BP 104 S, BP 104 SR
Silizium-PIN-Fotodiode
Silicon PIN Photodiode
Lead (Pb) Free Product - RoHS Compliant
BP 104 SR
B
P 104 S
2007-04-18 1
Wesentliche Merkmale
Speziell geeignet für Anwendunge n im Bereich
von 400 nm bis 1100 nm
Kurze Schaltzeit (typ. 20 ns)
Geeignet für Reflow-Löten
•SMT-fähig
Anwendungen
Lichtschranken
IR-Fernsteuerungen
Industrieelektronik
„Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Fotostrom, Ev=1000 lx, standard light A, VR = 5 V
Photocurrent
Ip (µA)
BP 104 S Q65110A2626 55 (40)
BP 104 SR Q65110A4262 55 (40)
Features
Especially suitable for applications from
400 nm to 1100 nm
Short switching time (typ. 20 ns)
Suitable for reflow soldering
Suitable for SMT
Applications
Photointerrupters
IR remote controls
Industrial electronics
For control and drive circuits
2007-04-18 2
BP 104 S, BP 104 SR
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg –40…+100 °C
Sperrspannung
Reverse voltage VR20 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom VR = 5 V
Photocurrent IP55 (40) nA/lx
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sen s itivity
S = 10% of Smax
λ400 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A4.84 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
L×W
2.20 ×2.20 mm ×mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 ( 30) nA
Spektrale Fotoempfindlichkeit, λ=850nm
Spectr al sensitivity Sλ0.62 A/W
Quantenausbeute, λ=850nm
Quantum yield η0.90 Electrons
Photon
Leerlaufspannung, EV=1000lx
Open-circuit voltage VO360 ( 280) mV
BP 104 S, BP 104 SR
2007-04-18 3
Kurzschlussstrom, EV= 1000 lx
Short-circuit current ISC 50 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr, tf20 ns
Durchlassspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C048 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TKV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TKI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
NEP 3.6 ×10–14
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit D* 6.1 ×1012
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
---------------------------
BP 104 S, BP 104 SR
2007-04-18 4
Relative Spectral Sensitivity
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Birectional Characteristics
Srel = f (ϕ)
λ
OHF00078
0
rel
S
400
20
40
60
80
%
100
500 600 700 800 900 nm 1100
OHF02284
V
R
Ι
R
0
10
-1
10
0
10
1
10
2
nA
2 4 6 8 10 12 14 16 V 20
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)
Capacitance
C = f (VR), f = 1 MHz, E = 0
lx
3
10
O
V
P
Ι
mVA
µ
O
V
0
10
10
1
10
2
10
3
10
43
10
2
10
1
10
0
10
4
10
2
10
1
10
10
-1
Ι
P
10
0
V
OHF02283
E
V
OHF01778
R
-2
10
C
10
-1
10
0
10
1
10
2
V
0
10
20
30
40
50
pF
60
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
BP 104 S, BP 104 SR
2007-04-18 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
BP 104 S
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6861
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
Chip position
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.20 (0.087) x 2.20 (0.087)
1.6 (0.063)
(0...0.004)
±0.2 (0.008)
0...0.1
BP 104 SR
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GPLY7049
2.20 (0.087) x 2.20 (0.087)
1.6 (0.063)
±0.2 (0.008)
Chip position
6.2 (0.244)
6.7 (0.264)
1.1 (0.043)
1.2 (0.047)
0...0.1
(0...0.004)
0.3 (0.012)
0.9 (0.035)
0.2 (0.008)
0...5˚
0.1 (0.004)
1.1 (0.043)
2007-04-18 6
BP 104 S, BP 104 SR
Lötbedingungen Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
Attention please! The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may
contain dangerous substances. For information on the types in question please contact our Sales
Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be im planted in the human body, or (b) to sup port and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min