Rev 1:Nov 2004 AO3419, AO3419L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO3419L ( Green Product ) is offered in a lead-free package. VDS (V) = -20V ID = -3.5 A RDS(ON) < 75m (VGS = -10V) RDS(ON) < 95m (VGS = -4.5V) RDS(ON) < 145m (VGS = -2.5V) ESD Rating: 2000V HBM D TO-236 (SOT-23) Top View G G D S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 12 V -15 1.4 W 0.9 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A -2.8 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -3.5 TA=25C Power Dissipation A Maximum -20 RJA RJL Typ 65 85 43 Max 90 125 60 Units C/W C/W C/W AO3419, AO3419L Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V -20 IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.7 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 TJ=55C -2.5 1 A VDS=0V, VGS=12V 10 A -0.9 -1.4 V 59 75 83 105 VGS=-4.5V, ID=-3A 76 95 m VGS=-2.5V, ID=-1A 111 145 m -0.95 V -2 A 620 pF TJ=125C gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-3.5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VDS=0V, VGS=10V VGS=-10V, ID=-3.5A IS Units -0.5 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-16V, VGS=0V IDSS RDS(ON) Typ A 6.8 -0.65 -0.81 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3.5A m S 77 pF 62 pF 9.2 13 5.5 6.6 nC 0.8 nC Qgd Gate Drain Charge 1.9 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time 6.7 ns 28 ns 13.5 ns VGS=-10V, VDS=-10V, RL=2.8, RGEN=3 tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-3.5A, dI/dt=100A/s 9.8 Qrr Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/s 2.7 12 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3419, AO3419L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 25 -9.0V -10.0V VDS=-5V -8.0V 20 -5.0V -4.0V -6.0V 6 15 -ID(A) -ID (A) 8 -7.0V -3.0V 10 -2.5V -2.0V 5 2 VGS=-1.5V 0 0 1 2 3 125C 4 4 25C 0 5 0 0.5 160 1.5 2 2.5 3 3.5 1.6 ID=-3A, VGS=-4.5V 140 Normalized On-Resistance VGS=-2.5V 120 RDS(ON) (m) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 100 VGS=-4.5V 80 60 VGS=-10V 40 ID=-3.5A, VGS=-10V 1.4 1.2 ID=-1A, VGS=-2.5V 1.0 20 0 2 4 6 8 0.8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 200 1E+01 ID=-3.5A 180 1E+00 160 125C 1E-01 125C 140 -IS (A) RDS(ON) (m) 25 120 25C 1E-02 1E-03 100 1E-04 80 25C 1E-05 60 1E-06 40 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3419, AO3419L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 ID=-3.5A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 200 Coss Crss 0 0 1 2 3 4 5 0 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 TJ(Max)=150C TA=25C 40 100s 1.0 10ms 1s 10s 20 10 0.1s DC 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) ZJA Normalized Transient Thermal Resistance 20 30 1ms 10 15 TJ(Max)=150C TA=25C 10s RDS(ON) limited 0.1 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000