Supertex inc.
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
VP0106
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►High input impedance and high gain
►Excellent thermal stability
►Integral source-to-drain diode
Applications
►Motor controls
►Converters
►Ampliers
►Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex VP0106 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefcient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Pin Conguration
P-Channel Enhancement-Mode
Vertical DMOS FETs
GATE
SOURCE
DRAIN
Product Marking
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVP
0106
YYWW
TO-92 (N3)
TO-92 (N3)
Package may or may not include the following marks: Si or
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
Ordering Information
Device
Package Wafer / Die Options
TO-92 NW
(Die in wafer form)
NJ
(Die on adhesive tape)
ND
(Die in wafe pack)
VP0106 VP0106N3-G VP1506NW VP1506NJ VP1506ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specication VF15 for layout and dimensions.
Product Summary
Device BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
ID(ON)
(min)
(mA)
VP0106N3-G -60 8.0 -500
2
VP0106
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Electrical Characteristics (TA = 25°C unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -1.0mA
VGS(th) Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID = -1.0mA
ΔVGS(th) Change in VGS(th) with temperature - 5.8 6.5 mV/OC VGS = VDS, ID = -1.0mA
IGSS Gate body leakage current - -1.0 -100 nA VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
- - -10 µA VGS = 0V, VDS = Max Rating
- - -1.0 mA VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON) On-state drain current -0.15 -0.25 - AVGS = -5.0V, VDS = -25V
-0.5 -1.2 - VGS = -10V, VDS = -25V
RDS(ON)
Static drain-to-source
on-state resistance
-11 15 ΩVGS = -5.0V, ID = -100mA
- 6.0 8.0 VGS = -10V, ID = -500mA
ΔRDS(ON) Change in RDS(ON) with temperature - 0.55 1.0 %/OC VGS = -10V, ID = -500mA
GFS Forward transconductance 150 190 - mmho VDS = -25V, ID = -500mA
CISS Input capacitance - 45 60
pF
VGS = 0V,
VDS = -25V,
f = 1.0MHz
COSS Common source output capacitance - 22 30
CRSS Reverse transfer capacitance - 3.0 8.0
td(ON) Turn-on delay time - 4.0 6.0
ns
VDD = -25V,
ID = -500mA,
RGEN = 25Ω
trRise time - 3.0 10
td(OFF) Turn-off delay time - 8.0 12
tfFall time - 4.0 10
VSD Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -1.0A
trr Reverse recovery time - 400 - ns VGS = 0V, ISD = -1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
ID
(continuous)†
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TC = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
†
(mA)
IDRM
(mA)
TO-92 -250 -800 1.0 125 170 -250 -800
Notes:
† ID (continuous) is limited by max rated Tj .
90%
10%
90% 90%
10%
10%
Pulse
Generator
V
DD
R
L
Output
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tf
tr INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
3
VP0106
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves
Output Characteristics
ID (amperes)
0 -10 -20 -30 -40 -50
-2.0
-1.6
-1.2
-0.8
-0.4
0
VDS (volts)
Saturation Characteristics
-1.0
-0.8
-0.6
-0.4
-0.2
0
0 -2 -4 -6 -8 -10
ID (amperes)
VDS (volts)
Transconductance vs. Drain Current
0 -0.2 -0.4 -0.6 -0.8 -1.0
ID (amperes)
GFS (millisiemens)
250
200
150
100
50
0
TA = 125OC
TA = 25OC
TA = -55OC
VDS = -25V
0 25 50 75 100 125 150
Power Dissipation vs. Case Temperature
2.0
1.0
0
TO-92
PD (watts)
TC (OC)
Maximum Rated Safe Operating Area
ID (amperes)
-0.1 -1.0 -10 -100
VDS (volts)
-10
-1.0
-0.1
-0.01
TO-92 (DC)
TC = 25OC
Thermal Response Characteristics
0.001 0.01 0.1 1.0 10
1.0
0.8
0.6
0.4
0.2
0
TO-92
PD = 1W
TC = 25OC
tP (seconds)
Thermal Resistance (normalized)
VGS = -10V
-8V
-4V
-6V
-5V
-7V
-9V
VGS = -10V
-8V
-4V
-6V
-5V
-7V
-9V
4
VP0106
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
BVDSS (normalized)
1.10
1.06
1.02
0.98
0.94
0.90-50 0 50 100 150
Tj (OC)
Transfer Characteristics
On-Resistance vs. Drain Current
RDS(ON) (ohms)
50
40
30
20
10
0
ID (amperes)
0 -0.3 -0.6 -0.9 -1.2 -1.5
VGS = -5.0V
VGS = -10V
-1.0
-0.8
-0.6
-0.4
-0.2
0
0 -2 -4 -6 -8 -10
VGS (volts)
VDS = -25V
TA = -55OC
TA = 25OC
TA = 125OC
VDS = -10V
VDS = -40V
70pf
70pf
-50 0 50 100 150
-1.6
-1.4
-1.2
-1.0
-0.8
0.6
V(th) and RDS Variation with Temperature
Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics
VDS (volts)
0 -10 -20 -30 -40
-10
-8
-6
-4
-2
0
VGS(th) (normalized)
VGS (volts)
C (picofarads)
100
75
50
25
0
f = 1MHz
CISS
COSS
CRSS
-1.6
-1.4
-1.2
-1.0
-0.8
RDS(ON) (normalized)
RDS(ON) @ 10V, -0.5A
RDS(ON) @ -5V, -0.1A
V(th) @ -1.0mA
0 0.2 0.4 0.6 0.8 1.0
QG (nanocoulombs)
45pf
Tj (OC)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA
94089
Tel: 408-222-8888
www
.supertex.com
5
VP0106
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VP0106
B061311
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014†.014†.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specied in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating
Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A