TECHNICAL DATA 2N5415 JAN, JTX, JTXV 2N5416 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/485 PNP SILICON LOW-POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Junction Temperature Range Symbol 2N5415 2N5416 Units VCEO VCBO VEBO IC PT 200 200 300 350 Vdc Vdc Vdc Adc W W 0 C TJ, Tstg 6.0 1.0 0.75 10 -65 to +200 TO- 5 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol 1) Derate linearly 4.28 mW/0C for TA > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C Max. 17.5 RJC Unit C/W 0 ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit ICEO 50 1.0 50 1.0 Adc mAdc Adc mAdc IEBO 20 Adc 2N5415 2N5416 ICEX 50 50 Adc Adc 2N5415 2N5416 ICBO1 50 50 Adc 2N5415 ICBO2 500 500 Adc OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 150 Vdc VCE = 200 Vdc VCE = 250 Vdc VCE = 300 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 200 Vdc, VBE = 1.5 Vdc VCE = 300 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 175 Vdc VCB = 280 Vdc Collector-Base Cutoff Current VCB = 200 Vdc 2N5415 2N5416 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 03/98 REV: E Page 1 of 2 VCB = 350 Vdc 2N5416 2N5415, 2N5416 JAN, SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max. hFE 30 15 120 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Voltage IC = 50 mAdc, VCE = 10 Vdc VCE(sat) 2.0 Vdc VBE 1.5 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz Forward Current Transfer Ratio IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 5.0 Vdc, IC = 0, 100 kHz f 1.0 MHz Forward hfe 3.0 hfe 25 15 Cobo 15 pF Cibo 75 pF t on 1.0 s off 10 s SWITCHING CHARACTERISTICS Turn-On Time VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc Turn-Off Time VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc t SAFE OPERATING AREA DC Tests TC = +250C; 1 Cycle; t = 0.4 s Test 1 VCE = 10 Vdc, IC = 1.0 Adc Test 2 VCE = 100 Vdc, IC = 100 mAdc Test 3 VCE = 200 Vdc, IC = 24 mAdc 2N5415 Test 4 VCE = 300 Vdc, IC = 10 mAdc 2N5416 (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 03/98 REV: E Page 2 of 2