Data Sheet, V 1.0, July 2008
TLE4998S3
TLE4998S4
Programmable Linear Hall Sensor
Sensors
Never stop thinking.
Edition 2008-07
Published by Infineon Techn ologies AG,
Am Campeon 1-12,
85579 Neubiberg, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
Attention pleas e!
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characteristics.
Terms of delivery and rights to technical change reserved.
We he reby disclai m any and all warranties, i ncludi ng but not limited to warranties of non-infringement, regardi ng
circuits, descri ptions and charts stated herein.
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Template: mc_a5_ds_tmplt.fm / 4 / 2004-09-15
TLE4998S
Revision History: 2008-07 V 1.0
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TLE4998S
Data Sheet 4 V 1.0, 2008-07
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.2 Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3 Principle of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.4 Transfer Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Electrical, Thermal, and Magnetic Parameters . . . . . . . . . . . . . . . . . . . 14
Calculation of the Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 16
Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Magnetic Field Path . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Temperature Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.1 Magnetic Field Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6.2 Gain Setting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.3 Offset Setting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.4 DSP Input Low-Pass Filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.5 Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7 Error Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7.1 Voltages Outside the Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7.2 EEPROM Error Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
8 Temperature Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8.1 Parameter Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
9 Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
9.1 Calibration Data Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
9.2 Programming Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
9.3 Data Transfer Protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
9.4 Programming of Sensors with Common Supply Lines . . . . . . . . . . . . . . . 30
10 Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
11 TLE4998S3 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
12 TLE4998S4 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
13 SENT Output Definition (SAE J2716) . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
TLE4998S
Data Sheet 5 V 1.0, 2008-07
13.1 Basic SENT Protocol Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
13.2 Unit Time Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
13.3 Checksum Nibble Details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Programmable Linear Hall Sensor
Data Sheet 6 V 1.0, 2008-07
TLE4998S3
TLE4998S4
Type Marking Ordering Code Package
TLE4998S3 4998S3 SP412108 PG-SSO-3-10
TLE4998S4 4998S4 SP412110 PG-SSO-4-1
1 Overview
1.1 Features
Single Edge Nibble Transmission (SENT) open-drain
output signal (SAE J2716)
20-bit Digital Signal Processing (DSP)
Digital temperature compensation
16-bit overall resolution
Operates within automotive temperature range
Low drift of output signal over temperature and lifetime
Programmable parameters stored in EEPROM with
single-bit error correction:
SENT unit time
Magnetic range and sensitivity (gain), p olarity of the
output slope
Offset
Bandwidth
Clamping levels
Customer temperature compensation coefficients
Memory lock
Re-programmable until memory lock
Single supply voltage 4.5 - 5.5 V (4.1 - 16 V in extended range)
Operation between -200 mT and +200 mT within three ranges
Reverse-polarity and overvoltage protection for all pins
Output short-circuit protection
On-board diagnostics (overvoltage, EEPROM error, start up)
Output of internal magnetic field values and temperature
Programming and operation of multiple sensors with common power supply
Two-point calibration of magnetic transfer function without iteration steps
High immunity against mechanical stress, EMC, ESD
TLE4998S
Overview
Data Sheet 7 V 1.0, 2008-07
1.2 Target Applications
Robust replacement of potentiometers
No mechanical abrasion
Resistant to humidity, temperature, pollution and vibration
Linear and angular position sensing in automotive applications such as pedal position,
suspensi on control, throttle position, headlight levelling, and steering torque sensing
Sensing of high current for battery management, motor control, and electronic fuses
1.3 Pin Configuration
Figure 1 and Figure 2 show the location of the Hall element in the chip and the distance
between Hall probe and the surface of the package.
Figure 1 TLE4998S3 Pin Configuration and Hall Cell Location
Table 1 TLE4998S3 Pin Definitions and Functions
Pin No. Symbol Function
1VDD Supply voltage / programming interface
2GND Ground
3OUT Output / programming interface
1
Center of
Hall Probe
23
AEP0371
7
0.38
±0.05
2.03±0.1
1.625
±0.1
Hall-Probe
Branded Sid
e
TLE4998S
Overview
Data Sheet 8 V 1.0, 2008-07
Figure 2 TLE4998S4 Pin Configuration and Hall Cell Location
Table 2 TLE4998S4 Pin Definitions and Functions
Pin No. Symbol Function
1TST Test pin (connection to GND is recommended)
2VDD Supply voltage / programming interface
3GND Ground
4OUT Output / programming interface
AEP0365
4
PG-SSO-4-1: 0.3
d : Distance chip to branded side of
IC
mm
±0.08
Hall-Probe
Branded Side
d
2 3 41
Center of
sensitive area
2.67
1.53
BBA 0.2
A0.2
TLE4998S
General
Data Sheet 9 V 1.0, 2008-07
2 General
2.1 Block Diagram
Figure 3 is a simplified block diagram.
Figure 3 Block Diagram (TLE4998S4)
2.2 Functional Description
The linear Hall IC TLE4998S has been designed specifically to meet the requirements
of highly accurate rotation and position detection, as well as for current measurement
applications.
The sensor provides a digital SENT signal based on the SAE J2716 standard, which
consists of a sequence of pulses. Each transmiss ion has a constant number of nibbles
containing the Hall value, the temperature, and status information of the sensor.
The output stage is an open-drain driver pu lling the output pin to low only. Therefore, the
high level needs to be obtained by an external pull-up resistor. This output type has the
advantage that the receiver may use an even lower supply voltage (e.g. 3.3 V). In this
case the pull-up resistor must be connected to the given receiver supply.
The IC is produced in BiCMOS technology with high voltage capability, and it also has
reverse-polarity protection.
spinning
HALL
Bias
A
D
DSP
A
D
Temp.
Sense
ROM
EEPROM Interface
OUT
VDD
GND
Supply
SENT
TST*)
*) TLE499 8S4 only
TLE4998S
General
Data Sheet 10 V 1.0, 2008-07
Digital signal processing using a 16-bit DSP architecture together with digital
temperature compensation guarantee excellent long-time stability compared to analog
compensation methods.
While the overall resolution is 16 bits, some internal stages work with resolutions up to
20 bits.
2.3 Principle of Operation
A magnetic flux is measured by a Hall-effect cell
The output signal from the Hall-effect cell is converted from analog to digital
The chopped Hall-effect cell and continuous-time A/D conversion ensure a very low
and stable magnetic offset
A programmable low-pass filter to reduce noise
The temperature is measured and A/D converted, too
Temperature compensation is done digitally using a second-order function
Digital processing of output value is based on zero field and sensitivity value
The output value range can be clamped by digital limiters
The final output value is represented by the data nibbles of the SENT protocol
TLE4998S
General
Data Sheet 11 V 1.0, 2008-07
2.4 Transfer Functions
The examples in Figure 4 show how different magnetic field ranges can be mapped to
the desired output value ranges.
Polarity Mode:
Bipolar: Magnetic fields can be measured in both orientations. The limit
points do not necessarily have to be symmetrical around the zero field point
Unipolar: Only north- or south-oriented magnetic fields are measured
Inversion: The gain can be set to both positive and negative values
Figure 4 Examples of Operation
0
4095 /
65535
50
-50
100
-100
200
-200
OUT
12
/
OUT
16
0 0
B (mT) B (m T) B (m T)
000
OUT
12
/
OUT
16
OUT
12
/
OUT
16
4095 /
65535 4095 /
65535
Example 1:
-Bipolar Example 2:
-Unipolar
- Big offset
Example 3:
- Bipolar
- Inv erted ( ne g. gain)
TLE4998S
Maximum Ratings
Data Sheet 12 V 1.0, 2008-07
3 Maximum Ratings
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 3 Absolute Maximum Ratings
Parameter Symbol Limit Values Unit Notes
min. max.
Storage temperature TST - 40 150 °C
Junction temperature TJ- 40 1701)
1) For limited time of 96 h. Depends on customer temperature lifetime cycles. Please ask for support by Infineon
°C
Voltage on VDD pin with
respect to ground VDD -18 18 V2)
2) Higher voltage stress than absolute maximum rating, e.g. 150% in latch-up tests is not applicable. In such
cases, Rseries 100 Ω for current limitation is required
Supply current
@ overvoltage VDD max. IDDov -15 mA
Reverse supply current
@ VDD min. IDDrev -1 0mA
Voltage on output pin with
respect to ground VOUT -13)
3) IDD can exceed 10 mA when the voltage on OUT is pulled below -1 V (-5 V at room temperature)
184)
4) VDD = 5 V, ope n drain permanent low, for max. 10 minutes
V
Magnetic field BMAX -unlimited T
ESD protection VESD -4.0 kV According HBM
JESD22-A114-B 5)
5) 100 pF and 1.5 kΩ
TLE4998S
Operating Range
Data Sheet 13 V 1.0, 2008-07
4 Operating Range
The following operating conditions must not be exceeded in order to ensure correct
operation of the TLE4998S. All parameters specified in the following sections refer to
these operating conditions, unless otherwise indicated.
Table 4 Operating Range
Parameter Symbol Limit Values Unit Notes
min. max.
Supply voltag e VDD 4.5 5.5 V
4.11)
1) For reduced output accuracy
162)
2) For supply voltages > 12 V, a series resistance Rseries 100 Ω is recommended
VExtended range
Output pull-up voltage3) Vpull-up -18 V
Load resistance3)
3) Required output protocol characteristics depend on these parameters, RL must be according to max. output
current
RL1 - kΩ
Output current3) IOUT 0 5 mA
Load capacitance3) CL1 8 nF
Junction temperature TJ- 40 125
1504)
4) For reduced magnetic accuracy; extended limits are taken for characteristics
Note: Keeping signal levels within the limits specified in this table ensures operation
without overload conditions.
°C For 5000 h
For 1000 h not additive
TLE4998S
Electrical, Thermal, and Magnetic Parameters
Data Sheet 14 V 1.0, 2008-07
5 Electrical, Thermal, and Magnetic Parameters
Table 5 Electrical Characteristics
Parameter Symbol Limit Values Unit Notes
min. typ. max.
SENT transmission time tSENT - - 1 ms 1)
1) Transmission time depends on the data values being sent and on int. RC oscillator freq. variation of +/- 20%
Supply current IDD 3 6 8 mA
Output current @ OUT
shorted to supply lines IOUTsh -95 -mA VOUT = 5 V, max. 10
minutes
Thermal resistance
TLE4998S3 RthJA -219 -K/W Junction to air
RthJC -47 -K/W Junction to case
Thermal resistance
TLE4998S4 RthJA -240 -K/W Junction to air
RthJC -41 -K/W Junction to case
Power-on time2)
2) Response time to set up output data at power on when a constant field is applied. The first value given has a
± 5% error, the second value has a ± 1% error. Measured with 640-Hz low-pass filter
tPon -0.7
15 2
20 ms ± 5% target out value
± 1% target out value
Power-on reset level VDDpon -3.6 4 V
Output impedance ZOUT 19 30 44 kΩ3)
3) VDD = 5V, open drain high state, voltage on OUT pin typ. 84% of VDD
Output fall time tfall 2 - 4 µs VOUT 4.5 V to 0.5 V 4)
4) For VDD = 5 V, RL = 2.2 kΩ, CL = 4.7 nF
Output rise time trise -20 -µs VOUT 0.5 V to 4.5 V
4)5)
Output low time tlow - 9 - µs SENT edge generation
Output min. high time tHIGH min -36 -µs SENT “0” nibble
Output max. high time tHIGH max -168 -µs SENT synchron. frame
Output low saturation
voltage VOUTsat -0.3
0.2 0.6
0.4 V IOUTsink = 5 mA
IOUTsink = 2.2 mA
Output noise (rms) OUTnoise - 1 2.5 LSB12 6)
TLE4998S
Electrical, Thermal, and Magnetic Parameters
Data Sheet 15 V 1.0, 2008-07
5) Depends on external RL and CL
6) Range 100 mT, Gain 2.23, internal LP filter 244 Hz, B = 0 mT, T = 25 °C
V
OUT *)
V
DD
90% V
DD
10% V
DD
t
rise t
t
fall
*)
R
L
to V
DD
assumed
t
low
t
HIGH
V
OUTsat
TLE4998S
Electrical, Thermal, and Magnetic Parameters
Data Sheet 16 V 1.0, 2008-07
Calculation of the Junction Temperature
The internal power dissipation PTOT of the sensor increases the chip junction
temperature above the ambient temperature.
The power multiplied by the total thermal resistance RthJA (Junction to Ambient) added
to TA leads to the final junction temperature. RthJA is the sum of the addition of the two
components, Junction to Case and Case to Ambient.
RthJA = RthJC + RthCA
TJ = TA +
Δ
T
Δ
T = RthJA x PTOT = RthJA x ( VDD x IDD + VOUT x IOUT ) IDD , IOUT > 0, if direction is into IC
Example (assuming no load on Vout and TLE4998S4 type):
VDD = 5 V
IDD = 8 mA
Δ
T = 240 [K/W] x (5 [V] x 0.008 [A] + 0 [VA] ) = 9.6 K
For moulded sensors, the calculation with RthJC is more adequate.
Magnetic Parameters
Table 6 Magnetic Characteristics
Parameter Symbol Limit Values Unit Notes
min. typ. max.
Sensitivity S1)
1) Defined as ΔOUT / ΔB
± 8.2 -± 245 LSB12/
mT Programmable2)3)
2) Programmable in steps of 0.024%
3) @ VDD = 5 V and TJ = 25 °C
Temperature
coefficient of sensitivity TC -150 0150 ppm/
°C
4)
See Figure 5
Magnetic field range MFR ± 50 ± 1005) ± 200 mT Programmable 6)
Integral nonlinearity INL - 0.1 -0.1 %MFR 7)9)
Magnetic offset BOS - 400 0400 μT8)9)
Magnetic offset drift ΔBOS - 5 - 5 μT / °C Error band9)
Magnetic hysteresis BHYS 0 - 10 μT10)
TLE4998S
Electrical, Thermal, and Magnetic Parameters
Data Sheet 17 V 1.0, 2008-07
Figure 5 Drift of Temperature Coefficient
4) For any 1st and 2nd order polynomial, coefficient within definition in Chapter 8.
5) This range is also used for temperature and offset pre-calibration of the IC
6) Depending on offset and gain settings, the output may already be saturated at lower fields
7) Gain setup is 1.0
8) In operating temperature range and over lifetime
9) Measured at ± 100 mT range
10) Measured in 100 mT range, Gain = 1, room temperature
ΔS ~
S(T)/S
0
-1
T
j
ΔS0
max. pos.
TC-error
TCmax = ΔS/ΔT
max. neg.
TC-error
TCmin = ΔS/ΔT
T0
Tmin Tmax
0
TLE4998S
Signal Processing
Data Sheet 18 V 1.0, 2008-07
6 Signal Processing
The signal flow diagram in Figure 6 shows the signal path and data-processing
algorithm.
Figure 6 Signal Processing Flow
Magnetic Field Path
The analog output signal of the chopped Hall-effect cell is converted to a digital signal
in the continuous-time A/D converter. The range of the chopped A/D co nverter can be
set in several steps (see Table 7). This gives a suitable level for the A/D converter
After the A/D conversion, a digital low-pass filter reduces the bandwidth (Table 11)
A multiplier amplifies the value depending on the gain (see Table 9) and temperature
compensation settings
The offset value is added (see Table 10)
A limiter reduces the resulting signal to 16 bits (see Chapter 13) and feeds the
Protocol Generation stage
Temperature Compensation
(Details are listed in Chapter 8)
The output signal of the temperature cell is also A/D converted
Stored in
EEPR OM
Memory
+
X
A
D
Hall
Sensor
Limiter
(Clamp)
out
X
Range LP
Offset
Gain
A
D +
-T0TC1
Temperature
Compensation
1
+
X
TC2
X
X
Protocol
Generation
Temperature
Sensor
TLE4998S
Signal Processing
Data Sheet 19 V 1.0, 2008-07
The temperature is normalized by subtraction of the reference temperature T0 value
(zero point of the quadratic function)
The linear path is multiplied with the TC1 value
In the quadratic path, the temperature difference to T0 is squared and multiplied with
the TC2 value
Both path outputs are added together and multiplied with the Gain value from the
EEPROM
6.1 Magnetic Field Ranges
The working range of the magnetic field defines the input range of the A/D converter. It
is always symmetrical around the zero field point. Any two points in the magnetic field
range can be selected to be the end points of the output value. The output value is
represented within the range between the two points.
In the case of fields higher than the range values, the output signal may be distorted. The
range must be set before the calibration of offset and gain.
Table 7 Range Setting
Range Range in mT1)
1) Ranges do not have a guara nteed absolute accuracy. The temperature pre-calibration is performed i n the mid
range (100 mT)
Parameter R
Low ± 50 3
Mid ± 100 12)
2) Setting R = 2 is not used, internally changed to R = 1
High ± 200 0
Table 8 Range
Parameter Symbol Limit Values Unit Notes
min. max.
Register size R2bit
TLE4998S
Signal Processing
Data Sheet 20 V 1.0, 2008-07
6.2 Gain Setting
The overall sensitivity is defined by the range and the gain setting. The output of the ADC
is multiplied with the Gain value.
The Gain value can be calculated by
:
6.3 Offset Setting
The offset value corresponds to an output value with zero field at the sensor.
The offset value can be calculated by:
Table 9Gain
Parameter Symbol Limit Values Unit Notes
min. max.
Register size G15 bit Unsigned integer value
Gain range Gain - 4.0 3.9998 -1)2)
1) For Gain values between - 0.5 and + 0.5, the numerical accuracy decreases
To obtain a flatter output curve, it is advisable to select a higher range setting
2) A gain value of +1.0 corresponds to typical 32 LSB12/mT sensitivity (100 mT range, not guaranteed). It is
crucial to do a final calibration of each IC within the application using the Gain/OUTOS value
Gain quantization steps ΔGain 244.14 ppm Corresponds to 1/4096
Table 10 Offset
Parameter Symbol Limit Values Unit Notes
min. max.
Register size OS 15 bit Unsigned integer value
Offset range OUTOS -16384 16383 LSB12 1)
1) Infineon pre-calibrate s the samples at zero field to 50% output value (100 mT range), but does not guarantee
the value. Therefore it is crucial to do a final calibration of each IC within the application
Offset quantization
steps ΔOUTOS 1LSB12
Gain G 16384()
4096
------------------------------
=
OUTOS OS 16384=
TLE4998S
Signal Processing
Data Sheet 21 V 1.0, 2008-07
6.4 DSP Input Low-Pass Filter
A digital low-pass filter is placed between the Hall A/D converter and the DSP, and can
be used to reduce the noise level. The low-pass filter has a constant DC amplification of
0 dB (Gain of 1), which means that its setting has no influence on the internal Hall ADC
value.
The bandwidth can be set to any of 8 values.
Note: In range 7 (filter off), the output noise increases.
Table 11 Low Pass Filter Setting
Note: Parameter LP Cutoff frequency in Hz (-3dB point)1)
1) As this is a digital filter running with an RC-based oscillator, the cutoff frequency may vary within ±20%
080
1240
2440
3640
4860
51100
61390
7off
Table 12 Low-Pass Filter
Parameter Symbol Limit Values Unit Notes
min. max.
Register size LP 3bit
Corner frequency
variation Δ f - 20 + 20 %
TLE4998S
Signal Processing
Data Sheet 22 V 1.0, 2008-07
Figure 7 shows the filter characteristics as a magnitude plot (the highest setting is
marked). The “off” position would be a flat 0 dB line. The update rate after the low-pass
filter is 16 kHz.
Figure 7 DSP Input Filter (Magnitude Plot)
10
1
10
2
10
3
0
-6
-5
-4
-3
-2
-1
M agnit ude (dB)
Frequency (Hz)
TLE4998S
Signal Processing
Data Sheet 23 V 1.0, 2008-07
6.5 Clamping
The clamping function is useful for separating the output range into an operating range
and error ranges. If the magnetic field is exceeding the selected measurement range, the
output value OUT is limited to the clamping values.
The clamping values are calculated by:
Clamping value low (deactivated if CL=0):
Clamping value high (deactivated if CH=127):
Table 13 Clamping
Parameter Symbol Limit Values Unit Notes
min. max.
Register size CL,CH 2 x 7 bit (0...127)
Clamping value low OUTCL 065535 LSB16 1)
1) For CL = 0 and CH = 127, the clamping function is disabled
Clamping value high OUTCH 065535 LSB16 1) 2)
2) OUTCL < OUTCH mandatory
Clamping quantization
steps
Δ
OUTCx 512 LSB16 3)
3) Quantization starts for CL at 0 LSB16 and for CH at 65535 LSB16
OUTCL CL 32 16⋅⋅=
OUTCH CH 1+()32 16 1⋅⋅=
TLE4998S
Signal Processing
Data Sheet 24 V 1.0, 2008-07
Figure 8 shows an example in which the magnetic field range between Bmin and Bmax
is mapped to output values between 10240 LSB16 and 55295 LSB16.
Figure 8 Clamping Example
Note: The clamping high value must be above the low value. If OUTCL is set to a higher
value than OUTCH, the OUTCH value is dominating. This would lead to a constant
output value independent of the magnetic field strength.
0Bmin
B (mT)
Bmax
65535 Error range
Error range
Oper ating ra nge
OUTCH
OUT
(LSB16)
OUTCL
55295
10240
TLE4998S
Error Detection
Data Sheet 25 V 1.0, 2008-07
7 Error Detection
Different error ca ses can be detected by the On-Board Diagnostics (OBD) and reported
to the microcontroller in the status nibble (see Chapter 13).
7.1 Voltages Outside the Operating Range
The output signals an error condition if VDD crosses the overvoltage threshold level.
7.2 EEPROM Error Correction
The parity method is able to correct a single bit in the EEPROM line. One other single bit
error in another EEPROM line can also be detected, but not corrected. In an
uncorrectable EEPROM failure, the open drain stage is disabled and kept in the off state
permanently (high ohmic/sensor defect).
Table 14 Overvoltage
Parameter Symbol Limit Values Unit Notes
min. typ. max.
Overvoltage threshold VDDov 16.65 17.5 18.35 V1)
1) Overvoltage bit activated in status nibble, output stays in “off” state (high ohmic)
TLE4998S
Temperature Compensation
Data Sheet 26 V 1.0, 2008-07
8 Temperature Compensation
The magnetic field strength of a magnet depends on the temperature. This material
constant is specific for the different magnet types. Therefore, the TLE4998S offers a
second-order temperature compensation polynomial, by which the Hall signal output is
multiplied in the DSP. There are three parameters for the compensation:
Reference temperature T0
A linear part (1st order) TC1
A quadratic part (2nd order) TC2
The following formula describes the sensitivity dependent on the temperature in relation
to the sensitivity at the reference temperature T0:
For more information, please refer to the signal processing flow in Figure 6.
The full temperature compensation of the complete system is done in two steps:
1. Pre-calibration in the Infineon final test
The parameters TC1, TC2, T0 are set to maximally flat temperature characteristics
with respect to the Hall probe and internal analog processing parts.
2. Overall system calibration
The typical coefficients TC1, TC2, T0 of the magnetic circuitr y are programmed. This
can be done deterministically, as the algorithm of the DSP is fully reproducible. The
final setting of the TC1, TC2, T0 values depend on the pre-calibrated values.
Table 15 Temperature Compensation
Parameter Symbol Limit Values Unit Notes
min. max.
Register size TC1TL - 9 bit Unsigned integer values
1st order coefficient TC1TC1-1000 2500 ppm/ °C 1)
1) Full adjustable range: -2441 to +5355 ppm/°C, can be only used after confirmation by Infineon
Quantization steps of TC1qTC115.26 ppm/ °C
Register size TC2TQ - 8 bit Unsigned integer values
2nd order coefficient TC2TC2- 4 4 ppm/ °C² 2)
2) Full adjustable range: -15 to +15 ppm/°C², can be only used after confirmation by Infineon
Quantization steps of TC2qTC20.119 ppm/ °C²
Reference temp. T0- 48 64 °C
Quantization steps of T0qT01°C 3)
3) Handled by algorithm only (see Application Note)
STC T() 1TC1TT
0
()×TC2TT
0
()
2
×++=
TLE4998S
Temperature Compensation
Data Sheet 27 V 1.0, 2008-07
8.1 Parameter Calculation
The parameters TC1 and TC2 may be calculated by:
Now the digital output for a given field BIN at a specific temperature can be calculated by:
BFSR is the full-range magnetic field. It is dependent on the range setting (e.g 100 mT).
S0 is the nominal sensitivity of the Hall probe times the Gain factor set in the EEPROM.
STC is the temperature-dependent sensitivity factor calculated by the DSP.
STCHall is the temperature behavior of t he Hall probe.
The pre-calibration at Infineon is performed such that the following condition is met:
Within the application, an additional factor BIN(T) / BIN(T0) is given due to the magnetic
system. STC then needs to be modified to STCnew so that the following condition is
satisfied:
Therefore, the new sensitivity parameters STCnew can be calculated from the pre-
calibrated setup STC using the relationship:
TC1TL 160
65536
---------------------- 1000000×=
TC2TQ 128
8388608
----------------------- 1000000×=
OUT 2BIN
BFSR
-------------STC
×STCHall
×S04096××
⎝⎠
⎜⎟
⎛⎞
OUTOS
+=
STC TJT0
()STCHall TJ
()×1
BIN T()
BIN T0
()
-------------------- STCnew T() STCHall T()×× STC T() STCHall T()×1≈≈
BIN T()
BIN T0
()
-------------------- STCnew T()×STC T()
TLE4998S
Calibration
Data Sheet 28 V 1.0, 2008-07
9Calibration
For the calibration of the sensor, a special hardware interface to a PC is required. All
calibration and setting bits can be temporarily written into a Random Access Memory
(RAM). This allows the EEPROM to remain untouched during the entire calibration
process, since the number of the EEPROM programming cycles is limited. Therefore,
this temporary setup (using the RAM only) does not stress the EEPROM.
The digital signal processing is completely deterministic. This allows a two-point
calibration to be performed in one step without iterations. After measuring the Hall output
signal for the two end points, the signal processing parameters Gain and Offset can be
calculated.
Table 16 Calibration Characteristics
Parameter Symbol Limit Values Unit Notes
min. max.
Ambient temperature at
calibration TCAL 10 30 °C
2 point Calibration
accuracy1)
1) Corresponds to ± 0.2% accuracy in each position
Δ
OUTCAL1 -8 8LSB12 Position 1
Δ
OUTCAL2 -8 8LSB12 Position 2
TLE4998S
Calibration
Data Sheet 29 V 1.0, 2008-07
9.1 Calibration Data Memory
When the MEMLOCK bits are programmed (two redundant bits), the memory c onten t is
frozen and may no longer be changed. Furthermore, the programming interface is locked
out and the chip remains in application mode only, preventing accidental programming
due to environmental influences.
Figure 9 EEPROM Map
A matrix parity architecture allows automatic correction of any single-bit error. Each row
is protected by a row parity bit. The sum of bits set (including this bit) must be an odd
number (ODD PARITY). Each column is additionally protected by a column parity bit.
Each bit in the even positions (0, 2, etc.) of all lines must sum up to an even number
(EVEN PARITY), and each bit in the odd positions (1, 3, etc.) must have an odd sum
(ODD PARITY). The parity column must have an even sum (EVEN PARITY).
This system of different parity calculations also protects against many block errors (such
as erasing a full line or even the whole EEPROM).
When modifying the application bits (such as Gain, Offset, TC, etc.), the parity bits must
be updated. As for the column bits, the pre-calibration area must be read out and
considered for correct parity generation as well.
Note: A specific programming algorithm must be followed to ensure data retention.
A detailed separate programming specification is available on request.
User-Calibration Bits
Pre- Calibr at ion Bit s
Column Parity Bits
R ow Par ity Bits
TLE4998S
Calibration
Data Sheet 30 V 1.0, 2008-07
9.2 Programming Interface
The VDD pin and the OUT pin are used as a two-wire interface to transmit the EEPROM
data to and from the sensor.
This allows:
Communication with high data reliability
The bus-type connection of several sensors and separate programming via the OUT
pin
9.3 Data Transfer Protocol
The data transfer protocol is described in a separate document (User Programming
Description), available on request.
9.4 Programming of Sensors with Common Supply Lines
In many automotive applications, two sensors are used to measure the same parameter.
This redundancy makes it possibl e to continue operation in an emergency mode. If both
sensors use the same power supply lines, they can be programmed together in parallel.
Table 17 Programming Characteristics
Parameter Symbol Limit Values Unit Notes
min. max.
Number of EEPROM
programming cycles NPRG -10 Cycles1)
1) 1 cycle is the simultaneous change of 1 bit
Programming allowed
only at start of lifetime
Ambient temperature at
programming TPRG 10 30 °C
Programming time tPRG 100 -ms For complete memory 2)
2) Depending on clock frequency at VDD, write pulse 10 ms ±1%, erase pulse 80 ms ±1%
Calibration memory -150 Bit All active EEPROM bits
Error Correction -26 Bit All parity EEPROM bits
TLE4998S
Application Circuit
Data Sheet 31 V 1.0, 2008-07
10 Application Circuit
Figure 10 shows the connection of multiple sensors to a microcontroller.
Figure 10 Application Circuit
Note: For calibration and programming, the interface has to be connected directly to the
OUT pin.
The application circuit shown should be regarded as an example only. It will need to be
adapted to meet the requirements of other specific applications.
TLE
4998
optional
V
dd
CC
in1
CC
in2
V
GND
47nF
1 nF
2k2
4.7nF
47nF
2k2
1 nF
4.7nF
µC
out
V
DD
GND
TLE
4998
out
V
DD
GND
50
50
Voltage Supply
Sensor Voltage Supply
µC
VDD
OUT1
GND
OUT2
Sensor
Module ECU
Module
TLE4998S
TLE4998S3 Package Outlines
Data Sheet 32 V 1.0, 2008-07
11 TLE4998S3 Package Outlines
Figure 11 PG-SSO-3-10 (Plastic Green Single Small Outline Package)
1) No solder function area
Molded body dimensions do not unclude plastic or metal protrusion of 0.15 max per side
±0.3
12.7
±0.4
6.35
12.7
±1
Total tolerance at 19 pitches ±1
±0.3
4
19
±0.5
9
-0.50
+0.75
33 MAX.
(Useable
Length)
(10)
±0.5
18
A
±0.5
6
1
-1
-0.15
0.25
±0.1
0.39
Tape
Adhesive
Tape
(0.25)
1
±0.2 1)
0.1 MAX.
0.5
0.5
±0.05
±0.1
0.42 3x
1.5
±0.05
4.06
4.05
±0.05
2 x 1.27 = 2.54
A
2
±0.05
1.5
0.36
±0.05
0.82
±0.05
P-PG-SSO-3-10-PO V02
45˚
123
B
B
C2
C
TLE4998S
TLE4998S4 Package Outlines
Data Sheet 33 V 1.0, 2008-07
12 TLE4998S4 Package Outlines
Figure 12 PG-SSO-4-1 (Plastic Green Single Small Outline Package)
1)
1 MAX.
0.2
(0.25) 0.1 MAX.
1 x 45˚ 1.9 MAX.
±1˚
±0.08
5.16
±0.05
5.34
0.2+0.1
-0.1
±0.08
±0.06
3.71
3.38
0.25±0.05
A
2
1
±0.05
0.4
0.5
4x 0.6 MAX.
1.27 3 x 1.27 = 3.81
Total tolerance at 10 pitches ±1
1
) No solder function area
±0.3
±0.4
6.35 12.7
12.7±1
±0.5
-0.5
+0.75
4±0.3
9
GPO0535
7
-0.15
±0.1
Tape
Adhesiv
e
Tape
0.25
0.39
±0.5
A
18
6
(Useable Length)
(14.8)
23.8±0.5
38 MAX.
-1
1
1432
TLE4998S
SENT Output Definition (SAE J2716)
Data Sheet 34 V 1.0, 2008-07
13 SENT Output Definition (SAE J2716)
The sensor supports a basic version of the Single Edge Nibble Transmission (SENT)
protocol defined by SAE. The main difference between the standard version and its
implementation in the TLE4998 is the usage of an open drain instead of a push-pull
output.
13.1 Basic SENT Protocol Definition
The single edge is defined by a 9-µs low pulse on the output, followed by the high
time defined in the protocol (nominal values, may vary by tolerance of internal RC
oscillator and the programming, see Section 13.2). All values are multiples of a 3-µs
unit time frame concept. A transfer consists of the following parts:A synchronization
period of 168 µs (in parallel, a new sample is calculated)
A status nibble of 36-81 µs
Three data nibbles of 36-81 µs (data packet 1 with a length of 108-243 µs)
Three data nibbles of 36-81 µs (data packet 2 with a length of 108-243 µs)
A CRC nibble of 36-81 µs
Figure 13 SENT Frame
The CRC checksum calculation includes the status nibble and the data nibbles. This
leads to a minimum transfer time of 456 µs, and a maximum transfer time of 816 µ s per
sample.
It is important to know that the sampling time (when values are taken for temperature
compensation) here is always defined as the beginning of the synchronization period;
during this period, the resulting data is always calculated from scratch.
compensate the sample transfer compensated sample
S a mp ling p o int:
values taken from
decima tion filter
register
Sensor processing
Output pin (physical)
Transferred data (logical)
sync. period Status
nibble
Data
nibble 1
hi
g
h
Data
nibble 2
low
CRC
nibble
Data
nibble 1
mid
Next sampe
TLE4998S
SENT Output Definition (SAE J2716)
Data Sheet 35 V 1.0, 2008-07
As only one Hall value needs to be transferred within one sequence, the second data
package is divided into two parts (see Table 20):
First, the remaining 4 LSBs of the Hall signals are transferred in the first data nibble.
This means the receiver may use the whole 16-bit data available in the sensor when
reading and using all 4 nibbles transferred.
Second, the temperature is transferred as an 8-bit value. The value is transferred in
unsigned integer format and corresponds to -55°C to 200°C. For example, transferring
the value 55 corresponds to 0°C. The temperature is additional information and
although it is not calibrated, may be used for a plausibility check, for example.
The status nibble as defined in the SAE standard has two free bits (the LSBs or first and
second bit). These bits contain the selected magnetic range of the sensor and therefore
allow the received data to be interpret ed easily.
As no serial data is transferred with the IC, the r emaining bits of the status nibble are not
required. The MSB (fourth bit) notifying a start of a serial transmission and the data bit
(or third bit) would be kept zero. Thus, these bits are used in a more suitable way for this
sensor, as shown in Table 20.
In case of startup- or supply overvoltage condition, the open-drain stage is disabled
(high ohmic) and the corresponding status bits are set. After VDD has returned to the
normal operating range, this status information will be transmitted within the first SENT
transmission.
In case of uncorrectable EEPROM failure, the open-drain stage is disabled and is kept
in “switched off” state permanently (high ohmic/ sensor defect). The fourth bit is switched
to “1” for the first data package transferred after a reset. This allows the receiver to detect
low-voltage situations or EMC problems of the sensor. The third bit is set to “1” in case
of an over-voltage condition of the IC. This signals that a sensor is still functioning, but
its performance may be out of specification. It enables an early warning for high supply
voltage, before the sensor completely stops functioning (e.g. VDD > 17.5 V, see
Chapter 7.1).
Table 18 Mapping of Temperature Value
Junction Temperature Typ. Decimal Value from Sensor Note
- 55°C 0Theoretical lower limit1)
1) Theoretical range of temperature values, not operating temperature range
0°C 55
25°C 80
200°C 255 Theoretical upper limit1)
TLE4998S
SENT Output Definition (SAE J2716)
Data Sheet 36 V 1.0, 2008-07
13.2 Unit Time Setup
The basic SENT protocol unit time granularity is defined as 3 µs. Every timing is a
multiple of this basic time unit. To achieve more flexibility, trimming of the unit time can
be used to:
Allow a calibration trim within a timing error of less than 20% clock error (as given in
SAE standard)
Allow a modification of the unit time for small speed adjustments
This enables a setup of different unit times, even if the internal RC oscillator varies by
±20%. Of course, timing values that are too low could clash with timing requirements of
the application and should therefore be avoided, but in principle it is possible to adjust
the timer unit for a more precise protocol timing.
Table 19 Predivider Setting
The nominal unit time is calculated by:
Parameter Symbol Limit Values Unit Notes
min. max.
Register size Prediv 4bit Predivider1)
1) Useable predivider range is decimal 7 to 15. Prediv < 7 is internally ke pt at 7. Prediv default is decimal = 11 for
3 µs nominal unit time
Unit time tUNIT 2.0 4.0 µs ClkUNIT=8MHz2)
2) RC oscillator frequency variation +/- 20%
t
UNIT
= (Prediv × 2 + 2) / Clk
UNIT
Clk
UNIT
= 8MHz ±20%
TLE4998S
SENT Output Definition (SAE J2716)
Data Sheet 37 V 1.0, 2008-07
Table 20 Content of a SENT Data Frame (8 Nibbles)
11111111 1110 1111 655194094
11111111 1110 1110 65518
11111111 1110 : :
11111111 1110 0000 65504
11111111 1101 1111 655034093
4094
4094
4094
:: : : ::
00000000 0001 0000 161
00000000 0000 1110 14
00000000 0000 : :
00000000 0000 0001 1
00000000 0000 0000 00
0
0
0
00000000 0010 0000 322
00000000 0001 1111 31
00000000 0001 : :
1
1
00000000 0000 1111 150
1111
1111
1111
1111
1111
1111
1111
1111
D1 MSN D1 Mi d N D1 LSN D2 MSN D2 M idN D2 LSN
bits description
state range
status and current range
10
RR
01
00
s t art up c ondition in range R R
ov ervolt age in range RR
normal s t at e us ing range RR
bits description 2
D1 LSN D2MSN
deci m al: OUT
16
( = OUT12* 16+D2MSN )
1111 1111
1111 1110
1111 :
1111 0000
65535 (FSR )
65534
:
65520
D1 MidND1 M SN
description 1
deci m al : OUT
12
( = D1MSN *256 +D1MidN*16+D1LSN )
4095 (FSR )
4095
4095
4095
1110 1111 184 °C
: :
0101 0000
0100 1111 24 ° C
:
25 ° C
: : :
0000 0001 -54 °C
0011 0111 0°C
0011 0110
: :
-1°C
:
0000 0000 -55 °C
bits
D2MidN D2LSN
1111 1111
1111 1110
1111 :
1111 0000
description
dec imal: TEMP
8
( = D2MidN*16+D2LSN )
200 °C
199 °C
:
185 °C
SYNC STATUS
DATA WORD 1 DATA WORD 2
CRC
description
CRC calculation
for all nibbl es on the
basis of SAE J2716
seed v alue: 0101
polynomial: X
4
+X
3
+X
2
+1
bits description
11
01
00
+/- 50mT
+/- 200mT
+/- 100mT
RR
RR
Abbreviations:
SYNC – synchronizati on nibbl e
STATUS – status nibble
CRC – cyclic redundancy code nibble
FSR – full scale range
MSN – most signifi cant nibbl e
MidN – middle nibbl e
LSN – least significant nibble
OUT
12
12 bit output v alue
OUT
16
16 bit output v alue
TEMP
8
8 bit temperature v alue
TLE4998S
SENT Output Definition (SAE J2716)
Data Sheet 38 V 1.0, 2008-07
13.3 Checksum Nibble Details
The Checksum nibble is a 4-bit CRC of the data nibbles including the status nibble. The
CRC is calculated using a polynomial x4 +x3 + x2 + 1 with a seed value of 0101.
In the TLE4998S it is implemented as a series of XOR and shift operations as shown in
the following flowchart:
Figure 14 CRC Calculation
A microcontroller implementation may use an XOR command plus a small 4-bit lookup
table to calculate the CRC for each nibble.
Figure 15 Example Code for CRC Generation
GENERATOR = 1101
SEED = 01 01 , use this
cons t ant as old CRC
value at first call
Pre-initialization:
VALUE
xor SEED
xor only if MSB = 1
VALUE
SEED
0
<<1
GENPOLY
xor
VALUE xor
SEED
4x
CRC c alc u la t io n
Nibble
next Nibble
// Fast way for any µC with low memory and compute capabilities
char Data[8] = {…}; // contains the input data (status nibble , 6 data nibble , CRC)
// required variables and LUT
char CheckSum, i;
char CrcLookup[16] = {0, 13, 7, 10, 14, 3, 9, 4, 1, 12, 6, 11, 15, 2, 8, 5};
CheckSum= 5; // initialize checksum with seed "0101"
for (i=0; i<7; i++) {
CheckSum = CheckSum ^ Data[i];
CheckSum = CrcLookup[CheckSum];
}
; // finally check if Data [7] is equal to CheckSum
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