T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 1 of 6
2N3418S thru 2N3421S
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
Qualified Levels:
JAN, JANT X and
JANTXV
DESCRIPTION
This family of high-frequenc y, epitaxial planar t r ansistors feature low saturation vol tag e.
These devices are also available in TO-5 and low p r ofil e U 4 packages. M icros emi also of fers
num er ous other tr ans i stor products to meet high er and lower p ower rati ngs wit h var ious
switching speed requirements in both through-hole and surface-mou nt packages.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(leaded)
2N3418 – 2N3421
U4 package
(surface mount)
2N3418U4 – 2N3421U4
Important: For the latest informati on, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3418 thr ough 2N3421 serie s.
• JAN, JANTX, and JANTXV qualifications are available per M IL-PRF-19500/393.
• RoHS compliant versions available (commercial grade only).
• VCE(sat) = 0.25 V @ Ic = 1 A.
• Rise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA.
• Fall time tf = 0.20 µs max @ IC = 1.0 A, IB2 = -10 0 mA.
APPL ICAT IONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliability applications.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol
2N3418S
2N3420S
2N3419S
2N3421S
Unit
Collector-Emitter Voltage VCEO 60 80 V
Collector-Base Voltage VCBO 85 125 V
Emitter-Base Voltage VEBO 8 V
Collector Current
tp <= 1 ms, duty cycle <= 50% IC
3
5 A
Total P ower Dissipation
@ T A = +25 °C
@ T C = +100 °C (2) PD 1
5 W
Operating & Storage Junction Temperature Range
T
J
, T
stg
-65 to +200
°C
Notes: 1. Derate linearly 5.72 mW/°C for TA > +25 °C.
2. Derate linearly 150 mW/°C for TC > +100 °C.
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 2 of 6
2N3418S thru 2N3421S
M ECHANI CAL and PACK AGING
• CASE: Hermetically sealed, kovar base, nick el cap.
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: See Package Dimensions on last page.
PART NOME NCLAT URE
JAN 2N3418 S (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Short-Leaded package
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-b ase op en-ci r cuit outp ut capacitance.
ICEO
Collector c utoff current , base open .
ICEX
Collector c utoff current , circuit between base and emitt er .
IEBO
Emitter cutoff c ur rent, col lector op en.
hFE
Common-emit ter s tat i c for ward current transfer ratio.
TA
Ambient temperature, free-air temp er ature.
VCEO
Collector-emitter volt age, base op en.
VCBO
Collector-emitter volt age, em itter open.
VEBO
Emitter-base voltage, collector open.
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 3 of 6
2N3418S thru 2N3421S
ELECTRICAL CHARACTE RISTICS (TA = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Collector-Emit ter Breakdown C urrent
V(BR)CEO
V
I
C
= 50 mA, I
B
= 0
2N3418S, 2N3420S
2N3419S, 2N3421S
60
80
Collector-Emit ter Cut off Current
ICEX
0.3
0.3 µA
V
BE
= -0.5 V, V
CE
= 80 V
VBE = -0.5 V, VCE = 120 V
2N3418S, 2N3420S
2N3419S, 2N3421S
Collector-Base Cutoff Current
VCE = 45 V, IB = 0
VCE = 60 V, IB = 0
2N3418S, 2N3420S
2N3419S, 2N3421S
ICEO
5.0
5.0 µA
Emitter-Base C utoff Current
VEB = 6.0 V, IC = 0
VEB = 8.0 V, IC = 0
IEBO
0.5
10 µA
ON CHARACTERISTICS (1)
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Forward-Curren t Transfer Rati o
hFE
I
C
= 100 mA, V
CE
= 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
20
40
I
C
= 1.0 A, V
CE
= 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
20
40
60
120
I
C
= 2.0 A, V
CE
= 2.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
15
30
I
C
= 5.0 A, V
CE
= 5.0 V
2N3418S, 2N3419S
2N3420S, 2N3421S
10
15
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 1.0 A, I
B
= 0.1 A
IC = 2.0 A, IB = 0.2 A
0.25
0.5
Base-Emi tt er Satu r ation V oltage
IC = 1.0 A, IB = 0.1 A
IC = 2.0 A, IB = 0.2 A
VBE(sat)
0.6
0.7
1.2
1.4
V
DYNAMIC CHARACTERIST ICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magn itude of Common Emitter Small-Signal Short Circuit
Forward Cur r ent Transfer Ratio |hfe| 1.3 0.8
IC = 0.1 A, VCE = 10 V, f = 20 MHz
O utput Capac itance
Cobo
pF
VCB = 10 V, IE = 0, 100 k Hz ≤ f ≤ 1.0 MHz
150
NOTES: (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 4 of 6
2N3418S thru 2N3421S
ELECTRICAL CHARACTE RISTICS (TA = +2 5°C, unles s other wis e noted) con tinued
SWIT CHING CHARACTE RISTICS
Paramete r s / Test Conditions ( for all symbols) Symbol Min. Max. Unit
Delay Tim e
Rise Time
V
BE(off)
= -3.7 V,
IC = 1.0 A, IB1 = 100 mA
t
d
tr
0.08
0.22
µs
S torage Tim e
Fall Tim e VBE(off) = -3.7 V,
I
C
= 1.0 A, I
B2
= -100 mA ts
t
f
1.10
0.20 µs
Turn-Off Time
V
BE(off)
= -3.7 V, I
C
= 1.0 A,
IB2 = -100 mA, RL = 20 Ω
toff 1.20 µs
SAFE OPERATING AREA (See g r aph b el ow and r eference MIL-STD-750, me t hod 3053 )
DC Te st
TC = +100 °C, 1 cy cle, t > 1.0 s
Test 1
VCE = 5.0 V, IC = 3.0 A
Test 2
VCE = 37 V, IC = 0.4 A
Test 3
VCE = 60 V, IC = 0.18 5 A
VCE = 80 V, IC = 0.12 A
2N3418S, 2N3420S
2N3419S, 2N3421S
Clamped Switching TA = +25 ° C, IB = 0.5 A, IC = 3.0 A
COLLECTOR TO EMITTER VOLTAGE V CE (VOLTS)
Maximum Safe Operating Area (continuous dc)
COLLECTOR CURRENT I
C
(AMPERES)
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 5 of 6
2N3418S thru 2N3421S
GRAPHS
TC (oC) (Case)
FIGURE 1
Temperature-Power Der ating Curve
NOTES: Thermal Resistance Junction to Case = 4.5 oC/W
Ma x F ini sh -Alloy Temp = 175.0 oC
TIME (s)
FIGURE 2
Maximum Th er mal Imped anc e
NOTE: TC = +25 °C, Thermal Resistance RθJC = 4.5 °C/W
DC Operation Maximum Rating (W)
THETA (oC/W)
T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 6 of 6
2N3418S thru 2N3421S
PACKAGE DIM ENSIONS
1. Dimensions are in inches.
2. Millimeters ar e given for general in formation only.
3. Symbol TL is measured from HD maximum.
4. Details of ou tline in this zone are option al.
5. Symbol CD shall not vary more than .010 inch (0.25 mm) in zon e P. This zone is controlled for autom atic handling.
6. Leads at gauge plane .054 inch (1.37 mm ) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of TP relative to tab. Device may be measured by direct methods or by gauge.
7. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. Lead number 3 is electrically connected to case.
9. Beyon d r maximum, TW shall be held for a minimum length of .021 inch (0.53 mm).
10. Lead number 4 omitted on this variation.
11. Symbol r applied to both inside corners of tab.
12. For transistor types 2N3418S, 2N3419S, 2N3420S, 2N3421S, LL is .500 (12.70 mm) minimum and .750 (19.05 mm) maximum.
13. In accordance with ASME Y14.5M, diam eters are equivalent to Φx symbology.
14. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
LL
.500
.750
12.7
19.05
7
LU
See n otes 7, 13, 14
L1
.050
1.27
7
L2
.250
6.35
7
P
.100
2.54
5
Q
.040
1.02
4
TL
.029
.045
0.74
1.14
3, 10
TW
.028
.034
0.71
.86
9, 10
r
.010
0.25
11
α
45° TP
45° TP
6