BYV27/...
Document Number 86042
Rev. 1.6, 21-Jun-05
Vishay Semiconductors
www.vishay.com
1
949539
Ultra Fast Avalanche Sinterglass Diode
Features
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Very fast rectification diode e.g. for switch mode
power supply
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per MIL-
STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Package
BYV27-50 VR = 50 V; IFAV = 2 A SOD-57
BYV27-100 VR = 100 V; IFAV = 2 A SOD-57
BYV27-150 VR = 150 V; IFAV = 2 A SOD-57
BYV27-200 VR = 200 V; IFAV = 2 A SOD-57
Parameter Test condition Part Symbol Value Unit
Peak reverse voltage, non
repetitive
see electrical characteristics BYV27-50 VRSM 55 V
BYV27-100 VRSM 110 V
BYV27-150 VRSM 165 V
BYV27-200 VRSM 220 V
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics BYV27-50 VR = VRRM 50 V
BYV27-100 VR = VRRM 100 V
BYV27-150 VR = VRRM 150 V
BYV27-200 VR = VRRM 200 V
Peak forward surge current tp = 10 ms, half sinewave IFSM 50 A
Repetitive peak forward current IFRM 15 A
e2
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Document Number 86042
Rev. 1.6, 21-Jun-05
BYV27/...
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Average forward current IFAV 2A
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I(BR)R = 1 A, Tj = 175 °C ER20 mJ
Junction and storage
temperature range
Tj = Tstg - 55 to + 175 °C
Parameter Test condition Symbol Value Unit
Junction ambient l = 10 mm, TL = constant RthJA 45 K/W
on PC board with spacing
25 mm
RthJA 100 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 3 A VF1.07 V
IF = 3 A, Tj = 175 °C VF0.88 V
Reverse current VR = VRRM IR1µA
VRSM IR100 µA
VR = VRRM, T j = 165 °C IR150 µA
Reverse recovery time I F = 0.5 A, IR = 1 A, iR = 0.25 A trr 25 ns
Parameter Test condition Part Symbol Value Unit
Figure 1. Typ. Thermal Resistance vs. Lead Length
0
0
20
40
60
80
120
R –Therm. Resist.Junction/ Ambient ( K/W)
thJA
l – Lead Length ( mm )
94 9526
51015 25
30
20
100
ll
TL= constant
Figure 2. Forward Current vs. Forward Voltage
I – Forward Current (A)
0.001
0.010
0.100
1.000
10.000
100.000
0.0 0.5 1.0 1.5 2.0 2.5
V
F
– Forward Voltage(V)
16382
F
T
j
=25°C
T
j
= 175 °C
BYV27/...
Document Number 86042
Rev. 1.6, 21-Jun-05
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Reverse Current vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
0 20 40 60 80 100 120 140 160 180
T
amb
– Ambient Temperature (°C )
16383
I –Average Forward Current( A )
FAV
V
R
=V
RRM
half sinewave
R
thJA
=45K/W
l=10mm
R
thJA
= 100 K/W
PCB:d=25mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
– Junction Temperature (°C )
16384
V
R
=V
RRM
I – Reverse Current (A)
R
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
0
10
20
30
40
50
60
70
25 50 75 100 125 150 175
T
j
– Junction Temperature ( °C )
16385
V
R
=V
RRM
P – Reverse Power Dissipation ( mW)
R
P
R
–Limit
@100 % V
R
P
R
–Limit
@80%V
R
0
20
40
60
80
100
0.1 1.0 10.0 100.0
V
R
– Reverse Voltage(V)
16386
C – Diode Capacitance ( pF )
D
f=1MHz
CathodeIdentification
0.82 (0.032) max.
SinteredGlass Case
SOD-57
94 9538
26(1.014) min. 26(1.014) min.
ISO MethodE
3.6 (0.140)max.
4.0 (0.156) max.
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Document Number 86042
Rev. 1.6, 21-Jun-05
BYV27/...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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