< High-power GaAs FET (small signal gain stage) > MGF0918A L & S BAND / 0.5W SMD non - matched DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm High power gain Gp=20dB(TYP.) @f=1.9GHz High power added efficiency add=45%(TYP.) @f=1.9GHz,Pin=8dBm Hermetic Package APPLICATION For UHF Band power amplifiers QUALITY Fig.1 GG RECOMMENDED BIAS CONDITIONS Vds=10V Delivery Ids=150mA Rg=1k -01:Tape & Reel(1K), -03:Trai(50pcs) Absolute maximum ratings Symbol (Ta=25C) Ratings Unit -15 V VGDO Gate to drain breakdown voltage -15 V ID Drain current 400 mA IGR Reverse gate current -1.2 mA IGF Forward gate current 5.0 mA PT Total power dissipation 3 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C VGSO Parameter Gate to sourcebreakdown voltage Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Unit Min. Typ. Max. - 300 400 mA -1.0 - -5.0 V IDSS Saturated drain current VDS=3V,VGS=0V VGS(off) gm Gate to source cut-off voltage VDS=3V,ID=1.0mA Transconductance VDS=3V,ID=150mA - 130 - mS Po add Output power Power added Efficiency VDS=10V,ID=150mA,f=1.9GHz Pin=8dBm 25 - 27 35 - dBm % GLP Linear Power Gain VDS=10V,ID=150mA,f=1.9GHz 18 20 - dB NF Noise figure - 1.0 - dB Rth(ch-c) Thermal Resistance - 35 50 C/W *1:Channel to case / *1 Vf Method Above parameters, ratings, limits are subject to change. Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage) > MGF0918A L & S BAND / 0.5W SMD non - matched MGF0918A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 35 30 70 Vds=10V Id(off)=150mA f=1.9GHz 60 Po 25 Po(dBm) 20 40 PAE 15 30 Gp 10 20 5 10 0 -10 Gp(dB),PAE(%) 50 0 -5 0 5 10 15 Pin(dBm) P i(S C L ) v s .P o (S C L ),IM 3 30 30 25 Po(SCL)(dBm) 20 20 Po 10 15 0 10 -10 5 -20 IM 3 0 -30 -5 -40 -1 0 -50 -1 5 -60 -2 0 -70 -20 -1 5 -10 -5 0 5 P in (S C L )( d B m ) Publication Date : Apr., 2011 2 10 15 IM3(dBc) V D = 10 V ID =1 50 m A f 1 = 1 .9 0 G H z f 2 = 1 .9 1 G H z < High-power GaAs FET (small signal gain stage) > MGF0918A L & S BAND / 0.5W SMD non - matched MGF0918A S PARAMETERS freq. (MHz) 600 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200 (Ta=25C,VD=10V,ID=150mA, Reference Plane see Fig.1) S11 (mag) 0.966 0.939 0.919 0.905 0.897 0.892 0.890 0.889 0.888 0.886 0.883 0.877 0.868 0.856 0.840 0.820 0.797 0.771 0.743 0.713 0.674 0.618 0.545 0.485 0.475 0.535 0.640 0.730 0.813 0.876 S21 (ang) -47.70 -72.11 -90.91 -105.49 -116.96 -126.16 -133.71 -140.07 -145.57 -150.45 -154.92 -159.19 -163.52 -168.29 -173.99 177.60 172.89 162.95 154.14 146.69 137.66 123.53 102.00 73.05 39.23 5.13 -23.88 -43.68 -54.21 -63.08 (mag) 6.220 5.269 4.470 3.805 3.257 2.811 2.453 2.168 1.946 1.775 1.647 1.553 1.489 1.448 1.427 1.423 1.433 1.457 1.491 1.536 1.587 1.643 1.699 1.748 1.782 1.788 1.753 1.656 1.473 1.176 (ang) 142.02 120.98 103.95 89.91 78.05 67.78 58.64 50.31 42.56 35.21 28.16 21.31 14.56 7.83 1.01 -6.02 -13.41 -21.33 -29.97 -39.52 -50.18 -62.15 -75.56 -90.54 -107.10 -125.18 -144.56 -164.88 177.63 160.67 S12 (mag) 0.015 0.021 0.024 0.026 0.026 0.025 0.024 0.024 0.023 0.023 0.022 0.023 0.024 0.025 0.027 0.029 0.031 0.035 0.038 0.042 0.047 0.053 0.058 0.064 0.071 0.077 0.082 0.086 0.088 0.087 S22 (ang) 56.75 41.10 27.49 15.71 5.60 -3.00 -10.20 -16.12 -20.89 -24.64 -27.52 -29.72 -31.42 -32.85 -34.23 -35.84 -37.92 -40.74 -44.55 -49.58 -56.03 -64.03 -73.66 -84.89 -97.58 -111.47 -126.11 -140.87 -154.90 -167.09 (mag) 0.302 0.360 0.426 0.492 0.553 0.606 0.651 0.687 0.716 0.738 0.754 0.768 0.779 0.788 0.797 0.806 0.814 0.820 0.824 0.824 0.818 0.806 0.786 0.759 0.723 0.678 0.636 0.609 0.607 0.636 (ang) -56.49 -78.28 -94.16 -105.68 -114.07 -120.27 -125.02 -128.82 -132.05 -134.94 -137.64 -140.24 -142.75 -145.19 -147.53 -149.77 -151.90 -153.92 -155.84 -157.68 -159.47 -161.21 -162.88 -164.44 -165.75 -166.62 -166.73 -165.59 -162.55 -156.74 2.0 Gate Mark Round corner 0.8 0.80 Gate Mark (1) (1) (3) 2.8 1.20 4.20 Reference Plane Reference Plane (2) (2) 0.6 0.25 4.00 2.5 0.3 (1) Gate (2) Drain (3) Source BACK SIDE PATTERN (Unit:mm) Fig.1 OUTLINE DRAWING Publication Date : Apr., 2011 3 K MAG/MSG 0.21 0.29 0.36 0.42 0.49 0.60 0.70 0.76 0.86 0.93 1.07 1.10 1.15 1.20 1.20 1.18 1.21 1.12 1.12 1.13 1.19 1.27 1.40 1.47 1.45 1.38 1.22 1.15 1.14 1.19 (dB) 26.18 24.00 22.70 21.65 20.98 20.51 20.09 19.56 19.27 18.87 17.15 16.35 15.58 14.90 14.51 14.33 13.88 14.06 13.86 13.40 12.62 11.77 10.90 10.32 10.00 10.00 10.44 10.47 9.96 8.65 < High-power GaAs FET (small signal gain stage) > MGF0918A L & S BAND / 0.5W SMD non - matched Keep safety first in your circuit designs! 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