G9820 series is a family of high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These
devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated with a high-speed preamp, allowing easy
connection to a latter-stage circuit. Lens window types are also available for efficient and easy coupling to an optical fiber.
Features
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High-speed response
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High gain with AGC (Auto Gain Control)
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Low power supply voltage: 3.3 V
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Differential output
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Sensitivity: -25.5 to +1 dBm
Applications
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Optical fiber communications
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Fiber channel
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Gigabit Ethernet
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SDH/SONET (STM-16/OC-48)
PHOTODIODE
InGaAs PIN photodiode with preamp
TO-46 package, 1.3/1.55 µm, 2.5 Gbps
G9820 series
■ Absolute maximum ratings
Parameter Symbol Value Unit
Supply voltage Vcc -0.5, +5.0 V
Operation temperature *1Topr -40 to +85 °C
Storage temperature *1Tstg -40 to +85 °C
*1: No condensation
■ Electrical and optical characteristics
(Ta=25 °C, Vcc=3.3 V, Vee=0 V, RL=50 Ω *2, λ=1.31 µm, unless otherwise noted)
Parameter Symbol Condition Min. Typ. Max. Unit
Photo sensitivity S Pin= -22 dBm *2, *31.0 1.5 - V/mW
Supply current Icc Dark state, RL=∞-45 60 mA
Output bias voltage Vo Dark state, RL=∞-3.0- V
Cut-off frequency fc Pin= -22 dBm, -3 dB *21.7 2.1 -GHz
Low cut-off frequency fc-L Pin= -22 dBm, -3 dB - 3.0 - kHz
Noise equivalent power NEP Dark state, to 1875 MHz, *2, *3-310 500 nWrms
Minimum receivable
sensitivity Pmin - -25.5 -23.5
Maximum receivable
sensitivity Pmax
2.5 Gbps, PRBS=223-1
BER=10-10
Extinction ratio=10 dB +1 - -
dBm
Output impedance Rout 40 50 60 Ω
*2: Output: capacitive coupling
*3: Single-ended (Vout+) measurement
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InGaAs PIN photodiode with preamp G9820 series
■ Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2)
KGPDA0026EA
G9820
KGPDA0027EA
G9820-02
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However , no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
Cat. No. KIRD1080E02
Oct. 2007 DN
2
Vout +
Vcc
Vout -
Vee (CASE)
(13)
1.65
2.7
(4 ×) 0.45 ± 0.1
LEAD
4.7
5.4
PHOTOSENSITIVE
SURFACE
WINDOW
3.0
2.54 ± 0.25
(1.0)
(45˚)
(1.0)
(13) 0.65 ± 0.15
3.8
(4 ×) 0.45 ± 0.1
LEAD
4.65 ± 0.1
5.4
LENS ( 1.5)
Vout +
Vcc
Vout -
Vee (CASE)
2.54 ± 0.25
(1.0)
(45˚)
(1.0)
