FEATURES
*
Epitaxial planar die construction
*
As complementary type,the NPN transistor
MMBT3904 is Recommended
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT3906
2007-5
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
Notes :
CHARACTERISTICS SYMBOL UNITS
417
oC/WThermal Resistance Junction to Ambient
RATINGS
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
RqJA
VALUE
MAX.
-
TYP.
-
MIN.
UNITS
mW300
150
-55 to +150
oC
oC
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
1.Alumina=0.4*0.3*0.024in.99.5% alumina.
2."Fully ROHS Compliant", "100% Sn plating(Pb-free)".
Dimensions in inches and (millimeters)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
1
3
BASE
EMITTER
COLLECTOR
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS(1)
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (2) (IC= -1.0 mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= -100uAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= -100uAdc, IC= 0)
Base Cutoff Current (VCE= -30Vdc, VEB= -3.0Vdc)
Collector Cutoff Current (VCE= -30Vdc, VEB= -3.0Vdc)
DC Current Gain (IC= -0.1mAdc, VCE= -1.0Vdc)
Collector-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc)
(IC= -1.0mAdc, VCE= -1.0Vdc)
(IC= -10mAdc, VCE= -1.0Vdc)
(IC= -50mAdc, VCE= -1.0Vdc)
(IC= -100mAdc, VCE= -1.0Vdc)
V(BR)CEO -40 - Vdc
V(BR)CBO -40 - Vdc
V(BR)EBO -5.0 - Vdc
IBL
ICEX
- -50
- -50
nAdc
nAdc
Vdc
fT250 - MHz
hFE
60
300 -
30
80
100
60
-
-
-
-
VCE(sat)
--0.25
- -0.4
Symbol Min Max Unit
(IC= -50mAdc, IB= -5.0mAdc)
Base-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc)
Current-Gain-Bandwidth Product (IC= -10mAdc, VCE= -20Vdc, f= 100MHz)
Cobo
Cibo
- 4.5 pF
pF
td
tr
ts
tf
NF
-
-
-
-
ns
dB
ns
hie
- 10
2.0 12 k
W
hre 0.1 10
100 400
X 10-
4
hfe
3.0 60
-4.0
-
hoe
225
75
35
35
umhos
Output Capacitance (VCB= -5.0Vdc, IE= 0, f= 1.0MHz)
Input Capacitance (VEB= -0.5Vdc, IC= 0, f= 1.0MHz)
Voltage Feedback Ratio (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Output Admittance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
(VCC= -3.0Vdc, VBE= 0.5Vdc, IC= -10mAdc, IB1= -1.0mAdc)
(VCC= -3.0Vdc, IC= -10mAdc, IB1= IB2= -1.0mAdc)
Input lmpedance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (VCE= -10Vdc, IC= -10mAdc, f= 1.0kHz)
Noise Figure (VCE= -5.0Vdc, IC= -100uAdc, RS= 1.0k
W
, f= 1.0kHz)
Vdc
VBE(sat)
-0.65 -0.85
--0.95
(IC= -50mAdc, IB= -5.0mAdc)
Delay Time
Rise Time
Storage Time
Fall Time
Note : Pulse Test: Pulse Width<300ms,Duty Cycle<2.0%
--
RATING AND CHARACTERISTICS CURVES ( MMBT3906 )
Figure 1 Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
Cibo
Figure 2 Charge Data
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
5000
1.0
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
QT
QA
Figure 3 Turn-On Time Figure 4 Fall Time
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
t f,FALL TIME (ns)
40 V
15 V
2.0 V
Figure 5
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 6
Rg, SOURCE RESIST ANCE (KOHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC= 1.0 mA
IC= 0.5 mA
SOURCE RESIST ANCE=200
W
SOURCE RESIST ANCE=200
W
SOURCE RESIST ANCE=2.0k
SOURCE RESISTANCE=2.0k
IC= 50
u
A
IC= 100
u
A
IC= 1.0 mA
IC= 0.5 mA
IC= 50
u
A
IC= 100
u
A
VCC= 40 V
IC
/
IB= 10
VCC= 40 V
IB1 = IB2
IC
/
IB= 20
IC
/
IB= 10
IC
/
IB= 10
tr @ VCC=3.0V
Cobo
td @ VOB=0V
RATING AND CHARACTERISTICS CURVES ( MMBT3906 )
70
100
200
300
50
300.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.00.7 7.0
2.0
5.0
10
20
1.0
0.2
0.5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.00.7 7.0
7.0
3.0
0.7
0.3
hoe, OUTPUT ADMITTANCE (umhos)
hre, VOLTAGE FEEDBACK RATIO(x10-4)
QV, TEMPERATURE COEFFICIENTS (mV/oC)
hfe, DCCURRENT GAINhie, INPUT IMPEDANCE (KOHMS)V,VOLTAGE (V)
100
50
10
20
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
7
5
70
30
0.7 7.0
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5 10
0.3 0.5 3.0
0.7
0.7 7.0
0.4
0.6
0.8
1.0
0.2
1.0 2.0 5.0 10 20 50
0100 200
± 0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
± 1.0
± 1.5
± 2.0
q
VBFOR VBE(sat)
q
VCFOR VCE(sat)
+25
O
C TO +125
O
C
+25
O
C TO +125
O
C
-55
O
C TO +25
O
C
-55
O
C TO +25
O
C
VCE(sat)@IC/IB=10
VBE(sat)@IC/IB=10
VBE@VCE=1.0V
TJ= 25
O
C
Figure 11 "ON" Voltages Figure 12 Temperature Coefficients
Figure 10 Voltage Feedback RatioFigure 9 Input lmpedance
Figure 8 Output AdmittanceFigure 7 Current Gain
IC,COLLECTOR CURRENT(mA)
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
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