BYV27/... Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features * * * * * * * Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Very fast rectification diode e.g. for switch mode power supply Mechanical Data 949539 Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Case: SOD-57 Sintered glass case Parts Table Part Type differentiation BYV27-50 Package VR = 50 V; IFAV = 2 A SOD-57 BYV27-100 VR = 100 V; IFAV = 2 A SOD-57 BYV27-150 VR = 150 V; IFAV = 2 A SOD-57 BYV27-200 VR = 200 V; IFAV = 2 A SOD-57 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Peak reverse voltage, non repetitive Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Document Number 86042 Rev. 1.6, 21-Jun-05 Test condition see electrical characteristics see electrical characteristics tp = 10 ms, half sinewave Part Symbol Value Unit BYV27-50 VRSM 55 V BYV27-100 VRSM 110 V BYV27-150 VRSM 165 V BYV27-200 VRSM 220 V BYV27-50 VR = VRRM 50 V BYV27-100 VR = VRRM 100 V BYV27-150 VR = VRRM 150 V BYV27-200 VR = VRRM 200 V IFSM 50 A IFRM 15 A www.vishay.com 1 BYV27/... Vishay Semiconductors Parameter Test condition Part Symbol Value IFAV 2 A ER 20 mJ Tj = Tstg - 55 to + 175 C Average forward current Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, Tj = 175 C Junction and storage temperature range Unit Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Test condition Junction ambient Symbol Value Unit l = 10 mm, TL = constant RthJA 45 K/W on PC board with spacing 25 mm RthJA 100 K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Forward voltage Reverse current Reverse recovery time Max Unit IF = 3 A Symbol VF Min Typ. 1.07 V IF = 3 A, Tj = 175 C VF 0.88 V VR = VRRM IR 1 A VRSM IR 100 A VR = VRRM, T j = 165 C IR 150 A I F = 0.5 A, IR = 1 A, iR = 0.25 A trr 25 ns 120 l l 100.000 - Forward Current (A) 100 80 TL= constant 60 40 F 20 0 0 5 94 9526 10 15 20 25 30 l - Lead Length ( mm ) Figure 1. Typ. Thermal Resistance vs. Lead Length www.vishay.com 2 10.000 Tj = 175 C 1.000 Tj = 25C 0.100 0.010 I RthJA-Therm. Resist.Junction/ Ambient ( K/W) Typical Characteristics (Tamb = 25 C unless otherwise specified) 0.001 0.0 16382 0.5 1.0 1.5 2.0 V F - Forward Voltage ( V ) 2.5 Figure 2. Forward Current vs. Forward Voltage Document Number 86042 Rev. 1.6, 21-Jun-05 BYV27/... Vishay Semiconductors V R = VRRM half sinewave RthJA = 45 K/W l = 10 mm 2.0 1.5 1.0 0.5 R thJA = 100 K/W PCB: d = 25 mm 0.0 0 20 40 60 V R = VRRM 60 50 30 10 0 25 100 CD - Diode Capacitance ( pF ) V R = VRRM I R - Reverse Current (A) 50 75 100 125 150 175 Tj - Junction Temperature ( C ) Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 1000 100 10 1 16384 PR-Limit @80 % VR 20 16385 Figure 3. Max. Average Forward Current vs. Ambient Temperature 25 PR-Limit @100 % VR 40 80 100 120 140 160 180 Tamb - Ambient Temperature (C ) 16383 70 PR - Reverse Power Dissipation ( mW) I FAV -Average Forward Current( A ) 2.5 50 75 100 125 150 175 Tj - Junction Temperature ( C ) Figure 4. Reverse Current vs. Junction Temperature f = 1 MHz 80 60 40 20 0 0.1 1.0 10.0 100.0 V R - Reverse Voltage ( V ) 16386 Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. 94 9538 Cathode Identification ISO Method E 0.82 (0.032) max. 26(1.014) min. Document Number 86042 Rev. 1.6, 21-Jun-05 4.0 (0.156) max. 26(1.014) min. www.vishay.com 3 BYV27/... Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 86042 Rev. 1.6, 21-Jun-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1