MGF0918A-03 - Mitsubishi Electric & Electronics USA, Inc.

Publication Date : Apr., 2011 1

< High-power GaAs FET (small signal gain stage) >

MGF0918A

L & S BAND / 0.5W

SMD non - matched

DESCRIPTION

The MGF0918A GaAs FET with an N-channel schottky

Gate, is designed for use UHF band am plifiers.

FEATURES

 High output power

Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm

 High power gain

Gp=20dB(TYP.) @f=1.9GHz

 High power added efficiency

add=45%(TYP.) @f=1.9GHz,Pin=8dBm

 Hermetic Package

APPLICATION

 For UHF Band power amplifiers

QUALITY

 GG

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=150mA  Rg=1k

Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGSO Gate to sourcebreakdown voltage -15 V

VGDO Gate to drain breakdown voltage -15 V

ID Drain current 400 mA

IGR Reverse gate current -1.2 mA

IGF Forward gate current 5.0 mA

PT Total power dissipation 3 W

Tch Cannel temperature 175 C

Tstg Storage temperature -65 to +175 C

Electrical characteristics (Ta=25C)

Symbol Parameter Test conditions Limits Unit

Min. Typ. Max.

DSS Saturated drain current VDS=3V,VGS=0V - 300 400 mA

GS(off) Gate to source cut-off voltage VDS=3V,ID=1.0mA -1.0 - -5.0 V

gm Transconductance VDS=3V,ID=150mA - 130 - mS

Po Output power VDS=10V,ID=150mA,f=1.9GHz 25 27 - dBm

add Power added Efficiency Pin=8dBm - 35 - %

LP Linear Power Gain 18 20 - dB

NF Noise figure VDS=10V,ID=150mA,f=1.9GHz - 1.0 - dB

Rth(ch-c) Thermal Resistance *1 Vf Method - 35 50 C/W

*1:Channel to case / Above parameters, ratings, limits are subject to change.

Fig.1

< High-power GaAs FET (small signal gain stage) >

MGF0918A

L & S BAND / 0.5W

SMD non - matched

Publication Date : Apr., 2011

MGF0918A TYPICAL CHARACTERISTICS

Po,Gp,PAE vs.Pin

-10 -5 0 5 10 15

Pin(dBm)

Po(dBm)

Gp(dB),PAE(%)

Vds=10V

Id(off)=150mA

f=1.9GHz

PAE

Pi(SCL ) v s.Po (SCL ),IM 3

-20

-15

-10

-5

-20 -15 -10 -5 0 5 10 15

Pin(SCL)(dBm)

Po(SCL)(dBm)

-70

-60

-50

-40

-30

-20

-10

IM3(dBc)

VD=10V

ID=150mA

f1=1.90GHz

f2=1.91GHz Po

IM3

< High-power GaAs FET (small signal gain stage) >

MGF0918A

L & S BAND / 0.5W

SMD non - matched

Publication Date : Apr., 2011

MGF0918A S PARAMETERS (Ta=25C,VD=10V,ID=150mA, Reference Plane see Fig.1)

freq. KMAG/MSG

(MHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) (dB)

600 0.966 -47.70 6.220 142.02 0.015 56.75 0.302 -56.49 0.21 26.18

1000 0.939 -72.11 5.269 120.98 0.021 41.10 0.360 -78.28 0.29 24.00

1400 0.919 -90.91 4.470 103.95 0.024 27.49 0.426 -94.16 0.36 22.70

1800 0.905 -105.49 3.805 89.91 0.026 15.71 0.492 -105.68 0.42 21.65

2200 0.897 -116.96 3.257 78.05 0.026 5.60 0.553 -114.07 0.49 20.98

2600 0.892 -126.16 2.811 67.78 0.025 -3.00 0.606 -120.27 0.60 20.51

3000 0.890 -133.71 2.453 58.64 0.024 -10.20 0.651 -125.02 0.70 20.09

3400 0.889 -140.07 2.168 50.31 0.024 -16.12 0.687 -128.82 0.76 19.56

3800 0.888 -145.57 1.946 42.56 0.023 -20.89 0.716 -132.05 0.86 19.27

4200 0.886 -150.45 1.775 35.21 0.023 -24.64 0.738 -134.94 0.93 18.87

4600 0.883 -154.92 1.647 28.16 0.022 -27.52 0.754 -137.64 1.07 17.15

5000 0.877 -159.19 1.553 21.31 0.023 -29.72 0.768 -140.24 1.10 16.35

5400 0.868 -163.52 1.489 14.56 0.024 -31.42 0.779 -142.75 1.15 15.58

5800 0.856 -168.29 1.448 7.83 0.025 -32.85 0.788 -145.19 1.20 14.90

6200 0.840 -173.99 1.427 1.01 0.027 -34.23 0.797 -147.53 1.20 14.51

6600 0.820 177.60 1.423 -6.02 0.029 -35.84 0.806 -149.77 1.18 14.33

7000 0.797 172.89 1.433 -13.41 0.031 -37.92 0.814 -151.90 1.21 13.88

7400 0.771 162.95 1.457 -21.33 0.035 -40.74 0.820 -153.92 1.12 14.06

7800 0.743 154.14 1.491 -29.97 0.038 -44.55 0.824 -155.84 1.12 13.86

8200 0.713 146.69 1.536 -39.52 0.042 -49.58 0.824 -157.68 1.13 13.40

8600 0.674 137.66 1.587 -50.18 0.047 -56.03 0.818 -159.47 1.19 12.62

9000 0.618 123.53 1.643 -62.15 0.053 -64.03 0.806 -161.21 1.27 11.77

9400 0.545 102.00 1.699 -75.56 0.058 -73.66 0.786 -162.88 1.40 10.90

9800 0.485 73.05 1.748 -90.54 0.064 -84.89 0.759 -164.44 1.47 10.32

10200 0.475 39.23 1.782 -107.10 0.071 -97.58 0.723 -165.75 1.45 10.00

10600 0.535 5.13 1.788 -125.18 0.077 -111.47 0.678 -166.62 1.38 10.00

11000 0.640 -23.88 1.753 -144.56 0.082 -126.11 0.636 -166.73 1.22 10.44

11400 0.730 -43.68 1.656 -164.88 0.086 -140.87 0.609 -165.59 1.15 10.47

11800 0.813 -54.21 1.473 177.63 0.088 -154.90 0.607 -162.55 1.14 9.96

12200 0.876 -63.08 1.176 160.67 0.087 -167.09 0.636 -156.74 1.19 8.65

S11 S21 S12 S22

Fig. 1 OUTLINE DRAWIN G

0.80

0.25

(1) Gate

(2) Drain

(3) Source

4.00

(2)

0.3

Gate Mark

Round corner (1)

4.20

(2)

BACK SIDE PATTERN

2.5

(Unit:mm)

0.6

2.0

0.8

(1)

(3)

Gate Mark

2.8

1.20

Reference Pl ane

< High-power GaAs FET (small signal gain stage) >

MGF0918A

L & S BAND / 0.5W

SMD non - matched

Publication Date : Apr., 2011

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