REJ03G1877-0200 Rev.2.00 Mar 04, 2010
Page 1 of 6
Preliminary
RJK0454DPB
Silicon N Channel Power MOS FET
Power Switching REJ03G1877-0200
Rev.2.00
Mar 04, 2010
Features
High speed switching
Low drive current
Low on-resistance
RDS(on) = 3.9 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
High densit y mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
G
D
SSS
4
123
5
1, 2, 3 Source
4 Gate
5 Drain
1234
5
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 40 V
Gate to source voltage VGSS 20 V
Drain current ID 40 A
Drain peak current ID(pulse)Note1 160 A
Body-drain diode reverse drain current IDR 40 A
Avalanche current IAP Note 2 40 A
Avalanche energy EAR Note 2 13 mJ
Channel dissipation Pch Note3 55 W
Channel to Case Thermal Resistance ch-C 2.27 C/W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L=10uH, Tch = 25 C, Rg 50
3. Tc = 25C
RJK0454DPB Preliminary
REJ03G1877-0200 Rev.2.00 Mar 04, 2010
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 40 V ID = 10 mA, VGS = 0 V
Gate to source leak current IGSS0.1 A VGS = 20 V, VDS = 0 V
Zero gate voltage drain current IDSS1 A VDS = 40 V, VGS = 0 V
Gate to source cutoff voltage VGS(off) 2.0 4.0 V VDS = 10 V, ID = 1 mA
Static drain to source on state resistance RDS(on)3.9 4.9 m I
D = 20 A, VGS = 10 V Note4
Forward transfer admittance |yfs| — 40 S ID = 20 A, VDS = 10 V Note4
Input capacitance Ciss 2000 pF
Output capacitance Coss 620 pF
Reverse transfer capacitance Crss 150 pF
VDS = 10 V, VGS = 0 V,
f = 1 MHz
Gate Resistance Rg 0.5
Total gate charge Qg 25 nC
Gate to source charge Qgs 9.0 nC
Gate to drain charge Qgd 3.0 nC
VDD = 10 V, VGS = 10 V,
ID = 40 A
Turn-on delay time td(on)10 ns
Rise time tr5.2 ns
Turn-off delay time td(off)30 ns
Fall time tf6.5 ns
VGS = 10 V, ID = 20 A,
VDD 10 V, RL = 0.5 ,
Rg = 4.7
Body–drain diode forward voltage VDF0.8 1.1 V IF = 40 A, VGS = 0 V Note4
Body–drain diode reverse recovery time trr37 ns
IF = 40 A, VGS = 0 V
diF/ dt = 100 A/ s
Notes: 4. Pulse test
RJK0454DPB Preliminary
REJ03G1877-0200 Rev.2.00 Mar 04, 2010
Page 3 of 6
Main Characteristics
0.1 1 10 100
10
100
1000
1
0.1
Drain to Source Voltage VDS (V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Drain Current ID (A)
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
VDS (on) (mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
50
40
30
20
10
0246810
50
40
30
20
10
012345
Tc = 75°C
25°C
–25°C
80
60
40
20
050 100 150 200
V
DS
= 10 V
Pulse Test
V
GS
= 3.6 V
10
11 10 100 1000
200
160
120
80
40
04 8 12 16 20
Pulse Test
I
D
= 20 A
10 A
100
V
GS
= 10 V
4.2 V
4.6 V
10 V
Pulse Test
PW = 10 ms
DC Operation
1 ms
Operation in
this area is
limited by R
DS(on)
Tc = 25°C
1 shot Pulse
5 A
4.4 V
Pulse Test
3.8 V
4.8 V
4.0 V
RJK0454DPB Preliminary
REJ03G1877-0200 Rev.2.00 Mar 04, 2010
Page 4 of 6
Case Temperature Tc (
°
C)
Static Drain to Source on State Resistance
vs. Temperature
10
8
6
4
2
–25 0 25 50 75 100 125 150
0
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch ( °C)
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
16
12
8
4
25 50 75 100 125 150
0
50
40
30
20
10
00.4 0.8 1.2 1.6 2.0
Pulse Test
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
010 4020
10000
1000
100
10
V
GS
= 0 V
f = 1 MHz
Crss
Coss
Ciss
Gate Charge Qg (nC)
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
30
40
50
20
10
0
20
16
12
8
4
10 20 30 40 50
00
I
D
= 40 A V
GS
V
DS
V
GS
= 10 V
V
GS
= 0 V
10 V
30
Pulse Test
I
D
= 20 A
V
DD
= 25 V
10 V
V
DD
= 25 V
10 V
I
AP
= 40 A
V
DD
= 15 V
duty < 0.1 %
Rg 50 Ω
RJK0454DPB Preliminary
REJ03G1877-0200 Rev.2.00 Mar 04, 2010
Page 5 of 6
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
Vin
15 V
0
I
D
VDS
IAP
V(BR)DSS
L
VDD
EAR = L IAP2
2
1VDSS
VDSS – VDD
Avalanche Test Circuit Avalanche Waveform
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Vin Monitor
D.U.T.
Vin
10 V
RL
VDS
= 10 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor 90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Rg
3
1
0.3
0.1
0.03
0.01 1 m 10 m 100 m 1 10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Tc = 25°C
PDM
PW
T
D = PW
T
RJK0454DPB Preliminary
REJ03G1877-0200 Rev.2.00 Mar 04, 2010
Page 6 of 6
Package Dimensions
0.25
M
1.3 Max
1.0
3.95
1.1 Max
4.9
5.3 Max
4.0 ± 0.2
14
5
4.2
3.3
0.07
+0.03
0.04
0.20
+0.05
0.03
0.6
+0.25
0.20
0.25
+0.05
0.03
6.1
+0.1
0.3
Previous Code
PTZZ0005DA-ALFPAKVMASS[Typ.]
0.080gSC-100 RENESAS CodeJEITA Package Code
1.27 0.40 ± 0.06
0.75 Max
0.10
(Ni/Pd/Au plating)
Unit: mm
Package Name
LFPAK
Ordering Information
Part No. Quantity Shipping Container
RJK0454DPB-00-J5 2500 pcs Taping
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