AFT27S010NT1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 1.26 W RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 728 to 3600 MHz.
Typical Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQ =90mA,P
out = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
2100 MHz
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz 21.6 23.2 9.1 --42.0 -- 11
2140 MHz 21.8 23.0 9.0 --41.5 -- 1 5
2170 MHz 21.7 22.6 8.7 --41.7 -- 1 5
2300 MHz
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz 21.2 23.6 9.0 --40.9 -- 1 0
2350 MHz 21.6 22.6 8.6 --40.0 -- 2 2
2400 MHz 20.7 21.0 8.3 --40.1 -- 9
2600 MHz
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2500 MHz 19.6 22.0 9.8 --44.8 -- 7
2600 MHz 21.0 22.7 9.4 --41.4 -- 1 5
2700 MHz 19.6 21.2 8.9 --39.7 -- 5
Typical Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQ =80mA,P
out = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
700 MHz
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz 24.3 25.5 9.3 --44.0 -- 1 2
748 MHz 24.3 24.7 9.4 --43.9 -- 1 2
768 MHz 24.3 23.8 9.5 --43.6 -- 1 2
3500 MHz
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
3400 MHz 14.7 15.8 9.0 --44.9 -- 7
3500 MHz 16.0 16.8 9.0 --44.9 -- 8
3600 MHz 15.0 17.4 8.6 --44.2 -- 4
1. All data measured in fixture with device soldered to heatsink.
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Universal Broadband Driven Device with Internal RF Feedback
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel.
Document Number: AFT27S010N
Rev. 2, 11/2014
Freescale Semiconductor
Technical Data
728–3600 MHz, 1.26 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
AFT27S010NT1
PLD--1.5W
PLASTIC
Figure 1. Pin Connections
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
(Top View)
RFout/VDS
RFin/VGS
Freescale Semiconductor, Inc., 2013–2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +150 C
Operating Junction Temperature Range (1,2) TJ--40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 77C, 1.3 W CW, 28 Vdc, IDQ = 90 mA, 2140 MHz
RJC 3.5 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1B
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) III
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 12.1 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 90 mAdc, Measured in Functional Test)
VGS(Q) 1.5 1.8 2.3 Vdc
Drain--Source On--Voltage
(VGS =6Vdc,I
D= 121 Adc)
VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
AFT27S010NT1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ =90mA,P
out = 1.26 W Avg., f = 2170 MHz, Single--Carrier
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5MHzOffset.
Power Gain Gps 20.0 21.7 —dB
Drain Efficiency D18.5 21.5 — %
Adjacent Channel Power Ratio ACPR —--40.6 --37.9 dBc
Input Return Loss IRL — -- 1 4 -- 9 dB
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 90 mA, f = 2140 MHz
VSWR 5:1 at 32 Vdc, 13.9 W CW Output Power
(3 dB Input Overdrive from 10 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 90 mA, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —10 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz frequency range.)
—--12.6 —
VBW Resonance Point
(IMD Seventh Order Intermodulation Inflection Point)
VBWres —120 —MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =1.26WAvg. GF—0.20 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.011 —dB/C
Output Power Variation over Temperature
(--30Cto+85C)
P1dB —0.004 —dB/C
4
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
Figure 2. AFT27S010NT1 Test Circuit Component Layout — 2110--2170 MHz
C7
C6
R1
C2
C1*
C13
C12
C4 C5*
C3
C8
C9
C10
C11
AFT27S010N
Rev. 2
2100MHz
*C1 and C5 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink.
Q1
D53402
VDD
VGG
VDD
Table 6. AFT27S010NT1 Test Circuit Component Designations and Values — 2110--2170 MHz
Part Description Part Number Manufacturer
C1, C5, C6, C8, C9 9.1 pF Chip Capacitors ATC100B9R1JT500XT ATC
C2 1.1 pF Chip Capacitor ATC100B1R1JT500XT ATC
C3 2.0 pF Chip Capacitor ATC100B2R0JT500XT ATC
C4 1.0 pF Chip Capacitor ATC100B1R0JT500XT ATC
C7, C10, C11, C12, C13 10 F Chip Capacitors GRM32ER61H106KA12L Murata
Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale
R1 2.37 Chip Resistor CRCW12062R37FKEA Vishay
PCB Rogers RO4350B, 0.020,r=3.66 D53402 MTL
AFT27S010NT1
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS —2110--2170 MHz
IRL, INPUT RETURN LOSS (dB)
2060
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout =1.26WAvg.
-- 2 2
-- 6
-- 1 0
-- 1 4
-- 1 8
16
25
24
-- 4 5
24
23
22
21
-- 4 0
-- 4 1
-- 4 2
-- 4 3
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
23
22
21
20
19
18
17
2080 2100 2120 2140 2160 2180 2200 2220
20
-- 4 4
-- 2 6
ACPR (dBc)
PARC
VDD =28Vdc,P
out = 1.26 W (Avg.)
IDQ = 90 mA, Single--Carrier W--CDMA
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 2 0
-- 3 0
-- 4 0
-- 6 0
1 200
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
IM5--U
IM5--L
Figure 5. Output Peak--to--Average Ratio Compression
(PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
1
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
0.5 1.5 2.5
5
35
30
25
20
15
10
DDRAIN EFFICIENCY (%)
--3 dB = 2.55 W
2
D
ACPR
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 2 5
-- 3 0
-- 4 0
-- 3 5
-- 4 5
23
Gps, POWER GAIN (dB)
22.5
22
21.5
21
20.5
20
--1dB=1.4W
--2dB=1.9W
IRL
PARC (dB)
-- 1 . 2
-- 0 . 4
-- 0 . 6
-- 0 . 8
-- 1
-- 1 . 4
-- 5
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1
VDD =28Vdc,I
DQ = 90 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
VDD =28Vdc,P
out = 7.6 W (PEP), IDQ =90mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 2140 MHz
IM3--U
IM3--L
IM7--U
100
Gps
3
IM7--L
15
Gps
6
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
TYPICAL CHARACTERISTICS —2110--2170 MHz
0.1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 3 0
-- 3 5
18
24
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
23
22
110
10
-- 5 5
ACPR (dBc)
21
20
19
-- 2 5
-- 4 0
-- 4 5
-- 5 0
Figure 7. Broadband Frequency Response
12
24
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ =90mA
20
18
16
GAIN (dB)
22
14
1950 1990 2030 2070 2110 2150 2190 2230 2270
-- 2 5
35
25
15
5
-- 5
IRL (dB)
-- 1 5
Gain
IRL
2110 MHz
2170 MHz
2140 MHz
VDD =28Vdc,I
DQ = 90 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF Gps
2170 MHz
2110 MHz
2140 MHz
D
2170 MHz
2140 MHz
2110 MHz
AFT27S010NT1
7
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQ =87mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 1.23 -- j0.107 0.698 + j0.572 5.85 + j3.49 21.0 41.2 13 60.2 -- 1 2
2140 1.08 -- j0.422 0.877 + j0.537 5.79 + j3.28 20.8 41.2 13 59.5 -- 1 3
2170 1.12 -- j0.0337 1.26 + j0.455 5.57 + j3.12 20.7 41.1 13 60.1 -- 1 1
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 1.23 -- j0.107 0.592 + j0.741 6.75 + j2.96 18.7 42.0 16 59.6 -- 1 8
2140 1.08 -- j0.422 0.807 + j0.78 6.62 + j2.72 18.5 42.0 16 58.6 -- 2 0
2170 1.12 -- j0.0337 1.25 + j0.806 6.47 + j2.61 18.4 42.0 16 59.8 -- 1 7
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQ =87mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 1.23 -- j0.107 0.609 + j0.446 3.56 + j6.04 22.7 39.7 967.5 -- 2 0
2140 1.08 -- j0.422 0.736 + j0.434 3.63 + j5.62 22.4 39.9 10 66.6 -- 2 1
2170 1.12 -- j0.0337 1.03 + j0.312 3.37 + j5.39 22.5 39.6 967.3 -- 1 9
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 1.23 -- j0.107 0.512 + j0.627 3.80 + j5.81 20.5 40.5 11 67.3 -- 2 9
2140 1.08 -- j0.422 0.671 + j0.667 3.77 + j5.41 20.3 40.6 11 65.9 -- 3 1
2170 1.12 -- j0.0337 1.05 + j0.666 3.83 + j5.15 20.2 40.6 12 67.1 -- 2 7
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
0
8
6
IMAGINARY ()
45
210
7
5
4
9
3
3
2
1
78
6
0
8
6
IMAGINARY ()
45
210
7
5
4
9
3
3
2
1
78
6
0
8
6
IMAGINARY ()
45
210
7
5
4
9
3
3
2
1
78
6
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 8. P1dB Load Pull Output Power Contours (dBm)
REAL ()
0
8
6
IMAGINARY ()
45
210
7
5
4
9
3
3
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
2
1
78
6
P
E
39
38
40
38.5
38
37.5 39.5
40.5
41
39
39.5
60
58
56
54 52
50
62
P
E
64
66
52
P
E
21.5
20
20.5
21
20.5
22
22.5
23.5
23
P
E
-- 2 6
-- 2 4
-- 2 2
-- 2 0
-- 1 8
-- 1 6
-- 1 4
-- 1 2
-- 2 8
19.5
AFT27S010NT1
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
0
8
6
IMAGINARY ()
45
210
7
5
4
9
3
3
2
1
78
6
0
8
6
IMAGINARY ()
45
210
7
5
4
9
3
3
2
1
78
6
0
8
6
IMAGINARY ()
45
210
7
5
4
9
3
3
2
1
78
6
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 12. P3dB Load Pull Output Power Contours (dBm)
REAL ()
0
8
6
IMAGINARY ()
45
210
7
5
4
9
3
3
Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
2
1
78
6
39.5
P
E
38
38.5
39 40
40.5 41
41.5
P
E60
58
56
54
50
62
64
52
P
E
19.5
20
19
18.5
18
17.5
20.5
21
21.5
P
E
-- 2 6
-- 2 4 -- 2 2
-- 2 0
-- 2 8
-- 3 0
-- 3 2
-- 3 4
54
10
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
2500--2700 MHz
Figure 16. AFT27S010NT1 Test Circuit Component Layout — 2500--2700 MHz
NOTE: All data measured in fixture with device soldered to heatsink.
AFT27S010N
Rev. 2
2300MHz/2500MHz
D53817
VDD
VGG
VDD
C6
C5
R1
C2
C1
C12
C11
C4
C3
C7
C8
C9
C10
Q1
C13
Table 9. AFT27S010NT1 Test Circuit Component Designations and Values — 2500--2700 MHz
Part Description Part Number Manufacturer
C1, C4, C5, C7, C8 6.8 pF Chip CapacitorsATC100B6R8JT500XT ATC
C2 1.2 pF Chip Capacitor ATC100B1R2JT500XT ATC
C3 1 pF Chip Capacitor ATC100B1R0JT500XT ATC
C6, C9, C10, C11, C12 10 F Chip Capacitors GRM32ER61H106KA12L Murata
C13 220 F, 50 V Electrolytic Capacitor 227CKS050M Illinois Capacitor
Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale
R1 4.75 Chip Resistor CRCW12064R75FKEA Vishay
PCB Rogers RO4350B, 0.020,r=3.66 D53817 MTL
AFT27S010NT1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS —2500--2700 MHz
-- 4 4
-- 4 2
-- 4 0
-- 3 8
-- 3 6
19
Pout, OUTPUT POWER (WATTS) AVG.
-- 2 0
-- 3 0
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
-- 7 0
ACPR (dBc)
-- 1 0
-- 4 0
-- 5 0
-- 6 0
0
30
f, FREQUENCY (MHz)
20
15
10
GAIN (dB)
25
5
2300 2400 2500 2600 2700 2800 2900
IRL (dB)
IRL, INPUT RETURN LOSS (dB)
2480
ACPR
f, FREQUENCY (MHz)
Figure 17. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout =1.26WAvg.
-- 2 0
0
-- 5
-- 1 0
-- 1 5
18.5
23.5
23
22.5
-- 4 6
24
23
22
21
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
22
21.5
21
20.5
20
19.5
2510 2540 2570 2600 2630 2660 2690 2720
20
-- 2 5
ACPR (dBc)
PARC
IRL
PARC (dB)
-- 2
0
-- 0 . 5
-- 1
-- 1 . 5
-- 2 . 5
Gps
Figure 18. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
Figure 19. Broadband Frequency Response
0.3
12
24
5
65
55
35
25
22
10
18
16
2500 MHz
Gain
IRL
VDD =28Vdc
Pin =0dBm
IDQ =90mA
1
Gps
D
2600 MHz
20
2600 MHz
2500 MHz
2600 MHz
10
5
0
-- 5
-- 1 0
-- 1 5
-- 2 0
20
14
45
15
2700 MHz
2500 MHz
2700 MHz
2700 MHz
VDD =28Vdc,I
DQ = 90 mA, Single--Carrier, W--CDMA
3.84 MHz Channel Bandwidth, Input Signal = 9.9 dB @
0.01% Probability on CCDF
ACPR
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
VDD =28Vdc,P
out = 1.26 W (Avg.)
IDQ = 90 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
12
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
2300--2400 MHz
Figure 20. AFT27S010NT1 Test Circuit Component Layout — 2300--2400 MHz
NOTE: All data measured in fixture with device soldered to heatsink.
AFT27S010N
Rev. 2
2300MHz/2500MHz
D53817
VDD
VGG
VDD
C6
C5
R1
C2
C1
C12
C11
C4
C3
C7
C8
C9
C10
Q1 C14
C13
Table 10. AFT27S010NT1 Test Circuit Component Designations and Values — 2300--2400 MHz
Part Description Part Number Manufacturer
C1, C4, C5, C7, C8 6.8 pF Chip Capacitors ATC100B6R8JT500XT ATC
C2, C14 1 pF Chip Capacitors ATC100B1R0JT500XT ATC
C3 1.2 pF Chip Capacitor ATC100B1R2JT500XT ATC
C6, C9, C10, C11, C12 10 F Chip Capacitors GRM32ER61H106KA12L Murata
C13 220 F, 50 V Electrolytic Capacitor 227CKS050M Illinois Capacitor
Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale
R1 4.75 , Chip Resistor CRCW12064R75FKEA Vishay
PCB Rogers RO4350B, 0.020,r=3.66 D53817 MTL
AFT27S010NT1
13
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS —2300--2400 MHz
Pout, OUTPUT POWER (WATTS) AVG.
0
-- 1 0
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
-- 5 0
ACPR (dBc)
10
-- 2 0
-- 3 0
-- 4 0
0
30
f, FREQUENCY (MHz)
20
15
10
GAIN (dB)
25
5
2050 2150 2250 2350 2450 2550 2650
-- 2 5
5
0
-- 5
-- 1 0
-- 1 5
IRL (dB)
-- 2 0
IRL, INPUT RETURN LOSS (dB)
2290
f, FREQUENCY (MHz)
Figure 21. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout =1.26WAvg.
-- 2 0
0
-- 5
-- 1 0
-- 1 5
20
22
21.8
21.6
-- 4 4
24
23
22
21
-- 3 9
-- 4 0
-- 4 1
-- 4 2
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
21.4
21.2
21
20.8
20.6
20.4
20.2
2305 2320 2335 2350 2365 2380 2395 2410
20
-- 4 3
-- 2 5
ACPR (dBc)
PARC
IRL
PARC (dB)
-- 2
0
-- 0 . 5
-- 1
-- 1 . 5
-- 2 . 5
Gps
Figure 22. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
Figure 23. Broadband Frequency Response
0.3
14
26
0
60
50
40
22
20
10
30
18
Gain
IRL
VDD =28Vdc
Pin =0dBm
IDQ =90mA
1
VDD =28Vdc
Pout = 1.26 W (Avg.)
IDQ =90mA
20
VDD =28Vdc,I
DQ = 90 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal = 9.9 dB @ 0.01%
Probability on CCDF
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF ACPR
24
16
20
10
2300 MHz
2350 MHz
2400 MHz 2400 MHz
2300 MHz
2350 MHz
2400 MHz
2350 MHz
2300 MHz
Gps
DACPR
14
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
Table 11. Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQ =87mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 1.12 -- j1.10 0.995 + j1.38 5.39 + j2.23 20.1 40.9 12 55.9 -- 1 2
2400 1.06 -- j1.59 0.948 + j1.96 5.09 + j1.86 19.8 40.9 12 55.1 -- 1 2
2500 1.00 -- j1.60 1.29 + j1.95 4.51 + j1.56 19.2 40.8 12 55.8 -- 1 0
2600 0.985 -- j3.50 0.743 + j3.66 4.81 + j1.10 19.0 41.3 13 56.2 -- 1 4
2690 1.10 -- j3.13 1.48 + j2.98 4.14 + j0.987 19.0 41.0 13 57.5 -- 1 2
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 1.12 -- j1.10 0.919 + j1.64 6.28 + j1.74 17.8 41.7 15 55.0 -- 1 9
2400 1.06 -- j1.59 0.861 + j2.23 5.86 + j1.41 17.5 41.7 15 54.4 -- 1 9
2500 1.00 -- j1.60 1.37 + j2.32 5.40 + j1.17 16.9 41.7 15 55.8 -- 1 7
2600 0.985 -- j3.50 0.579 + j3.82 5.37 + j0.912 16.9 42.0 16 55.8 -- 2 2
2690 1.10 -- j3.13 1.74 + j3.43 5.04 + j0.759 16.8 41.8 15 57.1 -- 1 8
(1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 12. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQ =87mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 1.12 -- j1.10 0.855 + j1.22 3.36 + j4.23 21.6 39.8 961.9 -- 2 0
2400 1.06 -- j1.59 0.829 + j1.80 3.34 + j3.53 21.2 39.9 10 60.4 -- 1 9
2500 1.00 -- j1.60 1.04 + j1.82 3.21 + j3.00 20.8 40.0 10 61.1 -- 1 6
2600 0.985 -- j3.50 0.709 + j3.49 3.17 + j2.53 20.0 40.5 11 60.7 -- 2 0
2690 1.10 -- j3.13 1.14 + j2.91 2.87 + j2.16 20.4 40.2 10 62.0 -- 1 8
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 1.12 j1.10 0.803 + j1.51 3.96 + j4.10 19.4 40.7 12 61.1 -- 2 7
2400 1.06 -- j1.59 0.757 + j2.07 3.70 + j3.45 19.1 40.6 12 59.8 -- 2 7
2500 1.00 -- j1.60 1.15 + j2.18 3.58 + j2.94 18.7 40.8 12 61.2 -- 2 4
2600 0.985 -- j3.50 0.556 + j3.73 4.15 + j2.29 17.8 41.5 14 59.7 -- 2 6
2690 1.10 -- j3.13 1.43 + j3.33 3.40 + j2.01 18.2 41.1 13 61.7 -- 2 5
(1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
AFT27S010NT1
15
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
-- 1
6
4
45628
5
3
2
7
1
3
0
-- 1
6
4
45628
5
3
2
7
1
3
0
-- 1
6
4
45628
5
3
2
7
1
3
0
IMAGINARY ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 24. P1dB Load Pull Output Power Contours (dBm)
REAL ()
-- 1
6
4
IMAGINARY ()
45628
5
3
2
7
1
3
Figure 25. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 26. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 27. P1dB Load Pull AM/PM Contours ()
REAL ()
0
IMAGINARY ()
IMAGINARY ()
P
E
37
37.5
38 38.5 39
39.5 40
40.5
39 39.5 40
P
E
60 58 56
54
52
50 48
46
46 46
19.5
20
19
18.5
18
P
E
20.5
21
21.5
22
P
E
-- 1 6
-- 1 2
-- 1 0
-- 1 8
-- 2 0
-- 2 2
-- 2 4
-- 1 4
16
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
P3dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
-- 1
6
4
45628
5
3
2
7
1
3
0
-- 1
6
4
45628
5
3
2
7
1
3
0
-- 1
6
4
45628
5
3
2
7
1
3
0
IMAGINARY ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 28. P3dB Load Pull Output Power Contours (dBm)
REAL ()
-- 1
6
4
IMAGINARY ()
45628
5
3
2
7
1
3
Figure 29. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 30. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 31. P3dB Load Pull AM/PM Contours ()
REAL ()
0
IMAGINARY ()
IMAGINARY ()
P
E
37.5
40 41
38
38.5
39
39.5 40 40.5
41
41.5
P
E
48
54 52
50
48
46 50
46
48
50
56
58
60
P
E
19.5
20
19 18.5
17.5
17
16.5
16
18
P
E
-- 2 6
-- 2 4
-- 2 2
-- 2 0 -- 1 8
-- 1 6
-- 1 4
-- 2 8
-- 3 0
AFT27S010NT1
17
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS —3400--3600 MHz
-- 1 . 4
-- 0 . 6
-- 0 . 8
-- 1
-- 1 . 2
-- 1 . 6
IRL, INPUT RETURN LOSS (dB)
-- 8
0
-- 2
-- 4
-- 6
-- 1 0
PARC (dB)
3380
f, FREQUENCY (MHz)
Figure 32. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout =1.26WAvg.
13
18
17.5
17
-- 4 6
19
18
17
16
--43.5
-- 4 4
--44.5
-- 4 5
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
16.5
16
15.5
15
14.5
14
13.5
3410 3440 3470 3500 3530 3560 3590 3620
15
--45.5
ACPR (dBc)
ACPR
D
PARC
Gps
IRL
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 33. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 2 0
-- 3 0
11
17
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
16
15
110
10
-- 7 0
ACPR (dBc)
14
13
12
-- 1 0
-- 4 0
-- 5 0
-- 6 0
3500 MHz
3400 MHz
3600 MHz
ACPR
3600 MHz
3500 MHz 3400 MHz
3400 MHz
3500 MHz
3600 MHz
D
Figure 34. Broadband Frequency Response
6
18
f, FREQUENCY (MHz)
14
12
10
GAIN (dB)
16
8
3100 3200 3300 3400 3500 3600 3700 3800 3900
Gain
VDD =28Vdc
Pin =0dBm
IDQ =80mA
-- 1 0
2
0
-- 2
-- 4
-- 6
IRL (dB)
-- 8
IRL
Gps
VDD =28Vdc,I
DQ = 80 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
VDD =28Vdc,P
out = 1.26 W (Avg.)
IDQ = 80 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
18
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
728--768 MHz
Figure 35. AFT27S010NT1 Test Circuit Component Layout — 728--768 MHz
C15
C14
C11
C10
C5C6
C3
C17
C16
C13
C12
C8
C9*
C1* R1
C4
C7*
C2
AFT27S010N
Rev. 1
728MHz
Q1
D53406
*C1, C7 and C9 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink.
VDD
VDD
VGG
Table 13. AFT27S010NT1 Test Circuit Component Designations and Values — 728--768 MHz
Part Description Part Number Manufacturer
C1, C9 82 pF Chip Capacitors ATC100B820JT500XT ATC
C2 3.9 pF Chip Capacitor ATC100B3R9JT500XT ATC
C3 1.7 pF Chip Capacitor ATC100B1R7JT500XT ATC
C4 2.7 pF Chip Capacitor ATC100B2R7JT500XT ATC
C5, C10, C11, C12, C13 33 pF Chip Capacitors ATC100B330JT500XT ATC
C6, C14, C15, C16, C17 10 F Chip Capacitors GRM32ER61H106KA12L Murata
C7 3.9 pF Chip Capacitor ATC100B3R9JT500XT ATC
C8 0.5 pF Chip Capacitor ATC100B0R5JT500XT ATC
Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale
R1 10 Chip Resistor CWCR120610R0JNEA Vishay
PCB Rogers RO4350B, 0.020,r=3.66 D53406 MTL
AFT27S010NT1
19
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS —728--768 MHz
16
Pout, OUTPUT POWER (WATTS) AVG.
-- 1 0
-- 2 0
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
-- 6 0
ACPR (dBc)
-- 3 0
-- 4 0
-- 5 0
28
f, FREQUENCY (MHz)
24
22
20
GAIN (dB)
26
18
550 600 650 750 800 950
-- 1 2
0
-- 2
-- 4
-- 6
-- 8
IRL (dB)
-- 1 0
IRL, INPUT RETURN LOSS (dB)
710
f, FREQUENCY (MHz)
Figure 36. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout =1.26WAvg.
-- 1 5
-- 11
-- 1 2
-- 1 3
-- 1 4
23.7
24.7
24.6
-- 4 5
26
25
24
-- 4 0
-- 4 1
-- 4 2
-- 4 3
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
24.4
24.2
24.1
24
23.9
720 730 740 750 760 770 780 790
23
-- 4 4
-- 1 6
ACPR (dBc)
PARC (dB)
-- 0 . 8
0
-- 0 . 2
-- 0 . 4
-- 0 . 6
-- 1
Figure 37. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
Figure 38. Broadband Frequency Response
0.3
ACPR
16
28
0
60
50
40
30
20
D
24
10
10
22
20
768 MHz
700 850 900
ACPR
D
PARC
VDD =28Vdc,P
out = 1.26 W (Avg.)
IDQ = 80 mA, Single--Carrier W--CDMA
IRL
Gps
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
728 MHz
748 MHz
748 MHz
1
VDD =28Vdc
Pin =0dBm
IDQ =80mA
Gain
IRL
Gps
VDD =28Vdc,I
DQ = 80 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
24.5
24.3
23.8
27
20
-- 7 0
728 MHz
26
18
768 MHz
728 MHz
748 MHz
768 MHz
20
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
Table 14. Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQ =81mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
728 2.05 + j12.1 1.72 -- j11.7 15.1 + j6.07 27.2 41.3 14 59.8 -- 1 5
748 2.04 + j11.1 1.69 -- j11.2 14.6 + j5.90 27.0 41.5 14 60.2 -- 1 5
768 1.94 + j10.5 1.69 -- j10.8 14.6 + j5.49 26.7 41.5 14 60.1 -- 1 4
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
728 2.05 + j12.1 1.53 -- j11.7 16.1 + j4.43 24.7 42.3 17 61.9 -- 1 7
748 2.04 + j11.1 1.50 -- j11.3 15.1 + j4.52 24.6 42.4 17 61.7 -- 1 7
768 1.94 + j10.5 1.46 -- j10.9 14.8 + j4.54 24.5 42.4 17 61.7 -- 1 6
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 15. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQ =81mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
728 2.05 + j12.1 1.97 -- j10.7 18.5 + j16.4 27.9 39.7 968.4 -- 1 3
748 2.04 + j11.1 1.81 -- j9.83 16.7 + j20.1 28.6 38.9 868.5 -- 1 4
768 1.94 + j10.5 1.83 -- j9.69 17.4 + j18.0 28.3 39.5 969.2 -- 1 4
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
728 2.05 + j12.1 1.69 -- j10.8 18.3 + j18.6 26.1 40.3 11 73.7 -- 1 4
748 2.04 + j11.1 1.58 -- j10.4 17.5 + j17.5 26.4 40.5 11 77.4 -- 1 4
768 1.94 + j10.5 1.51 -- j9.87 15.8 + j19.1 26.8 40.0 10 72.8 -- 1 5
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
AFT27S010NT1
21
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz
-- 5
25
15
14 16 1810 24
20
10
5
20
0
12 22
IMAGINARY ()
-- 5
25
15
14 16 1810 24
20
10
5
20
0
12 22
-- 5
25
15
14 16 1810 24
20
10
5
20
0
12 22
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 39. P1dB Load Pull Output Power Contours (dBm)
REAL ()
-- 5
25
15
IMAGINARY ()
14 16 1810 24
20
10
5
20
0
12
Figure 40. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 41. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 42. P1dB Load Pull AM/PM Contours ()
REAL ()
22
IMAGINARY ()
IMAGINARY ()
39
P
E
38.5
41
40.5
40
37.5 38
39.5
40
40.5
P
E
58
56
54
52
60
62
64
66
68
66
P
E
27
26.5
27.5
28
28.5
29
29.5
30
30.5
P
E
-- 2 2
-- 2 0 -- 1 8
-- 1 6
-- 1 4
-- 1 2
-- 1 0
22
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
P3dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz
-- 5
25
15
14 16 1810 24
20
10
5
20
0
12 22
IMAGINARY ()
-- 5
25
15
14 16 1810 24
20
10
5
20
0
12 22
-- 5
25
15
14 16 1810 24
20
10
5
20
0
12 22
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 43. P3dB Load Pull Output Power Contours (dBm)
REAL ()
-- 5
25
15
IMAGINARY ()
14 16 1810 24
20
10
5
20
0
12
Figure 44. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 45. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 46. P3dB Load Pull AM/PM Contours ()
REAL ()
22
IMAGINARY ()
IMAGINARY ()
P
E
41.5
41
42
38.5 39 39.5 40
40.5
41
41.5
P
E
60 62
64
66
68
70
72
74 76
68
P
E
24.5
24
25
25.5
26
26.5
27
27.5
28
P
E
-- 8
-- 1 0
-- 1 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
-- 2 4
AFT27S010NT1
23
RF Device Data
Freescale Semiconductor, Inc.
Figure 47. PCB Pad Layout for PLD--1.5W
7.11
0.28
4.91
0.165
3.94
0.155
2.26
0.089
2.16
0.085
Solder pad with thermal via
structure. All dimensions in mm.
Figure 48. Product Marking
AFS10
N( )B
YYWW
24
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
PACKAGE DIMENSIONS
AFT27S010NT1
25
RF Device Data
Freescale Semiconductor, Inc.
26
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
AFT27S010NT1
27
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Nov. 2013 Initial Release of Data Sheet
1Sept. 2014 Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect
actual reel size, p. 1
Changed operating frequency from 728–2700 MHz to 728–3600 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
2Nov. 2014 Added 3400--3600 MHz performance information as follows:
-- Typical Frequency Band table, p. 1
-- Fig. 32, Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance
@P
out =1.26WAvg.,p.17
-- Fig. 33, Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power, p. 17
-- Fig. 34, Broadband Frequency Response, p. 17
28
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All
other product or service names are the property of their respective owners.
E2013–2014 Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Document Number: AFT27S010N
Rev. 2, 11/2014
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Freescale Semiconductor:
AFT27S010NT1