VVZB120-16ioX 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 180 A I C25 I FSM = 700 A VCE(sat) = 2.05 V = 155 A 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part number VVZB120-16ioX O1 Backside: isolated S1 E1 I1 M1 W1 L7 G7 C7 O10 W10 Features / Advantages: Applications: Package: V2-Pack Package with DCB ceramic base plate Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130604c VVZB120-16ioX Ratings Rectifier Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1700 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 V I R/D reverse current, drain current VR/D = 1600 V TVJ = 25C 50 A VR/D = 1600 V TVJ = 150C 20 mA TVJ = 25C 1.27 V 1.90 V 1.25 V VT IT = forward voltage drop min. 60 A typ. I T = 180 A IT = TVJ = 125 C 60 A I T = 180 A TC = 85C I DAV bridge output current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing V 180 A TVJ = 150 C 0.83 V d= for power loss calculation only Ptot 2.04 T VJ = 150 C 0.10 W t = 10 ms; (50 Hz), sine TVJ = 45C 700 A t = 8,3 ms; (60 Hz), sine VR = 0 V 755 A t = 10 ms; (50 Hz), sine TVJ = 150 C 595 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 645 t = 10 ms; (50 Hz), sine TVJ = 45C 2.45 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2.37 kAs TVJ = 150 C 1.77 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 1.73 kAs 54 t P = 300 s average gate power dissipation critical rate of rise of current K/W 250 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 6.9 0.5 TVJ = 150C; f = 50 Hz repetitive, IT = 180 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.45 A/s; I G = 0.45 A; VD = VDRM non-repet., IT = 60 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 150C VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 95 mA TVJ = -40 C 200 mA TVJ = 150 C 0.2 V 10 mA TVJ = 25 C 450 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 60 A; VD = VDRM TVJ = 150 C di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130604c VVZB120-16ioX Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25C 155 A TC = 80 C 108 A 500 W 2.35 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 4 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V TC = 25C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 100 A t d(on) turn-on delay time I C = 100 A; VGE = 15 V TVJ = 25C 2.05 TVJ = 125C 2.45 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25C inductive load 5.9 TVJ = 125C VGE = 15 V; R G = 6.8 short circuit safe operating area t SC short circuit duration VCE = 720 V; VGE = 15 V I SC short circuit current R G = 6.8 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink V 0.1 mA mA 0.1 nA 295 nC 70 ns 40 ns 250 ns 100 ns 8.5 mJ 11.5 mJ TVJ = 125C VCEK = 1200 V SCSOA 6.5 500 VCE = 600 V; IC = 100 A VGE = 15 V; R G = 6.8 5.4 V TVJ = 125C 300 A 10 s A 400 0.25 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 48 A TC = 80 C 32 A TVJ = 25C 2.75 V TVJ = 25C 0.25 mA TVJ = 125C 1 mA I F 80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 400 A/s t rr reverse recovery time IF = R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 600 V 30 A V 1.80 1.8 C 23 A 150 ns TVJ = 125C 0.9 K/W 0.3 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20130604c VVZB120-16ioX Package Ratings V2-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 C -40 150 C 2.5 Nm Weight MD 76 2 mounting torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute XXXXXXXXXXXXX Logo UL Part name Ordering Standard V0 R0 Date code mm 12.0 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL 1 mA Prod. line Part Number VVZB120-16ioX Marking on Product VVZB120-16ioX * on die level Thyristor Brake IGBT Brake Diode V 0 max threshold voltage 0.83 1.1 1.31 R 0 max slope resistance * 3.7 13.8 8 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 6.0 terminal to backside yywwx Equivalent Circuits for Simulation I terminal to terminal t = 1 second isolation voltage g Delivery Mode Box Quantity 6 Code No. 511152 T VJ = 150 C V m Data according to IEC 60747and per semiconductor unless otherwise specified 20130604c VVZB120-16ioX Outlines V2-Pack Detail X Detail Y M 2:1 M 5:1 O1.5 (DIN 46 431) O 6.1 O 2.5 1.5 +0.6-0.3 6.0 (4) 1.5 0.50.2 Y 65 93 38 40.4 78.5 0.3 24.2 0.3 28.8 16.6 0.3 16.8 0.3 11.70.3 9.8 0.3 7.10.3 2.4 0.3 0.8 0.3 4x45 2 0.25 13 17 0.25 X 4.50.5 O 2.1 0.3 1 2 3 5.5 23.8 32 0.2 R 15.4 0.3 15.4 0.3 5.5 0.3 5.5 1 2 3 A B C D E F G H I K L M N O P R S T U V W R1 4 5 6 7 8 9 10 R A B C D E F G H I K L M N O P R S T U V W 4 5 6 7 8 9 10 40 0.15 0.5 80 0.3 Marking O1 S1 E1 I1 M1 W1 L7 G7 C7 O10 W10 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130604c VVZB120-16ioX Thyristor 200 3000 600 TVJ = 125C TVJ = 25C 2500 150 500 TVJ = 45C IF 2000 100 It 400 [A] TVJ= 45C 2 IFSM 1500 TVJ = 150C [A] 2 [A s] 1000 50 TVJ= 150C 300 500 0 0.0 0.5 1.0 1.5 50Hz, 80% VRRM 200 0.001 0.01 2.0 VF [V] 4 5 6 7 89 t [ms] 1000 Fig. 3 I t vs. time per thyristor 160 TVJ = 25C DC = 1 0.5 0.4 0.33 0.17 0.08 140 typ. 120 Limit 100 6 VG 1 100 IT(AV)M tgd 5 80 [s] 4 2 3 1 3 2 Fig. 2 Surge overload current vs. time per thyristor 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C [V] 2 1 1 t [s] Fig. 1 Forward current vs. voltage drop per thyristor 10 0 0.1 [A] 10 60 40 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, T4 = 125C 0.1 100 101 102 103 20 1 10 104 0 100 1000 0 50 Fig. 4 Gate trigger characteristics 0.6 DC = 1 0.5 0.4 100 0.33 0.17 80 0.08 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 0.5 0.4 ZthJC Ptot Constants for ZthJC calc.: 0.3 60 i Rth (K/W) ti (s) 1 2 3 4 5 0.040 0.003 0.140 0.120 0.197 0.004 0.010 0.030 0.300 0.080 [K/W] [W] 40 0.2 20 0.1 0 0.0 20 150 Fig. 5 Max. forward current vs. case temperature per thyristor Fig. 5 Gate trigger delay time 120 0 100 TC [C] IG [mA] IG [mA] 40 60 80 IT(AV)M [A] 0 50 100 Tamb [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per thyristor IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per thyristor Data according to IEC 60747and per semiconductor unless otherwise specified 20130604c VVZB120-16ioX Brake IGBT 200 200 200 VGE = 15 V 13V VGE = 15 V 17 V 19 V 150 180 11V 160 150 140 IC IC TVJ = 25C 100 IC TVJ = 125C TVJ = 125C [A] [A] 50 120 100 100 [A] 80 60 9V 50 TVJ = 125C 40 TVJ = 25C 20 0 0 0 1 2 3 0 0 2 3 4 5 6 7 16 16 15 14 10 IC = 100 A VCE = 600 V 14 VGE = 15 V TVJ = 125C RG = 6.8 VCE = 600 V VGE = 15 V TVJ = 125C 18 E 10 11 12 13 Fig. 3 Typ. tranfer characteristics 20 IC = 100 A VCE = 600 V 9 VGE [V] Fig. 2 Typ. output characteristics 20 12 E 12 Eoff 10 [mJ] 8 [V] 8 VCE [V] VCE [V] Fig. 1 Typ. output characteristics VGE 1 [mJ] 10 Eoff 6 5 4 Eon Eon 8 2 0 0 0 100 200 300 400 6 0 40 80 120 160 200 0 Fig. 4 Typ. turn-on gate charge 4 8 12 16 20 24 RG [ ] IC [A] QG [nC] Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus gate resistance 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 t [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130604c VVZB120-16ioX Brake Diode 80 5 60 TVJ = 125C VR = 600 V 70 4 50 IF = 60 A 30 A 15 A 60 50 IF [A] IF = 60 A 30 A 15 A 3 Qr 40 TVJ = 125C 30 25C [C] 40 IRM 30 [A] 2 20 20 1 0 0 1 2 0 100 3 TVJ = 125C VR = 600 V 10 10 0 1000 0 200 -diF /dt [A/s] VF [V] Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt Fig. 1 Forward current IF vs. VF 220 2.0 trr Kf 1.0 800 1000 120 1.2 TVJ = 125C IF = 30 A 100 200 IF = 60 A 30 A 15 A 180 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt TVJ = 125C VR = 600 V 1.5 400 -diF /dt [A/s] 1.0 80 0.8 60 0.6 40 0.4 VFR [ns] trr [s] [V] 160 IRM 0.5 140 QR 20 0.2 trr VFR 0.0 120 0 40 80 120 160 0 0 200 400 600 800 1000 -diF /dt [A/s] TVJ [C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 200 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 5 Typ. recovery time trr vs. -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 ZthJC [K/W] 0.1 i 0.01 0.001 Ri [K/W] 1 0.465 2 0.179 3 0.256 0.01 0.1 ti [s] 0.0052 0.0003 0.0397 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130604c