© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 6 1Publication Order Number:
2N6504/D
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Features
•Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 Volts
•300 A Surge Current Capability
•Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
K
G
A
TO−220AB
CASE 221A
STYLE 3
123
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4Anode
MARKING
DIAGRAM
AY WW
650x
x = 4, 5, 7, 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off−State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM,
VRRM 50
100
400
600
800
V
On-State Current RMS (180° Conduction Angles; TC = 85°C) IT(RMS) 25 A
Average On-State Current (180° Conduction Angles; TC = 85°C) IT(AV) 16 A
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) ITSM 250 A
Forward Peak Gate Power (Pulse Width ≤1.0 ms, TC = 85°C) PGM 20 W
Forward Average Gate Power (t = 8.3 ms, TC = 85°C) PG(AV) 0.5 W
Forward Peak Gate Current (Pulse Width ≤1.0 ms, TC = 85°C) IGM 2.0 A
Operating Junction Temperature Range TJ−40 to +125 °C
Storage Temperature Range Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction−to−Case RqJC 1.5 °C/W
*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM,
IRRM −
−−
−10
2.0 mA
mA
ON CHARACTERISTICS
*Forward On−State Voltage (Note 2) (ITM = 50 A) VTM − − 1.8 V
*Gate Trigger Current (Continuous dc) TC = 25°C
(VAK = 12 Vdc, RL = 100 W)T
C = −40°CIGT −
−9.0
−30
75 mA
*Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = −40°C) VGT − 1.0 1.5 V
Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C) VGD 0.2 − − V
*Holding Current TC = 25°C
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = −40°CIH−
−18
−40
80 mA
*Turn-On Time (ITM = 25 A, IGT = 50 mAdc) tgt − 1.5 2.0 ms
Turn-Off Time (VDRM = rated voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
tq−
−15
35 −
−
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, Exponential Waveform) dv/dt − 50 − V/ms
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2N6504 Series
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3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
C
T , MAXIMUM CASE TEMPERATURE ( C)°
dc180°
16
12
0
80
90
10
0
110
13
0
60°
α = 30°
0 4.0 8.0 12 20
α = CONDUCTION ANGLE
IT(AV), ON-STATE FORWARD CURRENT (AMPS)
α
90°
P , AVERAGE POWER (WATTS)
(AV)
180°
90°
24
0
8.0
16
32
TJ = 125°C
dc
60°
α = 30°
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
160 4.0 8.0 12 20
α = CONDUCTION ANGLE
α
Figure 1. Average Current Derating Figure 2. Maximum On−State Power Dissipation
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4
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3 0.5 1.0 2.0
25°C
125°C
0.4
0.1
ZqJC(t) = RqJC • r(t)
1 CYCLE
1.0
200
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TC = 85°C
f = 60 Hz
NUMBER OF CYCLES
225
250
275
300
20
2.0 3.0 4.0 6.0 8.0 10
0.1
0
0.01
t, TIME (ms)
3.0 5.0
175
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.2 2.01.6 2.4 2.80.8
30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k
I , PEAK SURGE CURRENT (AMP)
TSM
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) F
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 3. Typical On−State Characteristics Figure 4. Maximum Non−Repetitive Surge Current
Figure 5. Thermal Response
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5
TYPICAL TRIGGER CHARACTERISTICS
Figure 6. Typical Gate Trigger Current
versus Junction Temperature Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 8. Typical Holding Current
versus Junction Temperature
10
1
100
125110806550355−10−25 20
TJ, JUNCTION TEMPERATURE (°C)
IGT, GATE TRIGGER CURRENT (mA)
−40 95
VGT
125110958050355−40
0.8
−10−25 20
TJ, JUNCTION TEMPERATURE (°C)
0.6
0.4
0.2
, GATE TRIGGER VOLTAGE (VOLTS)
1.0
65
0.9
0.7
0.5
0.3
I , HOLDING CURRENT (mA)
H
TJ, JUNCTION TEMPERATURE (°C)
100
10
1
125110958050355−40 −10−25 20 65
2N6504 Series
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6
ORDERING INFORMATION
Device Package Shipping
2N6404 TO−220AB
500 Units / Box
2N6404G TO−220AB
(Pb−Free)
2N6405 TO−220AB
2N6405G TO−220AB
(Pb−Free)
2N6405T TO−220AB
2N6405TG TO−220AB
(Pb−Free)
2N6407 TO−220AB
2N6407G TO−220AB
(Pb−Free)
2N6407T TO−220AB
2N6407TG TO−220AB
(Pb−Free)
2N6408 TO−220AB
2N6408G TO−220AB
(Pb−Free)
2N6409 TO−220AB
2N6409G TO−220AB
(Pb−Free)
2N6409T TO−220AB
2N6409TG TO−220AB
(Pb−Free)
2N6504 Series
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7
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 −−− 1.15 −−−
Z−−− 0.080 −−− 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
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Phone: 81−3−5773−3850
2N6504/D
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