GATE ALSO BACKSIDE CONTACT SAND D ARE SYMMETRICAL 0.018 10.457) ALL DIMENSIONS IN INCHES FALL DIMENSIONS IN MILLIMETERS) pe n-channel JFET = Small Signal Amplifiers =) VHF Amplifiers = Oscillators a Mixers = Switches TYPE PACKAGE Single TO-72 Singte TO-92 Dual TO-71 Single Chip PERFORMANCE CURVES (25C unless otherwise noted) Output Characteristic 2 16 = 6 B12 oc c 2 o Zz os | c a o04 0 Vos - DRAIN SOURCE VOLTAGE (VOLTS) Transfer Characteristic 15 =168V _ 12 <q r z uw 2 oO z < ec a ; 2 -1.0 Vas - GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics Vos = 15 V f= TkHz E 3 Hi 121 gfs - FORWARD TRANSCONDUCTANCE (umbho} -1.0 -2.0 -3.0 4.0 Vas - GATE-SOURCE VOLTAGE (VOLTS) Output Characteristic Ves =0V < = = 2 wl o is 2 Qo z 4 a : 2 1 9 2 Vps - ORAIN SOURCE VOLTAGE {VOLTS} Transfer Characteristics Vos = 15V < bE 2 w c oc 2 eo gz < rc a 1 a Vag - GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics Vos = 15 V f= tkHz ga 8 x 8 Qfs - FORWARD TRANSCONDUCTANCE {umho) Vas - GATE-SOURCE VOLTAGE Siliconix BENEFITS: a Wide Input Dynamic Range High lg Breakpoint Voltage High Gain = Low Insertion Loss Switches PRINCIPAL DEVICES 2N3821-4, 2N4220-2, 2N4220A-22A 2N4223-24, 2N5556-58 2N3819, 2N5457-9, MPF109, MPF111 2N3921-2, 2N4084-5, 2N5045-7, U401-6 All of the above except 2N3819 Drain Current & Transconductance vs Gate-Source Voltage NR o 3 is g & {s04u7) JONVLONGNOOSNV HL GHYVMHOd - 36 ~ Sts @ T= 1kHe Vestoff) 'p = 1nA - 2-3 a) 6 7 ~ GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Ipss - SATURATION DRAIN CURRENT (mA) Leakage Currents vs Ambient Temperature =-30V, Vps= = 16 V, ID = 100 CURRENT {nA) T- TEMPERATURE (C) ON Resistance vs Ambient Temperature 15 Ip = 100 pA 14 geo 1.3 1.2 11 1.0 0.9 0.8 07 tpg - RELATIVE TO 25C VALUE 66 0.5 -55 -15. 25 CJ 105 145 T ~ TEMPERATURE (C) 5-25 1979 Siliconix incorporated TIN xiuool NRL iconix PERFORMANCE CURVES (Cont) (25C unless otherwise noted) Equivalent Input Noise Voltage and Noise Current vs Frequency e > 100 g < F 4 o > 2 10 2 4 iF : UH 49-16 10 100 mK 10K 100K f ~ FREQUENCY (Hz) Common-Source Capacitances vs Gate-Source Voltage Vos" 15 V f=1 < 2 uw og 2 FE 9 < z eo Vas - GATE-SOURCE VOLTAGE (VOLTS) Gate Operating Current vs Drain-Gate Voltage tg - GATE CURRENT (nA) Ip = 100 o 5 10 6 20 25 30 VpG - ORAIN-GATE VOLTAGE (VOLTS) Static Drain-Source ON Resistance vs Gate-Source Cutoff Voltage 500 Ip = 100 nA =0 100 "DS(on ORAIN Sones) ON RESISTANCE 0 1.0 -2.0 -30 -4.0 -5.0 -60 -7.0 Vas (off) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 10713 (2H/YVd WV) LNIYHND 3SION Nr Common-Source Output Admittance vs Drain-Source Voltage 1000 Ves20 =1 dos ~ OUTPUT ADMITTANCE (umhos)} 0 8 16 24 32 40 Vps - DRAIN-SOQURCE VOLTAGE (VOLTS) Common-Source Forward Transadmittance vs Frequency 10 _ =9 yfs - FORWARD TRANSADMITTANCE (mmhos) 01 10 50 200 f - FREQUENCY (MHz) Common-Source Reverse Transfer Admittance vs Frequency 0 Yrs - TRANSFER ADMITTANCE {mmhos) 01 10 100 200 f - FREQUENCY (MHz) Common-Source Forward Transconductance vs Drain Current 10K 100 0.01 0.1 1.0 10 100 1p ORAIN CURRENT (mA) 9s FORWARD TRANSCONDUCTANCE (zmhos) x Common-Source Output Admittance vs Drain Current Gos - OUTPUT ADMITTANCE {umhos} Yos - OUTPUT ADMITTANCE {mmhos) VALUE RELATIVE TO 25C VALUE Yis - INPUT ADMITTANCE (mmhos} 100 0.01 0.1 10 Ip - DRAIN CURRENT (mA) Common-Source Input Admittance vs Frequency oS =1bV =o OT 10 50 100 200 f - FREQUENCY (MHz) Common-Source Output Admittance vs Frequency Ves =0 10 100 200 f - FREQUENCY (MHz) Drain Current and Transconductance vs Ambient Temperature 16 14 Vos = 15 V 13 Ves=0 @f= 1kH 12 St = ui 1.0 038 0.8 07 O6 os -65 25 65 105 145 T TEMPERATURE (C) 5-26 1979 Siliconix incorporated