DMN90H8D5HCT
Document number: DS38117 Rev. 2 - 2
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DMN90H8D5HCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON)
ID
TC = +25°C
900V
7Ω@VGS = 10V
2.5A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO220AB (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN90H8D5HCT
TO220AB (Type TH)
50 Pieces/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
=Manufacturer’s Marking
90H8D5H = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
Equivalent Circuit
Top View
Pin Out Configuration
Top View
Bottom View
TO220AB (Type TH)
YYWW
90H8D5H
DMN90H8D5HCT
Document number: DS38117 Rev. 2 - 2
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DMN90H8D5HCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current, VGS = 10V
Steady
State
TC = +25°C
TC = +100°C
ID
2.5
1.5
A
Maximum Body Diode Forward Current (Note 5)
IS
3
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
IDM
3
A
Avalanche Current, L = 60mH (Note 7)
IAS
1.8
A
Avalanche Energy, L = 60mH (Note 7)
EAS
97
mJ
Peak Diode Recovery dv/dt
dv/dt
3.3
V/ns
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation
TC = +25°C
PD
125
W
TC = +100°C
50
Thermal Resistance, Junction to Ambient (Note 6)
RJA
50
°C/W
Thermal Resistance, Junction to Case
RJC
1
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
900
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 900V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±30V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
3.0
4
5.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
5.5
7
VGS = 10V, ID = 1A
Diode Forward Voltage
VSD
0.84
1.2
V
VGS = 0V, IS = 2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
470
pF
VDS = 25V, f = 1.0MHz,
VGS = 0V
Output Capacitance
Coss
45
Reverse Transfer Capacitance
Crss
0.6
Gate Resistance
RG

1.2

VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
Qg

7.9

nC
VDD = 720V, ID = 2A,
VGS = 10V
Gate-Source Charge
Qgs
2.5
Gate-Drain Charge
Qgd
2.9
Turn-On Delay Time
tD(ON)
16
ns
VDD = 450V, RG = 25, ID = 2A,
VGS = 10V
Turn-On Rise Time
tR
21
Turn-Off Delay Time
tD(OFF)
17.6
Turn-Off Fall Time
tF

17

Body Diode Reverse Recovery Time
tRR
375
ns
dI/dt = 100A/μs, VDS = 100V,
IF = 2A
Body Diode Reverse Recovery Charge
QRR

2.9

µC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
DMN90H8D5HCT
Document number: DS38117 Rev. 2 - 2
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DMN90H8D5HCT
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE( V)
Figure 1. Typical Output Characteristic
VGS=5.0V
VGS=5.5V
VGS=6.0V
VGS=15V
VGS=20V
VGS=10V
0
0.2
0.4
0.6
0.8
1
012345678
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS= 10V
-55℃
25℃
85℃
125℃
150℃
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5 3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS=10V
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID=1A
0
2
4
6
8
10
12
14
16
18
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
ID, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
VGS= 10V
-55℃
25℃
85℃
125℃
150℃
0
0.5
1
1.5
2
2.5
3
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
VGS=10V, ID=1A
DMN90H8D5HCT
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DMN90H8D5HCT
0
2
4
6
8
10
12
14
16
18
20
-50 -25 025 50 75 100 125 150
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
VGS=10V, ID=1A
0
1
2
3
4
5
6
7
8
-50 -25 025 50 75 100 125 150
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
ID=250µA
ID=1mA
0
0.5
1
1.5
2
2.5
3
3.5
4
0 0.3 0.6 0.9 1.2
IS, SOURCE CURRENT (A)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VGS=0V,
TJ=-55℃
VGS=0V,
TJ=25℃
VGS=0V,
TJ=85℃
VGS=0V,
TJ=125℃
VGS=0V,
TJ=150℃
0
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0 1 2 3 4 5 6 7 8
VGS (V)
Qg (nC)
Figure 11. Gate Charge
VDS=720V, ID=2A
0.1
1
10
10 100 1000
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
TJ(Max)=150℃
TC=25℃
Single Pulse
DUT on infinite heatsink
VGS=10V
RDS(ON) Limited
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100µs PW=10µs PW=1µs
DMN90H8D5HCT
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DMN90H8D5HCT
0.001
0.01
0.1
1
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
D=0.9
D=0.7
D=0.5
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
RθJC(t)=r(t) * RθJC
RθJC=1°C/W
Duty Cycle, D=t1 / t2
DMN90H8D5HCT
Document number: DS38117 Rev. 2 - 2
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DMN90H8D5HCT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO220AB (Type TH)
D1
D
A1
E
Q
L1
L
e
e1
H1
A
ØP
b
b2
01
01
02
C
A2
Eb
C1
Ea
02(2x)
E2b
E2a
E2
D2a D2
TO220AB (Type TH)
Dim
Min
Max
Typ
A
4.27
4.87
4.57
A1
1.12
1.42
1.27
A2
2.39
2.99
2.69
b
0.70
1.01
0.81
b2
1.17
1.50
1.27
c
0.30
0.53
0.38
c1
0.38
0.72
0.56
D
14.60
15.40
15.00
D1
8.40
9.00
8.70
D2
5.33
6.63
6.33
D2a
4.54
5.84
5.54
e
2.54 BSC
e1
5.08 BSC
E
9.88
10.50
10.16
Ea
9.90
10.45
10.10
Eb
9.90
10.65
10.25
E2
7.06
8.36
8.06
E2a
6.67
7.97
7.67
E2b
4.94
6.24
5.94
H1
5.70
6.65
6.30
L
13.00
13.80
13.40
L1
-
4.10
3.75
Q
2.50
2.99
2.74
ØP
3.70
3.99
3.84
θ1
4°
10°
7°
θ2
0°
6°
3°
All Dimensions in mm
DMN90H8D5HCT
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