44E D MM oooo1eS 0032904 1 MEMILS MIL SPECS The documentation and process conversion INCH-POUND Measures necessary to comply with this revision shall be completed by 45 jun 43 MIL-S-19500/286D SUPERSEDING MIL-5-19500/286C 6 March 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, MEDIUM-RECOVERY TYPES, 1N4245 THROUGH 1N4249 JAN, JANTX AND JANTXV This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. These devices are no longer active for new design, preferred devices are - 1N5614, 1N5616, 1N5618, 1N5620, 1N5622_ on MIL~S-19500/427 1. SCOPE 1.1 Scope. This specification covers the detail requirements for stlicon, power rectifier, medium- recovery diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. In VU In L/ I Types Vp Vewm 0 0 Ig iM A de Ty = 100C 2/ Ts, = 150C 2/ Ty = 150C t, = 8 ms Pp V_dce V_ (pk) Adc mA_dc A (pk) 1N4245 200 200 1.0 333 25 1N4246 400 400 1.0 333 25 1N4247 600 600 1.0 333 25 1N4248 | 800 800 1.0 333 25 1N4249 | 1000 1000 1.0 333 25 T 8 tri T T R ypes arometr ic pressure STG J OJL (reduced) mig 2c SC C/W 1N4245 8 -65 to +175 | -65 to +175 38 1N4246 8 -65 to +175 | -65 to +175 38 1N4247 8 -65 to +175 | -65 to +175 38 1N4248 33 -65 to +175 | -65 to +175 38 1N4249 33 -65 to +175 | -65 to +175 38 py] Ig rating is independent of heat sinking, special mounting, or forced air across the body or leads of the device. 2/ Derate linearly at 13.3 mA/C between T, = +100C and Ty = +175C. Beneficial comments (reconmendations, additions, deletjons) and any pertinent data which may be of use in improving this document should be addressed to: Commander, US Army Research Laboratory, ATTN: AMSRL-EP-RO, Fort Monmouth, NJ 07703-5601 by using the Standardization Document Improvement |_Proposa! (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.MIL SPECS 44E D MM 0000125 0032905 3 MEMNILS MIL-S-19500/2860 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those Listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILLTARY MIL-$-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Standardization Documents Order Desk, Building 4D, 700 Robbins Avenue, Philadelphia, PA 19141-5094. ) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated detail specification. The individual item requirements shall be in accordance with MIL--19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MIL-$-19500. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-S-19500 and on figure 1 herein. No lead (Pb) shall be used in the construction of the die bonds. 3.3.1 Lead material and finish. Lead material shall be solderable as defined in MIL-S-19500, MIL~STD-750, and herein. Where a choice of lead finish 1s desired, 1t shall be specified in the acquisition document (see 6.2). 3.3.2 Diode construction. These devices shall be constructed utilizing noncavity double plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins. 3.4 Marking: Marking shall be in accordance with MIL-S-19500. At the option of the manufacturer, marking of the country of origin may be omitted from the body of the device, but shall be retained on the inital container. 3.4.1 Polarity. Polarity shall be as specified in HIL-$-19500.MIL SPECS 44E D Ml 0000125 0032906 5 MEMILS MIL-S-19500/2860 | | | Dimensions | | | | | | | | { | Inches { Mitlimeters | | | | | | | { ttre | | | | | Notes| | | Min. | Max. | Min.| Max. | | | | | | | | | | | | | { i | | @8 | .027 | .033 | 0.69 | 0.846 | { | | i | \ \ | | | | | | | | i gd | .065 | .150 | 1.65 | 3.81 | 3 | | i | 1 | \ { | | | | | | | G | .140 | .250 | 3.56 [| 6.35 | \ | i { l | { | | | | i | | | Jou | 1.000 | 1.500 {25.40 [38.10 | | | | i | i | | NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only, 3. Ormension OD shall be measured at the Largest diameter. 4. The G dimension shall include all uncontrolled areas of the device leads. FIGURE 1 Physical dimensions.MIL SPECS WHE D Ml 0000125 00325907 7 MEMILS MIL-S-19500/286D 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein. i 4.2 Qualification inspection. Qualification inspection shal} be in accordance with MIL-S-19500. 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table II of MIL-S-19500, and as specified herein. The following measurements shall be made in accordance with table | herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table II Measurement of MIL-S-19500) _JANTX_and_JANTXV 9 Not applicable il Ip and Vp 12 See 4.3.3 13 Subgroup 2 of table I herein. Vey = t.1, -.2 V dc Alp, = 100 percent of initial vatde or #100 nA dc, whichever is greater. 4.3.3 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.1): Types ews Ig Ty Hours AY 1N4245 200 V dc 1 Adc 96 1N4246 400 V dc 1Adc 96 1N4247 600 V dc 1A dc 96 1N4248 800 V de 1 Adc 96 1N4249 1000 _V_dc 1 Adc 96 1/ Ty = Room ambient as defined in the general requirements of paragraph 4.5 of wiL-STD-750. 4.4 Quality conformance inspection. Quality conformance inspection shal) be in accordance with MIL-S-19500. 4.4.1 Group A_inspection. Group A inspection shall be conducted in accordance with MIL-S-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IVb (JANTX, and JANTXV) of MIL-S-19500, and as follows. Electrical measurements (end points) and delta requirements shall be in accordance with the applicable steps of table II herein.MIL SPECS 44E D M@ 0000125 0032908 9 mENILS MIL~S-19500/286D 4.4.2.1 Group B inspection, (table IVb of HIL-5-19500). a. Subgroup 2: Surge current, method 4066, Ipgy = 25 A (pk), 10 surges of 1/120 s each at 1 minute intervals, super-imposed on Ip = 1.6 A dc, Veun = rated (see 1.3); Ty = +100C. b. Subgroup 3: Steady-state operation Life, method 1026, Ip = 1.0 Adc; Ty = 100C #5C; f = 60 Hz; Veun = (see 1.3). c. Subgroup 5: Thermal resistance; method 3101, +25C < Tp +35C , Rot = 38 C/W. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500, and as follows. Electrical measurements Cend points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.3.1 Group C inspection, (table V of MIL-S-19500). . a. Subgroup 2: Terminal strength (lead fatigue), method 2036, test condition E. b. Subgroup 6: Steady-state operation life, method 1026, In = 1.0 A dc, T, = 425C 3C; f = 60 Hz, Veun = (see 1.3). 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Burn-in and steady-state operation life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectified current. The forward conduction angle of the rectified current shall be neither greater than 180, nor less than 150. 4.5.2 Scope display evaluation. The reverse breakdown characteristics shall be viewed on an oscilloscope with display calibration factors of 5 to 20 WA/division and 50 to 200 V/division. Reverse current over the knee shall be at least 50 A. fEach device may exhibit a sharp knee characteristic and any discontinuity or dynamic instability of the trace shall be cause for rejection. 4.5.3 Reverse recovery time. The reverse recovery time shall be measured in the circuit of figure 2 or an equivalent circuit. The recovery conditions shall be 0.5 A forward current to 1.0 A reverse current. The reverse recovery time 1s defined as the time the rectifier begins to conduct in the reverse direction (crosses [ = zero) until the reverse current decays to -0.25 A. The point of contact on the leads shall be no less than .375 (9.52 mm) from the diode body.MIL-S-19500/286D TABLE I. Group A inspection. MIL-STO-750 Inspection 1/ Method Conditions Subgroup 1 Visual and 2071 mechanical inspection Subgroup _2 Forward voltage 4011 1 adc (pulsed) Ie 300 pis; PRR = 60 Hz t Pp OC method; Vp = rated (see 1.3) Reverse current 4016 Breakdown voltage | 4021 I, = 100 pA de | | R | 1NG245 | 1N4246 | 1NG247 | 1N4248 | 1N&269 | | \ | <cccc Subgroup 3 +175C 4 Uy High temperature operation: 4016 Reverse current DC method; Vp = rated (see 1.3) T, = -65C Low temperature A operation: 4011 _ ' Forward voltage = 3.0 A (pulsed) Subgroup 4 Reverse recovery time | | | | | i | | | | | | | | | | | | | | | | | | | ! | | | | | | | | | i | | | i | | i See 4.5.3 and figure 2. | | | | | | | | | | | | | | | | | | | | | | | l | | I | | | | | | ! | | | | | | | | | | | | | | | | | | 1/ For sampling plan, see MIL-S-19500.MIL SPECS U4YE D MH 0000225 0032910 7 MENILS MIL-S-19500/286D TABLE II. Groups A, 8, , and E electrical measurements. 1/ 2/ (see 1.3) T | | | | MIL-STO-750 { Limits | | [Step | Inspection | Symbol } Unite | | i Method Conditions | Min | Max | | | | | i | | | | | | | | 1. | Forward voltage | 4011 Pulse width = 8.3 ms | Veq 0.6 !1.3 | Vde | | | | maximum; Duty | | | | | | cycle = 2 percent | | | | | | | maximum; I, = 3.0 Adc | | | | | | | | | | | | | 2. | Reverse current | 4016 | DC method; V, = rated | Ipaq | | 1.0 | pA de | | | | | | | | | | | | L | | 4/ The electrical measurements for table IVb (JANTX and JANTXV) of MIL-S-19500 are as follows: a. Subgroup 2, table II herein, steps 1 and 2. b. Subgroup 3, table II herein, steps 1 and 2. . Subgroup 6, table II herein, steps 1 and 2. 2/ The electrical measurements for table V of MIL-S-19500 are as follows: a. Subgroup 2, table II herein, steps 1 and 2. b. Subgroup 3, table II herein, steps 1 and 2. c. Subgroup 6, table II herein, steps 1 and 2. 3/ Devices that exceed group A Limits for this test shall be rejected.MIL SPECS 44E D MM OO00L2S 0032912 9 MMNILS MIL-S-19500/286D +O 3 A E -0.25 A per ptiiiiit reef Fe a -L.OA {af SET TIME BASE FOR 14 SEC/CM 0 2 500 10n NI WAH {-1 PULSE GENERATOR (SEE NOTE 1) OSCILLOSCOPE t+} (SEE NOTE 1) || NOTES: 1. Rise time 2. Rise tile A 4A 7 nsec max., input impedance = 1 megohm, 22 pf. 15 nsec max., source impedance = 50 ohm. FIGURE 2. Reverse recovery time characteristic and test circuit diagram.MIL SPECS 44E D @ 0000125 0032912 0 MENILS MIL-S-19500/2860 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation. b. Lead finish as specified (see 3.3.1). c. Product assurance level and type designation. 6.3 Substitution information. JANTX devices are a direct replacement for JAN devices (example: JANTX 1N4245 for JAN 1N4245). Manufacturers can no longer manufacture device types from this specification with a JAN assurance level. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. CONCLUDING MATERIAL Custodians: Preparing activity: Army - ER Army - ER Navy - EC Air Force - 17 Agent: DLA - ES Review activities: Army - AR, MI (Project 5961-1331) Air Force - 19, 85, 99 DLA - ES User activities: Navy - AS, CG, MC, SH Air Force - 15MIL SPECS W4E D Ml O000R25 0032913 2 MENMILS MIL-S-19500/2860 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. ) 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DOOISS to be cited in the solicitation. b. Lead finish as specified (see 3.3.1). c. Product assurance level and type designation. 6.3 Substitution information. JANTX devices are a direct replacement for JAN devices (example: JANTX 1N4245 for JAN 1N4245),. Manufacturers can no longer manufacture device types from this specification with a JAN assurance level. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. CONCLUDING MATERTAL Custodians: Preparing activity: Army - ER Army - ER Navy - EC Air Force - 1? Agent: DLA - ES Review activities: Army - AR, MI (Project 5961-1331) Air Force - 19, 85, 99 OLA - ES User activities: Navy - AS, CG, MC, SH Air Force - 15