SILICON EPITAXIAL PLANAR TYPE 1$S300 ULTRA HIGH SPEED SWITCHING APPLICATION. - Small Package - Low Forward Voltage - Fast Reverse Recovery Time : - Small Total Capacitance : SC-70 : VF=0.92V(Typ.) trr=l.6ns(Typ.) CT=2. 2pF(Typ.) Unit in mm 0.2 2.0 0.65 9.65 2.1+0.1 MAXIMUM RATINGS (Ta=25C) ws CHARACTERISTIC SYMBOL RATING UNIT Ss { $3 H Maximum(Peak) Reverse Voltage VRM 85 Vv al 5 | | 3 Ss: t __} Reverse Voltage VR 80 Vv - 2 Maximum(Peak) Forward Current IFM 300% mA Average Forward Current Io 100* mA 1 43 lt. CATHODE Surge Current (10ms) Irsm 2% A 2. CATHODE : 2c 3. ANODE Power Dissipation P 100 mld JEDEC - Junction Temperature Tj 125 C EIAI $C-70 Storage Temperature Tstg -55~125 c TOSHIBA 1-2P1A * Unit Rating. Total Rating=Unit Rating x1.5 Weight : 0.006g ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP MAX UNIT VF(1) IF=1mA - |0.61 - Forward Voltage VF(2) IF=10mA - |0.74 - Vv VF (3) If=100mA ~ |0.92 11.20 Reverse Current TR(1) | VR=30V - 0.1 HA Ir(2) | VR=80v - ~ | 0.5 Total Capacitance cr VR=0, f=1MHz - 4.0 pF Reverse Recovery Time trr If=l0mA, Fig.1 - 1.6 4.0 ns Marking A A 3 H ag 1154 103 Ip (mA) FORWARD CURRENT TOTAL CAPACITANCE Cr (pF) Ip Ve ~ < a mm & is a i=] > Qo a a a > oJ mm FORWARD VOLTAGE Vp (V) Cy VR nN c=4 5 w = a be ro e Q QO tx] o a oe 5 3 10 30 100 ee 0.3 1 REVERSE VOLTAGE Vp (V) Fig. 1 REVERSE RECOVERY TIME (try) TEST CIRCUIT INPUT WAVEFORM INPUT 0.014F DUT -6V 50ns PULSE GENERATOR C Royr = 502) OUTPUT OSCILOSCOPE Rin=500 ) 2kQ 500 500 1155 1$$300 10 1073 60 80 REVERSE VOLTAGE VR (V) trr Ip 3 8 ho 2 win 0.5 0.1 0.3 i 3 10 30 100 FORWARD CURRENT Ip (mA) OUTPUT WAVEFORM 1p=10maf 0 O1 Ip IR