 VGS (V) 6 VDS=720V, ID=2A 4 PW =10s PW =1s PW =1ms 1 PW =10ms TJ(Max)=150 TC=25 Single Pulse DUT on infinite heatsink VGS=10V 2 PW =100ms PW =1s 0.1 0 0 1 2 3 4 5 6 7 8 Qg (nC) Figure 11. Gate Charge DMN90H8D5HCT Document number: DS38117 Rev. 2 - 2 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1000 Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com August 2016 (c) Diodes Incorporated DMN90H8D5HCT 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJC(t)=r(t) * RJC RJC=1C/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN90H8D5HCT Document number: DS38117 Rev. 2 - 2 5 of 7 www.diodes.com August 2016 (c) Diodes Incorporated DMN90H8D5HCT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO220AB (Type TH) Eb A O P A1 Q H1 01 E E2b E2a D D2a D2 D1 A2 E2 01 02 L1 b2 b L C1 e 02(2x) e1 C Ea DMN90H8D5HCT Document number: DS38117 Rev. 2 - 2 6 of 7 www.diodes.com TO220AB (Type TH) Dim Min Max Typ A 4.27 4.87 4.57 A1 1.12 1.42 1.27 A2 2.39 2.99 2.69 b 0.70 1.01 0.81 b2 1.17 1.50 1.27 c 0.30 0.53 0.38 c1 0.38 0.72 0.56 D 14.60 15.40 15.00 D1 8.40 9.00 8.70 D2 5.33 6.63 6.33 D2a 4.54 5.84 5.54 e 2.54 BSC e1 5.08 BSC E 9.88 10.50 10.16 Ea 9.90 10.45 10.10 Eb 9.90 10.65 10.25 E2 7.06 8.36 8.06 E2a 6.67 7.97 7.67 E2b 4.94 6.24 5.94 H1 5.70 6.65 6.30 L 13.00 13.80 13.40 L1 4.10 3.75 Q 2.50 2.99 2.74 OP 3.70 3.99 3.84 1 4 10 7 2 0 6 3 All Dimensions in mm August 2016 (c) Diodes Incorporated DMN90H8D5HCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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