Advance Product Information
April 27, 2005
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
2 Watt 802.11a Packaged Amplifier TGA2922-SG
Key Features
• 4.9 - 6 GHz Application Frequency Range
• 11 dB Nominal Gain @ 8V 480mA
• 34 dBm Nominal P1dB @ 8V 480mA
• 2.5% EVM at 25dBm output power
• IMD3 -50dBc @ 22dBm SCL, Typical
• Bias Conditions: 7-9 V @ 480 mA (Quiescent)
•0.5 µm HFET Technology
• 2 lead Cu base SMT package
Fixtured Measured Performance
Bias Conditions: Vd = 8 V, Idq =480 mA
Performance data taken @ in a 5.75GHz
application circuit
Primary Applications
• 802.11a WLAN Bridge Amplifiers
• U-NII Band HPA
• C-Band Pt-Pt and Pt-Multi Pt Radio
The TGA2922-SG HP A provides
11dB of gain, 2 W of output power
across 4.9 - 6 GHz and 2.5% EVM
at 25 dBm output power. The device
is ideally suited for high linearity,
high power wireless dat a
applications such as 802.11a WLAN
Bridge Amplifiers, U-NII and Point-
to-Point or Point-to-Multi Point Non-
Line of Sight r adios. The package
has a high thermal conductivi ty
copper base. Internal partial
matching simplifies system board
layout by requiring a minimum of
exte rnal c omponents.
Lead-Free & RoHS compliant.
Evaluation Boards a r e available.
Product Description
0
4
8
12
16
20
24
28
32
36
40
9 1113151719212325272931
Pin (dBm)
Pout (dBm) & Gain (dB)
300
400
500
600
700
800
IDS (mA)
Pout
IDS
Gain
-12
-9
-6
-3
0
3
6
9
12
15
44.555.566.57
Frequency (GHz)
Gain (dB)
-20
-15
-10
-5
0
5
10
15
20
25
Return Loss (dB)
Gain
Input
Output
Note: This device is early in th e characte ri zation process prior t o finalizin g all electri cal specifications. Specifications are subj ect to
change without notice.
Advance Product Information
April 27, 2005
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
T A BL E I
MAXIMUM RATINGS 1/
Symbol Parameter Value Notes
Vd Drain S upply Voltage 10 V 2/
Vg Gate Supply Voltage Range 0 V to -5 V
Idq Drain S upply Current (Quiescent) 1 A 2/
| Ig | Ga te Current 19 m A
PIN Input Continuous Wave P o wer 30 dBm 2/
PDPower Dissipation 4.1 W 2/, 3/
TCH Operating Channel Temperature 175 °C4/
TMMounting Temperature (30 Seconds) 260 °C
TSTG Storage Tem pe rature -65 to 150 °C
1/ These ratings represent the maximum ope rable values for this device.
2/ Com binations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this bias condition with a base plate temperature of 85 °C, the M TTF life is 2 E+8
hours.
4/ Junction operating temperature will directly affect the device m edian time to failure (TM). For maximum
life, it is recommended that junction tem peratures be maintained at the lowest possible levels.
TG A2922-SG
Advance Product Information
April 27, 2005
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABL E II I
THERMAL INFORMATION
Parameter Test Conditions TCH
(oC) R
T
JC
(qC/W) TM
(HRS)
RθJC Thermal
Resistance
(channel to back side
of package)
Vd = 8 V
ID = 480 mA ( Quiescent)
Pdiss = 3.8 W 168 22 4 E+8
Note: Package backside SnPb soldered to carrier at 85°C baseplate temperature.
At saturat ed output power, the DC power consum ption is 5.8 W with 2 W RF power
delivered to the load. Power dissipated is 3.8 W and the temperature rise in the
channel is 84 °C.
TABLE II
RF CHARACTERIZATIO N TABLE
(TA = 25qC, Nominal)
(Vd = 8 V, Idq = 480 mA)
SYMBOL PARAMETER TEST
CONDITION TYPICAL UNITS
Gain Small Signal Gain F = 5.75 GHz 11 dB
IRL Input Return Loss F = 5.75 GHz 7 dB
ORL Output Return Loss F = 5.75 GHz 7 dB
P1dB Output Power @ P1dB F = 5.75 GHz 34 dBm
TG A2922-SG
Advance Product Information
April 27, 2005
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Co nditions: Vd = 7 V, Idq = 480 mA
Measured Fixtured Data
Applicati on Circuit tuned to 5.75 GHz
10
15
20
25
30
35
40
45
50
55
60
65
16 18 20 22 24 26 28 30
Output Power per tone (dBm)
IMD3 (dBc)
5.6GHz
5.7GHz
5.8GHz
5.9GHz
6.0GHz
0
4
8
12
16
20
24
28
32
36
40
9 1113151719212325272931
Pin (dBm )
Pout (dBm) & Gain (dB)
300
400
500
600
700
800
IDS (mA)
Pout
IDS
Gain
-12
-9
-6
-3
0
3
6
9
12
15
44.555.566.57
Frequency (G Hz)
Gain (dB)
-20
-15
-10
-5
0
5
10
15
20
25
Return Loss (dB)
Gain
Input
Output
TG A2922-SG
Advance Product Information
April 27, 2005
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Measured Fixtured Data
Applicati on Circuit tuned to 5.75 GHz
Bias Co nditions: Vd = 8 V, Idq = 480 mA
15
20
25
30
35
40
45
50
55
60
65
16 18 20 22 24 26 28 30
Ou tput Power per tone (dBm )
IMD3 (dBc)
5.6GHz
5.7GHz
5.8GHz
5.9GHz
6.0GHz
0
4
8
12
16
20
24
28
32
36
40
9 1113151719212325272931
Pin (dBm)
Pout (dBm) & Gain (dB)
300
400
500
600
700
800
IDS (mA)
Pout
IDS
Gain
-12
-9
-6
-3
0
3
6
9
12
15
44.555.566.57
Frequency (GHz)
Gain (dB)
-20
-15
-10
-5
0
5
10
15
20
25
Return Loss (dB)
Gain
Input
Output
TG A2922-SG
Advance Product Information
April 27, 2005
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Co nditions: Vd = 8 V, Idq = 480 mA
Measured Fixtured Data
Applicati on Circuit tuned to 5.75 GHz
15
20
25
30
35
40
45
50
55
60
65
16 18 20 22 24 26 28 30
Output Power per tone (dBm)
IMD3 (dBc)
5.6GHz
5.7GHz
5.8GHz
5.9GHz
6.0GHz
0
4
8
12
16
20
24
28
32
36
40
9 1113151719212325272931
Pin (dBm)
Pout (dBm) & Gain (dB)
300
400
500
600
700
800
IDS (mA)
Pout
IDS
Gain
-12
-9
-6
-3
0
3
6
9
12
15
4 4.5 5 5.5 6 6.5 7
Frequency (GHz)
Gain (dB)
-20
-15
-10
-5
0
5
10
15
20
25
Return Loss (dB)
Gain
Input
Outpu
t
TG A2922-SG
Advance Product Information
April 27, 2005
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Co nditions: Vd = 8 V, Idq = 480 mA
Measured Fixtured Data
Applicati on Circuit tuned to 5.75 GHz
O FDM 64 Q AM
0
1
2
3
4
5
6
7
8
9
14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Output Power (dBm)
EVM (%)
5.65 G Hz
5.7 G Hz
5.75 G Hz
5.8 G Hz
5.85 G Hz
TG A2922-SG
Advance Product Information
April 27, 2005
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
S-Parameter Data
Bias Conditions: Vd = 8V, Idq = 480 mA
Frequency S11 S21 S12 S22
GHz Mag (dB) Deg Mag (dB) Deg Mag (dB) Deg Mag (dB) Deg
2 -1.064 159.46 8.711 24.329 -30.877 -37.657 -5.692 164.69
2.2 -1.097 152.93 7.986 16.119 -30.802 -40.661 -5.391 161.15
2.4 -1.121 146.43 7.341 7.38 -31.149 -47.878 -5.193 157.74
2.6 -1.158 139.91 6.781 -0.744 -31.068 -51.566 -5 154.45
2.8 -1.148 133.37 6.261 -9.122 -31.133 -60.217 -4.851 150.4
3 -1.187 126.29 5.795 -17.347 -31.547 -62.038 -4.653 146.75
3.2 -1.256 118.87 5.41 -25.881 -31.602 -67.517 -4.47 143.06
3.4 -1.308 111.87 5.055 -34.21 -30.933 -72.012 -4.386 140.23
3.6 -1.319 104.46 4.757 -42.632 -31.724 -75.875 -4.268 136.38
3.8 -1.349 96.508 4.499 -51.255 -30.792 -84.39 -4.26 132.8
4 -1.367 88.673 4.273 -60.27 -31.334 -89.74 -4.279 128.97
4.2 -1.291 80.496 4.131 -69.363 -31.513 -97.338 -4.206 124.8
4.4 -1.299 72.709 3.994 -78.577 -31.395 -103.45 -4.239 120.77
4.6 -1.318 65.357 3.845 -88.02 -31.303 -107.77 -4.261 116.11
4.8 -1.192 58.18 3.784 -97.07 -32.059 -114.7 -4.288 110.84
5 -1.182 51.453 3.838 -106.89 -31.656 -120.07 -4.515 105.45
5.2 -1.235 45.268 3.87 -116.75 -32.521 -123.03 -4.643 99.838
5.4 -1.247 39.194 4.068 -127.04 -32.507 -131.7 -4.746 94.391
5.6 -1.312 33.505 4.469 -137.12 -32.851 -133.64 -4.955 88.582
5.8 -1.572 27.224 5.407 -147.36 -32.677 -145.33 -5.109 84.622
6 -2.144 18.052 7.048 -163.92 -33.493 -158.52 -4.447 82.265
6.2 -3.929 0.706 9.007 173.85 -36.037 -172.13 -4.587 75.642
6.4 -16.53 -70.915 11.343 131.87 -47.443 -136.43 -4.953 73.309
6.6 -3.064 107.16 8.577 71.657 -34.576 -106.6 -4.3 78.064
6.8 -0.629 77.321 2.49 37.621 -33.05 -128.44 -3.285 76.841
7 -0.265 65.853 -3.052 18.739 -33.513 -143.12 -2.722 75.552
7.2 -0.219 59.846 -8.546 6.741 -34.784 -146.11 -2.165 75.642
7.4 -0.317 56.083 -14.725 4.867 -35.404 -151.89 -1.72 76.43
7.6 -1.162 54.327 -15.078 45.009 -33.594 -123.56 -1.219 78.725
7.8 -0.616 60.535 -16.014 -9.842 -31.155 -155.16 -0.837 79.245
8 -0.392 60.121 -22.085 -26.956 -31.923 -159.11 -0.663 81.487
8.2 -0.402 61.336 -27.313 -38.375 -32.698 -159.63 -0.497 83.83
8.4 -0.367 64.333 -32.49 -62.676 -31.776 -162.16 -0.396 86.319
8.6 -0.286 68.382 -35.569 -110.66 -31.509 -164.23 -0.278 88.199
8.8 -0.23 73.502 -32.658 -144.4 -30.737 -164.75 -0.249 89.022
9 -0.108 79.406 -31.547 -167.6 -29.564 -168.44 -0.325 88.608
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TG A2922-SG
Advance Product Information
April 27, 2005
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Packaged Dimensional Drawing TGA2922 - SG
Side
View
Top
View
Bias Proced ure
1. Ensure no RF power is applied to the device.
2. Pinch off device by setting Vg to –3V.
3. Increase Vd to 8.0V while monitoring drain current.
4. Increase Vg until drain current reaches 480 mA.
5. Apply RF power.
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TG A2922-SG
Advance Product Information
April 27, 2005
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
PCB is 20 mil thick Rogers 4003 substrate. The schematic is for small signal approach only
5.8 GHz Application Circuit Schematic
TG A2922-SG
Advance Product Information
April 27, 2005
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Typical Evaluation Board Layout *
*The la yout is a general purpose drawing that needs to be tuned f or the specif ic application.
PCB is RO 4003 20 mil thick ness, 0. 5 oz standard copper cladding, with Er = 3.38.
Contact TriQuint Applications Engineering for additional info
External Component Listing
Part Type Reference Description
Capacitor C1 AVX06035J3R9BBT,
3.9 pF
Capacitor C2 AVX06035J1R2BBT,
1.2 pF
Capacitor C3 1uF
Capacitor C4 AVX06035J3R9BBT,
3.9 pF
Capacitor C5 4.7 uF
Capacitor C6 AVX06035J1R2BBT,
1.2 pF
Resistor R1 0805, 10 Ω
C3
C2
C5
C6
C1 C4
VG VD
INPUT OUTPUT
TG A2922-SG
Advance Product Information
April 27, 2005
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Ordering Information
Part Package Style
TGA2922-SG S MT Gul l Wing (Formed Leads)
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile SnPb Pb Free
Ramp-up Rate 3 °C/sec 3 °C/sec
Activation Time and
Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C
Time abov e Melting Point 60 – 150 sec 60 – 150 sec
Max P eak Temperature 240 °C260
°C
Time within 5 °C of Peak
Temperature 10 – 20 sec 10 – 20 sec
Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec
TG A2922-SG