Preliminary DM1GL75SH12A Jan. 2010 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 4 High Speed Switching BVCES = 1200V Low Conduction Loss : VCE(sat) = 1.8 V (typ.) Fast & Soft Anti-Parallel FWD Reduced EMI and RFI Isolation Type Package Package : 7DM-1 Series Applications Brake chopper, Switched reluctance motor, DC motor, DC/DC converter Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 1200 V VGES Gate-Emitter Voltage - 20 V IC Collector Current TC = 25 100 A TC = 80 75 A - 150 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current TC = 100 75 A IFM Diode Maximum Forward Current - 150 A PD Maximum Power Dissipation TC = 25 600 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V Mounting screw Torque :M6 - 4.0 N.m Power terminals screw Torque :M5 - 2.0 N.m Note : (1) Repetitive rating : Pulse width limited by max. junction temperature Copyright@Dawin Electronics Corp. All right reserved 1/6 Preliminary DM1GL75SH12A Jan. 2010 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Values Symbol Parameter Conditions BVCES C - E Breakdown Voltage VGE = 0V , IC = 1.0mA BVCES/ Temperature Coeff. of TJ Breakdown Voltage VGE(th) Unit Typ. Max. 1200 - - V VGE = 0V , IC = 1.0mA - 0.6 - V/ G - E threshold voltage IC =2.0mA , VCE = VGE 5 - 8 V ICES Collector cutoff Current VCE = 1200V , VGE = 0V - - 1.0 mA IGES G - E leakage Current VGE =20V - - 200 nA VCE(sat) Collector to Emitter IC=75A, VGE=15V @TC= 25 - 1.8 2.5 V saturation voltage IC=75A, VGE=15V @TC=100 - 2.0 - V Cies Input capacitance VGE = 0V , f = 1 - 5.52 - nF Coes Output capacitance VCE = 25V - 0.40 - nF Cres Reverse transfer capacitance - 0.26 - nF td(on) Turn on delay tim e VCC = 600V , IC = 75A - 150 - nS Turn on rise time VGE = 15V - 65 - nS Turn off delay tim e RG = 15.0 - 440 - nS Turn off fall time Inductive Load, @Tc=25 - 60 - nS tr td(off) tf Min. Eon Turn on Switching Loss - 7.5 - mJ Eoff Turn off Switching Loss - 4.9 - mJ Ets Total Switching Loss - 12.4 - mJ Qg Total Gate Charge VCC = 600V - 780 - nC Qge Gate-Emitter Charge VGE = 15V - 45 - nC Qgc Gate-Collector Charge IC = 75A - 300 - nC Copyright@Dawin Electronics Corp. All right reserved 2/6 Preliminary DM1GL75SH12A Jan. 2010 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF=75A Min. Typ. Max. Tc =25 - 2.3 2.8 Tc =100 - 2.4 - Diode Reverse IF=75A, VR=600V Tc =25 - 80 - Recovery Tim e di/dt= -150A/uS Tc =100 - 100 - Diode Peak Reverse Tc =25 - 30 - Recovery Current Tc =100 - 50 - Diode Reverse Tc =25 - 1200 - Recovery Charge Tc =100 - 2500 - Unit V nS A nC Thermal Characteristics and Weight Values Symbol Parameter Conditions Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.20 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.56 /W RCS Case-to-Sink ( Conductive grease applied) 0.05 - - /W Weight Weight of Module - - 200 g Copyright@Dawin Electronics Corp. All right reserved 3/6 Preliminary DM1GL75SH12A Jan. 2010 Performance Curves 150 Collector Current, IC [A] 175 Common Emitter TC=25 20V 15V 12V Common Emitter TC=125 150 Collector Current, IC [A] 175 125 100 10V 75 50 25 12V 100 10V 75 50 V GE=8V 25 V GE=8V 0 0 2 4 0 6 2 4 6 Collector - Emitter Voltage, VCE(sat) [V] Collector - Emitter Voltage, VCE(sat) [V] Fig 1. Typical Output characteristics Fig 2. Typical Output characteristics 175 80 T C=25 150 70 T C=125 60 125 Load Current [A] Collector Current, IC [A] 15V 125 0 100 75 50 25 50 40 30 20 Duty cycle = 50% TC=125 Power Dissipation = 65W 10 0 0 0 1 2 3 4 0.1 1 Collector - Emitter Voltage, VCE(sat) [V] Common Emitter TC=25 16 12 8 150A 4 75A IC=40A 0 0 4 8 12 16 100 Fig 4. Load Current vs. Frequency Collector - Emitter Voltage, VCE(sat) [V] 20 10 Frequency [KHz] Fig 3. Typical Saturation Voltage characteristics Collector - Emitter Voltage, VCE(sat) [V] 20V 20 20 Common Emitter TC=125 16 12 8 150A 4 75A IC=40A 0 0 Gate - Emitter Voltage, VGE [V] 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. V GE Fig 6. Typical Saturation Voltage vs. V GE Copyright@Dawin Electronics Corp. All right reserved 4/6 Preliminary DM1GL75SH12A Jan. 2010 10 Gate - Emitter Voltage, VGE [V] 15 Capacitance [nF] Cies Coes 1 Cres Common Emitter VGE=0V, f=1MHZ TC=25 0.1 0 5 10 15 20 25 30 Common Emitter VCE=600V, IC=75A TC=25 12 V CC=600V 9 6 3 0 0 35 200 Collector - Emitter Voltage, VCE [V] TJ 150 PD = f(Tc) 600 PD [ W ] Ic [ A ] 750 60 40 20 450 300 150 0 0 0 20 40 60 80 100 120 140 160 0 20 40 Tc [ ] 60 80 100 120 140 160 Tc [ ] Fig 9. rated Current vs. Case Temperature Fig 10. Power Dissipation vs. Case Temperature 1 250 Forward Current, IF [A] Thermal Response Zthjc [/W] 800 Fig 8. Gate Charge characteristics TJ = 150 VGE 15V 80 600 Gate Charge, Qg [nC] Fig 7. Capacitance characteristics 100 400 0.1 0.01 0.001 1.E-05 IGBT : DIODE : TC=25 1.E-04 1.E-03 1.E-02 1.E-01 200 150 T C=25 100 T C=125 50 0 1.E+00 0 Rectangular Pulse Duration Time [sec] 1 2 3 Forward Drop Voltage, VF [V] Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 5/6 4 Preliminary Jan. 2010 Package Out Line Information 7DM-1 Copyright@Dawin Electronics Corp. All right reserved 6/6 DM1GL75SH12A