3875081 GE SOLID STATE O1 DEP 3875081 OOL7eka 4 T, x29-27 Darlington Power Transistors File Number 609 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at5 A TERMINAL DESIGNATIONS Features: c teLAvee) = Operates from {C without predriver Low leakage at high temperature Applications: @ Power switching = Audio amplifiers 8 eocs- 27516 . . Hammer drivers JEDEC TO-2040A bose @ Series and shunt regulators The 2N6383, 2N6384, and 2N6385 are monolithic n-p-n silicon Darlington transistors designed for low- and medium-frequency power applications. The construction of these devices provides good forward-bias second-break- down capability; their high gain makes it possible for them to be driven directly from integrated circuits. These devices are supplied in the JEDEC TO-204AA steel hermetic package. E 920S-Z06SIRI Formerly RCA Dev. Nos. TA8349, TA8486, and TA8348. Fig.1 ~ Schematic diagram for all types. MAXIMUM RATINGS, Absofute-Maximum Values: 2N6385 2N6384 2N6383 VCBO . 7 we ee ee ee ee 80 60 40 Vv VcER (sus) Rge=1002 .... 2.2.2.2 2.24484. 80 60 40 Vv *Vceolsus). 2. 6. 6 1 ee ee ee 80 60 40 v *VCEX VpE=~1.5V,Rpp= 1002 . 2... 80 60 40 Vv *VEBO 6 6 ee ee ee ee ee 5 5 5 Vv FIG. we ee 10 10 10 A ICM 0 ce 15 15 15 A FIBL 6 ke ee eee ee 0.25 0.25 0,25 A *PT Te S259C 2 2 2 ee 100 100 100 W Te>26C .. 2... kee ee See Fig.2 *Tstg, Ty 65 to +200 -_ C *TL At distances > 1/32 in. (0.8mm) from seating plane for 10smax. . . . . | . __ 235 _-_ * {n accordance with JEDEC registration data format JS-6 RDF-2. 245 0785 6-10 3875081 GE SOLID STATE O1 DEM 38750481 0017244 0 a T3329 Darlington Power Transistors 2N6383, 2N6384, 2N6385 ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) =259C Unless Otherwise Specitied CHARAG TEST CONDITIONS LIMITS " VOLTAGE CURRENT TERISTIC Vdc Ade 2N6385 2N6384 2N6383 | UNITS SYMBOL [Ve] Vesl Veel tc | Ip | MIN.| MAX.[MIN.| MAX. [MIN.| MAX. 80 o| - 1} - |- - *ICEO 60 0 - - - 1 - - 40 oj - - | - - | - 1 80 1.5 - 0.3 _ - = - 60 -1.5 _ - _ 0.3 _ - icEV 40 =15 -| -|-| - |-J] 03 A To= B0 15 T3s])-7,-/-PTr-] 150C 60 1.5 - - - 3 - - 40 -1.5 - - |-| - 3 *IEBO 5 0 = 5 - 5 = 5 mA AVcEQmul a2! o | eo} - | 60} - | 40] 4 VcER(sus) 0.24 80 - = 40 = Vv Ree=t00Q 80 Veevisus) 1.5| 0.28 so | - | 60] - | 40] - 4 hEE 3 5a 1000 | 20,000] 1000 | 20,000 j 1000 | 20,000 3 10a 100 - 100 - 100 - 3 5a ~_ 2.8 - 2.8 - 2.8 *|VBE 3 10a ~|a5|- | 45 | - | 45] 5a [0.014] - 2 - 2 - 2 *TVcel(sat) 102} 0.12] a | - 3} - 3 Vv VF -10 - 4 = 4 - 4 *lhfe f=1kHz 5 1 1000 |1000 _ 1000 _ *tlhtel : f=1MHz 5 1 20 - 20 - 20 - : *1C., obo VcB igo} | 200 | | 200 | - | 200 | pF =1MHz | = 10 IS/b 75 022} - ~ _ _ t=1s, 55 - - 0.55 - - - A non rep. 36 3.33 - 3,33 - 3.33 - RaJc [175 | [| 1.76 | - | 1.75 | c @ Pulsed: Pulse duration = 300 ys, duty factor = 1.8%. * In accordance with JEDEC registration data format JS-6 ROF-2. OTE CURRENT DERATING AT CONSTANT aa e TAGE APPLIES QHLY TO THE DISS PATION- + ia LATED FoRTiON AND THE Igy_ LIMITED EEE Hy | BAreraren. acs PEEPS gz 8 fo t ~ ie TERT E gp No cEETHT Et Se z Seg : HE g 2 Sc ro i if SOS OS BOS BOO CASE TEMPERATURE (Tcl*C OF " coLLEsToh CURRENT (tcl=A vueumen #2CS- 20695 . Fig.2 Derating curves for all types. Fig. 3 Typical dc-beta characteristics for ail types. 0786 G-11 3875081 G E SOLID STATE OL DEB 3875081 aobecs t I T3329 Tew Darlington Power Transistors 2N6383, 2N6384, 2N6385 (MAX.) PULSEO: PULSE EEE PT COLLECTOR CURRENT (i)A t =40 (2N6383) v 2 0 100 COLLECTOR-TO-EMITTER VOLTAGE (ce1-V 920S-20692R2 t Fig.4 Maximum operating area for all types. PULSE OPERATION *FOR SINGLE NONREPETITIVE COLLECTOR CURRENT (Tc) =A (MAX.1=40V (2N6383) (MAX.) GON (2N6385) t 10 100 COLLECTOR TO-EMITTER VOLTAGE (Vc) V SLCS- 20585 Fig.6 Maximum operating area for all types. 247 0787 6-12 3875081 G E SOLID STATE O1 DE fj 3875081 O01724b 3 LL. ceew Mo 1733-29 Darlington Power Transistors 2N6383, 2N6384, 2N6385 CURRENT tA VOLTAGE {Vcel*S TEMPERATURE (To le25ec ? & z 5 5 6 @ E 5 2 2 Z z 8 3 4 z = & om Ol vn FREQUENCY (1] MHz sees-19919 Fig. 6 Typical small-signal gain for all types. COLLECTOR CURRERT (I)A 920$-1992081 Fig. 8 Typical saturated switching-time characteristics for all types. COLLECTOR-TO-EMITTER VOLTAGE (Vce)* E =z is c < > 6 o e o a s a 3 a BASE-TO-EMITTER VOLTAGE (VYp}V 92cs-19974RI Fig. 10 Typical transter characteristics for all types. COLLECTOR CURRENT (Z)A COLLECTOR CURRENT (Ic)-A COLLECTOR-TO-EMITTER SATURATION VOLTAGE [vce tsat!]V 9205-20056 Fig. 7 Typical saturation characteristics for all types. COLLECTOR-TQ-EMITTER VOLTAGE (VCE)* 3 BASE-TO-EMITTER VOLTAGE (Vge)V 9205-19923 Fig. 9 Typical input characteristics for all types. COLLECTOR-TO-EMITTER VOLTADE [Vce}-V a2tg-19925 Fig, 11 Typical output characteristics for all types. 248 _ 0788 G-13 3875081 GE SOLID STATE Q1 DE fp 3875081 OOPe4? 5 Voo*20 OUTFUT TO frextRenix MODEL Roe ie, a 2-200 Of EQUIVALENT) CHRONETICS PULSE =," GENERATOR t Ho. PG-31, OR I EQUIVALENT 62 2N6363 2N6364 PULSE DURATION Pg 200 Ro 20 ps POSITIVE VOLTAGE 20 s NEGATIVE VOLTAGE REP, HATE 9200 Hz * Ta, ANO Tag ANE MEASURED WITH TEKTRONIX CURRENT PROBE P@OI9 AND TYPE 134 AMPLIFIER, OR EQUIVALENT $2c5-19921F1 Fig. 12 Circuit used to measure saturated- switching-times. 2N6383, 2N6384, 2N6385 SASE CURRENT == SSIS, - 20% a THE 1 / 82 PUT WAVE FORM fi xe toe yee THE TURNOH Tie t OUTPUT WAVE FORM sacs-mesent Fig. 13 Phase relationship between input current and output current showing reference points for specification of switching- times (test circuit shown in Fig. 14). 0789 6-14 | 7 3327 vartungton Power Transistors