DATA SHEET wig hes MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS (Unit : mm) The 2SK1482 is an N-channel vertical type MOS FET switching 52 MAX. device which can be directly driven from an IC operating with a5 V single power supply. The device featuring low ON-state resistance is of the voltage drive type and thus is ideal for driving actuators such as ; motors, solenoids, and relays. g 12 FEATURES wo ~ | Low ON-state resistance 0.5 x Rps(on) = 0.8 82 MAX. at Vag = 4 V, Ip = O.5A = Rops(on} = 0.4 22 MAX. at Vos =10V, Ip =O5A ai Voltage drive at logic level (Vgg = 4 V) is possible. 4 obs Bidirectional zener diode for protection is incorporated in 127 | between the gate and the source. | x @ Inductive loads can be driven without protective circuit thanks Se to the improved breakdown voltage between the drain and : na source, aa tl @ Can be used complementary with the 2SJ196 1. Gate (G) Drain(D) 2. Drain (D) QUALITY GRADE 3. Source (S) Standard Gate(G) | o7 Please refer to Quality grade on NEC Semiconductor Devices (Document number |El-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended ~ Source(S) applications. (Diode in the figure is the parastic diode.) ABSOLUTE MAXIMUM RATINGS (T, = 25 C) PARAMETER SYMBOL RATINGS UNIT TEST CONDITIONS Drain to Source Voltage Voss 30 v Ves =9 Gate to Source Voltage Voss +20 Vv Vos =9 Drain Current (DC) Ip(oe) 15 A Drain Current (pulse) ID (pulse) 43.0 A PW S 10 ms, Duty Cycle S 50 % Total Power Dissipation Pr 750 mw Channel Temperature Toh 150 c _. Storage Temperature Tstg 55 to +150 c Document No. TC 2344 (0.D.No. TC 7680A) Date Published June 1991 M Printed in Japan NEC Corporation 1991NEC 2SK1482 ELECTRICAL CHARACTERISTICS (T, = 25 C) PARAMETER SYMBOL MIN, TYP, MAX. UNIT TEST CONDITIONS Drain Cut-off Current Ipss 10 pA Vps = 30 V, Veg =0 Gate Leakage Current Igss +10 BA Ves = +20 V, Vps = 0 Gate Cut-off Voltage VGSloff) 13 1.8 2.5 Vv Vps=10V, Ip=1mA Forward Transfer Admittance l fg | 04 s Vps=10V,IDp=90.5A Drain to Source On-State Resistance Rps(on)1 04 0.8 2 Ves=40V, Ip =0.5A Drain to Source On-State Resistance Rpston)2 0.15 0.4 Q Vg@s=10V, Ip =05A Input Capacitance Cigg 230 pF Output Capacitance Coss 170 pF Vps = 10 V, Ves = 0, f= 1 MHz Feedback Capacitance Crsg 45 pF Turn-On Delay Time td(on) 15 ns a VGSlon) = 10 V, RG = 10 2 Rise Time tr 50 ns Vpp =25V, Ip=O0.5A Turn-Off Delay Time td (off) 420 ns Ri = 50 Q Fall Time tf 240 ns SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS RL Gate VGs 90 % Voltage 6 l VGS(on) \ DUT Wave- oO 10% form VbD 90 % R G 'D 920 % PG. Drain | 'D \ g Current 0 Lo 10 % Wave- V@s 1 form o tacon) tr tacoffy 1 tf t | ton toff t=1 ys Duty CycleS1 % TYPICAL CHARACTERISTICS (T, = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 10 100 4 \D(pulse) | x \ . 1 N\Q ) Ss 80 \ 3 eve 3 e . & oO Cc 1 aM u \ S & 2 60 J 6 S & a 0.3 | 40 be 5 Ta=25C N Single pulse 0.1 20 \ 1 3 10 30 100 IN Vps ~ Drain to Source VoltageV 0 20 40 60 80 100 120 140 160 Tc; Case Temperature CTOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.0 = 0.8 5 3 B06 N Ww wn a N o 3 \ a 04 a 3S 7 02 0 30 60 390 120 150 180 Ta Ambient Temperature C TRANSFER CHARACTERISTICS 0 Vps=10Vv Pulse measurement 1 < i < 2 6 01 & 2 a | a 0.01 0.001 1 2 3 4 VGs Gate to Source VoltageV DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE GS 06 Ip=05A 2 Pulse c measurement S a 3 a @ 8 0.4 & 3 a ou 5 o n 02 c s 5 I < 2 no a 0 5 10 #15 20 25 430 35 Vas Gate to Source VoltageV \sl Forward Transfer Admittance S$ RDS(on) ~ Drain to Source On-State Resistance 2SK1482 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 3 = cs i x Pulse ~ measurement <x r sv Vas=3V 1 2 e y/ S | 8 Z Yo a 4 Lf 2a / 0 0.5 1 1.5 Vps 7 Drain to Source Voltage V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 Vos=10V Pulse measurment 0.1 0.01 0.01 0.1 1 10 Ip Drain CurrentA ORAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.8 Pulse measurement 0.6 0.4 0.2 0.1 0.3 1 3 10 Ip Drain CurrentANEC 1000 Ciss:Coss.Crss Capacitance pF Isp Source to Drain Current -A on o ie) o o So oO CAPACITANCE vs. DRAIN TO SOURCE VOLTAE Vas =0 f=1MHz n co nN Oo ~ iy 1 3 10 30 Vps Drain to Source Voltage V SOURCE TO DRAIN DIODE FORWARD VOLTAGE GS= 1.4] Pulse measurement 1.2 1.0 0.8 0.6 0.4 0.2 0 02 04 #06 08 %10 12 14 VSD ~ Source to Drain VoltageV 2SK1482 SWITCHING CHARACTERISTICS 1000 Vpp=25V Vas=10V tac Ww oO oO 100 w Qo td(on).tr.tacoff), tf Switching Time ns 10 0.1 0.3 1 3 10 Ip Drain Current ARECOMMENDED SOLDERING CONDITIONS Solder this product under the following recommended conditions. a For soldering methods or soldering conditions other than those recommended in the table, please consult our NEC salespeople. Insert type Soidering method Soldering conditions Recommended condition code Solder bath temperature: 260 C max. Ideri oe Wave soldering Soldering time: 10 sec max.NEC 2SK1482 (MEMO) No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in the field where very high reliability is required including, but not limited to, aerospace equipment, submarine cables, unclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or those inted to use Standard, r Special quality grade NEC devices for the applications not intended by NEC, please contact our sales people in advance. Application examples recomended by NEC Corporation Standard: Data processing and office equipment, Communication equipment (terminal, mobile). Test and Measurement equipment, Audio and Video equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Communication equipment (trunk line), Train and Traffic control devices, industrial robots, Burning control systems, antidisaster systems, anticrime systems etc.