Copy right@Daw in Electronic s Corp. All right reserv ed
DM1GL75SH12A
Jan. 2010
Preliminary
1/6
Description
DA WIN ’ S I G B T 7DM-1 Package devices are opt imized to reduce losses and
swit ching noise in high frequency power conditioning electrical sy st ems.
These I G BT m odules are ideal ly suit ed f or power inv ert ers, mot ors drives
and ot her applications w here switching losses are signifi cant port ion of t he
t ot a l losses.
Features
☞High Speed Switching
☞BVCES = 1200V
☞Low Conduct ion Loss : V CE(sat) = 1.8 V (typ.)
☞Fast & Soft Ant i-Paral lel FWD
☞Reduced EM I and R FI
☞I solation Ty pe Package
Applications
Brake chopper, Swit ched reluctance motor,
DC motor, DC/DC converter
Absolute Maximu m Ratin g s@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
Equiv alent Circu it
E qu ivalent Circui t and Packag e
Package : 7DM-1 Series
Please see the package out line inf ormat ion
VCES
VGES
IC
ICM (1)
IF
IFM
PD
Tj
Tstg
Viso
C o llec tor-Emitte r V o lta g e
Gat e-Emitt er Volt age
Collect or Current
Pulsed Collector Current
Diode Cont inuous Forward Current
Diode Maximum F orward Current
Maximum P ower D issipation
Operat ing Junction Temperature
St orage Temperature Range
I solation Volt age
Mount ing screw T orque :M6
Power t erminals screw Torque :M 5
1200
±20
100
75
150
75
150
600
-40 ~ 150
-40 ~ 125
2500
4.0
2.0
V
V
A
A
A
A
A
W
℃
℃
V
N.m
N.m
-
-
TC= 25℃
TC= 80℃
-
TC= 100℃
-
TC= 25℃
-
-
AC 1 minut e
-
-
6
7
5
4
①② ③
H igh Po w er SPT+& Rugge d Type IGBT Module
Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
Copy right@Dawin Electronic s Corp. All right reserv ed
DM1GL75SH12A
Jan. 2010
Preliminary
2/6
E l ectr ical Char acteristics o f I G BT @ TC=25℃(unless otherwise specif ied)
Symbol Parameter Values Unit
Conditions Min. Typ. Max.
C - E Breakdown Voltage
Temperat ure Coef f. of
Breakdown Voltage
G - E t hreshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
sat uration v oltage
I nput capacitance
Output capacitance
Reverse transf er capacitance
Turn on delay time
Tu rn o n ris e time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Tot al Switching Loss
Tot al Gat e Charge
Gat e-Emitt er Charge
Gate-Collect or Charge
1200
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.6
-
-
-
1.8
2.0
5.52
0.40
0.26
150
65
440
60
7.5
4.9
12.4
780
45
300
-
-
8
1.0
±200
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V/℃
V
mA
nA
V
V
nF
nF
nF
nS
nS
nS
nS
mJ
mJ
mJ
nC
nC
nC
VGE = 0V , IC= 1 .0m A
VGE = 0V , IC= 1 .0m A
IC=2.0mA , VCE = VGE
VCE = 1200V , VGE = 0V
VGE =±20V
IC=75A, VGE=15V @TC= 25 ℃
IC=75A, VGE=15V @TC=100℃
VGE = 0 V , f = 1 ㎒
VCE = 25V
VCC = 600V , IC= 75A
VGE = ±15V
RG= 15.0Ω
I nduct iv e Load, @ Tc= 25℃
VCC = 600V
VGE =±15V
IC= 75A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off )
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
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DM1GL75SH12A
Jan. 2010
Preliminary
3/6
E l ectr ical Char acteristics o f FRD @ TC=25℃(unless otherwise specif ied )
Symbol Parameter Values UnitConditions Min. Typ. Max.
Diode Forw ard Voltage
Diode Reverse
Recov ery Time
Diode Peak Reverse
Rec over y Cur r e nt
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
Th ermal Char acteristics and Wei g h t
Symbol Parameter Values UnitConditions Min. Typ. Max.
Junct ion-t o-Case(IG B T Part , P er 1/ 2 M odule)
Junct ion-t o-Case(DI O D E Part , Per 1/2 Module)
Case-t o-Sink ( Conduct iv e grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.20
0.56
-
200
-
-
0.05
-
RθJC
RθJC
RθCS
Weight
IF=75A
IF= 75A, VR=600V
di/ dt= -150A/ uS
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
-
-
-
-
-
-
-
-
2.3
2.4
80
100
30
50
1200
2500
2.8
-
-
-
-
-
-
-
V
nS
A
nC
Copy right@Dawin Electronic s Corp. All right reserv ed
DM1GL75SH12A
Jan. 2010
Preliminary
4/6
0
10
20
30
40
50
60
70
80
0.1 1 1 0 100
0
25
50
75
100
125
150
175
02 46
0
4
8
12
16
20
0 4 8 12 16 20
0
4
8
12
16
20
048121620
`
0
25
50
75
10 0
12 5
15 0
17 5
012 34
0
25
50
75
100
125
150
175
024 6
P erfor m an ce Cur ves
10V
C ommon Emitte r
TC=25℃20V 15V
C ommon Emitte r
TC=125℃
TC=125℃
TC=25℃
Duty cycle = 50%
TC=125℃
Power Dissipation = 65W
C ommon Emitte r
TC=25℃
150A
75A
IC=40A
C ommon Emitte r
TC=125℃
150A
75A
IC=40A
10V
12V
VGE=8V
12V15V20V
VGE=8V
Collector – Emitter Voltage, VCE(sat) [V]
Coll e c tor Current, I C[A]
Collector – Emitter Voltage, VCE(sat) [V]
Coll e c tor Current, I C[A]
Collector – Emitter Voltage, VCE(sat) [V]
Coll e c tor Current, I C[A]
Gate – Emitter Voltage, VGE [V]
Collector – Emitter Voltage, VCE(sat) [V]
Collector – Emitter Voltage, VCE(sat) [V]
Gate – Emitter Voltage, VGE [V]
Frequency [KHz]
Load Cu r r ent [A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
Copy right@Dawin Electronic s Corp. All right reserv ed
DM1GL75SH12A
Jan. 2010
Preliminary
0
50
100
150
200
250
01234
0.001
0.01
0.1
1
1.E -05 1.E -04 1.E -03 1.E -02 1.E-01 1.E+00
0.1
1
10
0 5 10 15 20 25 30 35
Collector – Emitter Voltage, VCE [V]
Capaci tance [nF]
C ommon Emitte r
VGE=0V, f =1MHZ
TC=25℃
Cies
Coes
Cres
Gate Charge, Qg [nC]
Gate – Emitter Voltage, VGE [V]
Rectangular Pulse Duration Time [sec]
Therma l Re sponse Zt hjc [ /W ]
℃
IGBT :
DIODE :
TC=25℃
Forward Drop Voltage, VF[V]
F orwa rd Current , IF[A]
5/6
Fig 7. Capacitance characteristics Fig 8. Gate Charge characteristics
Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics
Fig 9. rated Current vs. Case Temperature Fig 10. Power Dissipation
vs. Case Temperature
Tc [ ℃]
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ic [ A ]
TJ= 150℃
VGE ≥15V
Tc [ ℃]
750
600
450
300
150
0
0 20 40 60 80 100 120 140 160
PD[ W ]
TJ≤150℃
PD= f( Tc)
TC=125℃
TC=25℃
0
3
6
9
12
15
0 200 400 600 800
C ommon Emitte r
VCE=600V, IC=75A
TC=25℃
VCC=600V
Copy right@Dawin Electronic s Corp. All right reserv ed
DM1GL75SH12A
Jan. 2010
Preliminary
P ackage Ou t L ine In fo rmatio n
6/6
7DM-1
