Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead (Pb) Free Product - RoHS Compliant BP 104 S, BP 104 SR BP 104 SR BP 104 S Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm * Kurze Schaltzeit (typ. 20 ns) * Geeignet fur Reflow-Loten * SMT-fahig * Especially suitable for applications from 400 nm to 1100 nm * Short switching time (typ. 20 ns) * Suitable for reflow soldering * Suitable for SMT Anwendungen Applications * * * * * * * * Lichtschranken IR-Fernsteuerungen Industrieelektronik Messen/Steuern/Regeln" Photointerrupters IR remote controls Industrial electronics For control and drive circuits Typ Type Bestellnummer Ordering Code Fotostrom, Ev=1000 lx, standard light A, VR = 5 V Photocurrent Ip (A) BP 104 S Q65110A2626 55 (40) BP 104 SR Q65110A4262 55 (40) 2007-04-18 1 BP 104 S, BP 104 SR Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotostrom VR = 5 V Photocurrent IP 55 (40) nA/lx Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 400 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 4.84 mm2 Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Lx B 2.20 x 2.20 mm x mm Lx W Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (30) nA Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity S 0.62 A/W Quantenausbeute, = 850 nm Quantum yield 0.90 Electrons Photon Leerlaufspannung, EV = 1000 lx Open-circuit voltage VO 360 ( 280) mV 2007-04-18 2 BP 104 S, BP 104 SR Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kurzschlussstrom, EV = 1000 lx Short-circuit current ISC 50 A Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr , tf 20 ns Durchlassspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 48 pF Temperaturkoeffizient von VO Temperature coefficient of VO TKV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TKI 0.18 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm NEP 3.6 x 10- 14 Nachweisgrenze, VR = 10 V, = 850 nm Detection limit D* 6.1 x 1012 2007-04-18 3 W -----------Hz cm x Hz --------------------------W BP 104 S, BP 104 SR Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Relative Spectral Sensitivity Srel = f () OHF00078 100 S rel % P OHF02283 10 3 A 10 4 mV VO Total Power Dissipation Ptot = f (TA) OHF00958 160 mW Ptot 140 80 10 2 10 3 VO 60 100 P 10 1 120 10 2 80 40 60 10 0 20 10 1 40 20 0 400 500 600 700 800 900 nm 1100 10 -1 10 0 10 1 10 0 10 3 lx 10 4 EV 10 2 0 0 20 40 60 80 C 100 TA Dark Current Capacitance Dark Current IR = f (VR), E = 0 C = f (VR), f = 1 MHz, E = 0 IR = f (TA), VR = 10 V, E = 0 OHF02284 10 2 OHF01778 60 nA C R OHF00082 10 3 R nA pF 50 10 2 10 1 40 10 1 30 10 0 20 10 0 10 10 -1 0 2 4 6 0 -2 10 8 10 12 14 16 V 20 10 -1 10 0 10 1 V 10 2 VR VR Birectional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2007-04-18 0.8 0.6 0.4 0 20 40 60 80 4 100 120 10 -1 0 20 40 60 80 C 100 TA BP 104 S, BP 104 SR Mazeichnung Package Outlines Chip position 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0...5 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) 0.3 (0.012) BP 104 S 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.6 (0.063) 0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) Chip position 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0...5 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) BP 104 SR 0.3 (0.012) GEOY6861 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.6 (0.063) 0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GPLY7049 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-18 5 BP 104 S, BP 104 SR Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020C) (acc. to J-STD-020C) OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C 255 C 240 C T 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-18 6