APTC60AM45BC1G Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Solar converter 6 CR2 8 Q3 CR1 2 1 4 Q2 Q4 11 9 10 Features * CoolMOSTM - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged * SiC Schottky Diode (CR1) - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * By pass FRED diode (CR2) 12 Benefits * Very low stray inductance * High level of integration * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant May, 2011 Pins 7/8 ; 5/6 must be shorted together All ratings @ Tj = 25C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-9 APTC60AM45BC1G - Rev 0 7 VDSS = 600V RDSon = 45m max @ Tj = 25C ID = 49A @ Tc = 25C APTC60AM45BC1G 1. Phase leg (Q3 & Q4) Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Max ratings 600 49 38 130 20 45 250 15 3 1900 Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Unit V A V m W A mJ Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25C Tj = 125C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit A m V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf RthJC Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 8.5 Max Unit nF 150 VGS = 10V VBus = 300V ID = 49A nC 34 51 21 Inductive Switching (125C) VGS = 10V VBus = 400V ID = 49A RG = 5 30 ns 100 45 Junction to Case Thermal Resistance 0.5 C/W Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Tc = 25C Tc = 80C Typ 49 38 VGS = 0V, IS = - 49A IS = - 49A VR = 350V diS/dt = 100A/s Max Unit A 1.2 4 May, 2011 Test Conditions V V/ns Tj = 25C 600 ns Tj = 25C 17 C X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 49A di/dt 100A/s VR VDSS Tj 150C www.microsemi.com 2-9 APTC60AM45BC1G - Rev 0 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X APTC60AM45BC1G 2. Boost chopper (CR1 & Q2) Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Max ratings 600 49 38 130 20 45 250 15 3 1900 Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Unit V A V m W A mJ Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25C Tj = 125C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit A m V nA Dynamic Characteristics Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance VGS = 10V VBus = 300V ID = 49A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 49A RG = 5 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Min Typ 7.2 8.5 Max nF 150 nC 34 51 21 30 ns 100 45 405 J 520 660 J 635 0.5 www.microsemi.com Unit May, 2011 Qg Test Conditions VGS = 0V ; VDS = 25V f = 1MHz C/W 3-9 APTC60AM45BC1G - Rev 0 Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance APTC60AM45BC1G SiC schottky diode ratings and characteristics (CR1) Symbol Characteristic VRRM Test Conditions Min Tj = 25C Tj = 175C IRM Maximum Reverse Leakage Current VR=600V IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 100C IF = 10A Tj = 25C Tj = 175C VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC Typ Max 10 20 10 1.6 2 60 300 600 Maximum Peak Repetitive Reverse Voltage Unit V IF = 10A, VR = 300V di/dt =500A/s 14 f = 1MHz, VR = 200V 65 f = 1MHz, VR = 400V 50 Junction to Case Thermal Resistance A A 1.8 2.4 V nC pF 2.5 C/W Max Unit V 3. By pass FRED diode (CR2) Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VGE = 0V IF = 30A VR = 300V di/dt =1800A/s Err RthJC Reverse Recovery Energy Min 600 Typ Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C 100 350 30 1.6 1.5 100 150 1.5 Tj = 150C Tj = 25C 3.1 0.34 Tj = 150C 0.75 Junction to Case Thermal Resistance A A 2 V ns C mJ 2.45 C/W Max Unit V 4. Thermal & Package characteristics RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 4000 -40 -40 -40 2.5 Typ 150* 125 100 4.7 80 C N.m g May, 2011 Characteristic * Tjmax = 175C for by pass and SiC diode www.microsemi.com 4-9 APTC60AM45BC1G - Rev 0 Symbol VISOL TJ TSTG TC Torque Wt APTC60AM45BC1G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com 5. Typical CoolMOS Performance Curve (Phase leg) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 120 100 80 60 40 TJ=125C 20 TJ=25C 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.2 VGS=10V 1.15 1.1 VGS=20V 1.05 1 0.95 0.9 ID, DC Drain Current (A) Normalized to VGS=10V @ 50A 7 DC Drain Current vs Case Temperature 50 RDS(on) vs Drain Current 1.3 1.25 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) May, 2011 0 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 40 30 20 10 0 0 20 40 60 80 100 120 140 25 ID, Drain Current (A) www.microsemi.com 50 75 100 125 TC, Case Temperature (C) 150 5-9 APTC60AM45BC1G - Rev 0 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (C) 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 s 0.6 1 ms Single pulse TJ=150C TC=25C 10 10 ms 1 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 100 10 0 12 1000 VDS=120V ID=50A TJ=25C 10 VDS=300V 8 VDS=480V 6 4 2 0 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 20 Delay Times vs Current 140 100 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (C) 40 60 80 100 120 140 160 Gate Charge (nC) Rise and Fall times vs Current 70 120 tr and tf (ns) 100 VDS=400V RG=5 TJ=125C L=100H 80 60 40 VDS=400V RG=5 TJ=125C L=100H 60 td(off) td(on) 20 50 tf 40 30 tr May, 2011 VGS(TH), Threshold Voltage (Normalized) 1000 25 C, Capacitance (pF) 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 td(on) and td(off) (ns) VGS=10V ID= 50A 2.5 20 10 0 0 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) www.microsemi.com 6-9 APTC60AM45BC1G - Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60AM45BC1G APTC60AM45BC1G 6. Typical CoolMOS Performance Curve (Boost chopper) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0,6 0,5 D = 0.9 0,4 0,7 0,3 0,5 0,3 0,2 0,1 0,1 Single Pulse 0,05 0 0,00001 0,0001 0,001 0,01 0,1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 100 80 60 40 TJ=125C 20 0 TJ=25C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 50A 1,2 VGS=10V ID, DC Drain Current (A) 1,25 1,15 1,1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) VGS=20V 1,05 1 0,95 40 30 20 10 0,9 0 20 40 60 80 100 120 140 25 50 75 100 125 TC, Case Temperature (C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1,2 1,1 1,0 0,9 0,8 25 50 75 100 125 150 RDS(on), Drain to Source ON resistance (Normalized) ID, Drain Current (A) 150 ON resistance vs Temperature 3,0 VGS=10V ID= 50A 2,5 2,0 1,5 1,0 0,5 0,0 25 TJ, Junction Temperature (C) 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1,1 1000 ID, Drain Current (A) 1,0 0,9 0,8 0,7 limited by RDSon 100 100 s 0,6 1 ms Single pulse TJ=150C TC=25C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (C) May, 2011 0 VGS(TH), Threshold Voltage (Normalized) 7 DC Drain Current vs Case Temperature 50 RDS(on) vs Drain Current 1,3 C, Capacitance (pF) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 120 12 ID=50A TJ=25C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 www.microsemi.com 20 40 60 80 100 120 140 160 Gate Charge (nC) 7-9 APTC60AM45BC1G - Rev 0 ID, Drain Current (A) 320 APTC60AM45BC1G Delay Times vs Current 140 Rise and Fall times vs Current 70 60 td(off) 100 VDS=400V RG=5 TJ=125C L=100H 80 60 50 tr and tf (ns) td(on) and td(off) (ns) 120 40 VDS=400V RG=5 TJ=125C L=100H 30 tr 20 td(on) 20 10 0 0 10 20 30 40 50 0 60 70 80 0 10 20 ID, Drain Current (A) 1,2 40 50 60 70 80 Switching Energy vs Gate Resistance 2 Eoff Switching Energy (mJ) Switching Energy (mJ) VDS=400V RG=5 TJ=125C L=100H 30 ID, Drain Current (A) Switching Energy vs Current 1,6 Eon 0,8 0,4 VDS=400V ID=50A TJ=125C L=100H 1,5 Eoff 1 Eon 0,5 0 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 IDR, Reverse Drain Current (A) VDS=400V D=50% RG=5 TJ=125C TC=75C ZVS 200 150 ZCS 100 hard switching 50 0 5 20 30 40 50 Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 250 10 Gate Resistance (Ohms) 300 Frequency (kHz) tf 40 TJ=150C 100 TJ=25C 10 1 0,3 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) 0,5 0,7 0,9 1,1 1,3 1,5 VSD, Source to Drain Voltage (V) 7. SiC Typical Performance Curve (CR1) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 3 2.5 0.9 2 0.7 1.5 0.5 0.3 1 0.1 0.5 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 200 15 TJ=75C TJ=175C 10 TJ=125C 5 0 0 0.5 1 1.5 2 2.5 3 3.5 TJ=175C 160 TJ=125C 120 TJ=75C 80 TJ=25C 40 0 200 VF Forward Voltage (V) 300 400 500 600 700 VR Reverse Voltage (V) 800 May, 2011 TJ=25C IR Reverse Current (A) Capacitance vs.Reverse Voltage 400 C, Capacitance (pF) 350 300 250 200 150 100 50 0 1 10 100 VR Reverse Voltage 1000 www.microsemi.com 8-9 APTC60AM45BC1G - Rev 0 IF Forward Current (A) Reverse Characteristics Forward Characteristics 20 APTC60AM45BC1G 8. Typical By pass Performance Curve (CR2) Forward Characteristic of diode Energy losses vs Collector Current 60 1 VCE = 300V VGE = -15V TJ = 150C 50 0,75 Err (mJ) IF (A) 40 30 20 TJ=150C 0,5 0,25 10 TJ=25C 0 0 0 0,4 0,8 1,2 1,6 VF (V) 2 0 2,4 10 20 30 40 50 60 IF (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 2,5 2 0,9 0,7 1,5 0,5 1 0,3 0,5 0,1 Single Pulse 0,05 0 0,00001 0,0001 0,001 0,01 0,1 1 10 "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 9-9 APTC60AM45BC1G - Rev 0 May, 2011 Rectangular Pulse Duration in Seconds