VVZB120-16ioX
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit
Thyristor Module
C7
O1
G7
L7
S1
W10
W1
M1
I1
E1
O10
Part number
VVZB120-16ioX
Backside: isolated
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic base plate
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● 3~ Rectifier with brake unit
for drive inverters
V2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
RRM
1600
I180
FSM
700
DAV
V=V
A
A
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I155
CE(sat)
2.05
C25
V=V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20130604cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VVZB120-16ioX
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
V
IA
V
T
1.27
R0.5 K/W
min.
180
VV
50T = 25°C
VJ
T = °C
VJ
mA20V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
250 WT = 25°C
C
60
1600
forward voltage drop
total power dissipation
Conditions Unit
1.90
T = 25°C
VJ
150
V
T0
V0.83T = °C
VJ
150
r
T
6.9 mΩ
V1.25T = °C
VJ
I = A
T
V
60
2.04
I = A180
I = A180
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
54
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
700
755
1.77
1.73
A
A
A
A
595
645
2.45
2.37
1600
300 µs
DAV
d =rectangular ⅓
bridge output current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150°C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
IA;V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
180 A
T
P
G
=0.45
di /dt A/µs;
G
=0.45
DDRM
cr
V = ⅔ V
D DRM
GK
1000
1.5 V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
95 mA
T= °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage T= °C
VJ
0.2 V
I
GD
gate non-trigger current 10 mA
V = ⅔ V
D DRM
150
latching current T= °C
VJ
450 mAI
L
25tµs
p
=10
IA;
G
= 0.45 di /dt A/µs
G
=0.45
holding current T= °C
VJ
200 mAI
H
25V= 6 V
D
R = ∞
GK
gate controlled delay tim e T= °C
VJ
2µst
gd
25
IA;
G
= 0.45 di /dt A/µs
G
=0.45
V = ½ V
D DRM
turn-off time T= °C
VJ
150 µst
q
di/dt = A/µs;10 dv/dt = V/µs;20
V =
R
100 V; I A;
T
=60 V = ⅔ V
D DRM
tµs
p
= 200
non-repet., I = 60 A
T
150
R
thCH
0.10
thermal resistance case to heatsink K/W
Rectifier
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. re pe titive reverse/forward bl ocking volt a ge
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions. 20130604cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VVZB120-16ioX
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current A
155
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
108
V
V
CE(sat)
total power dissipation 500 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
300
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.35
2.45
5.95.4
mA
0.1 mA
0.1
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
295 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
8.5 mJ
11.5 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
400 A
R
thJC
thermal resistance junction to case
0.10
K/W
V
RRM
V1200
max. repe titive rev erse volt a g e T = 25°C
VJ
T = 25°C
forward current A
48
A
C
32
T = °C
C
I
F25
I
F
T = 25°C
forward voltage V
2.75
V
VJ
1.80T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
0.25
mA
VJ
1T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
1.8 µC
23 A
150 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
R
R
thJC
thermal resistance junction to case 0.9 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
100
4
100
100
30
30
6.8
6.8
6.8
600
720
400
600
I
CM
2.05
R
thCH
thermal resistance case to heatsink
0.25
K/W
0.3R
thCH
thermal resistance case to heatsink K/W
Brake IGBT
Brake Diode
600 V
80
80
80
80
nA
IXYS reserves the right to change limits, conditions and dimensions. 20130604cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VVZB120-16ioX
Ratings
XXXXXXXXXXXXX yywwx
Logo UL Part name Date code Prod. lin
e
Package
T
VJ
°C
M
D
Nm2.5
mounting torque 2
T
stg
°C125
storage temperature -40
Weight g76
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 100 A
per terminal
150-40
terminal to terminal
V
2-Pack
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VVZB120-16ioX 511152Box 6VVZB120-16ioXStandard
3000
3600
ISOL
threshold voltage V0.83
mΩ
V
0 max
R
0 max
slope resistance * 3.7
1.1
13.8
1.31
8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Thyristor Brake
IGBT
Brake
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130604cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VVZB120-16ioX
±0.3
±0.15
±0.3
R
R
R1
80
78.5
93
17
13
4x45°
40.4
±0.25
38
0.25
65
40
±0.2
32
23.8
5.5
5.5
15.415.4
0.5
16.8
24.2 28.8
9.8
2.47.1
16.6
±0.3
±0.3±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
2
0.8
±0.3
11.7
5.5
±0.3
4.5±0.5
Marking
M 2:1
(4)
Ø 2.1
Ø 2.5
Ø 6.1
1.5
6.0
Detail X
X
6
9
10
8
7
5
4
3
2
1
F
C
B
A
E
D
H
G
L
K
I
F
C
B
A
D
E
G
H
K
I
L
10
6
S
O
M
N
R
P
9
U
T
V
W
8
7
S
O
M
N
P
R
T
U
5
W
V
4
2
3
1
Y
M 5:1
1.5 +0.6-0.3
Ø1.5 (DIN 46 431)
0.5±0.2
Detail Y
C7
O1
G7
L7
S1
W10
W1
M1
I1
E1
O10
Outlines V2-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20130604cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VVZB120-16ioX
0.001 0.01 0.1 1
200
300
400
500
600
23456789
1
0
500
1000
1500
2000
2500
3000
020406080
0
20
40
60
80
100
120
0 50 100 150 1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
050100150
0
20
40
60
80
100
120
140
160
50Hz, 80% VRRM
0.0 0.5 1.0 1.5 2.0
0
50
100
150
200
TVJ = 45°C
TVJ =150°C
TVJ=45°C
TVJ = 125°C
TVJ =25°C
I
2
t
[A
2
s]
I
FSM
[A]
t[s]
I
F
[A]
V
F
[V] t[ms]
I
T(AV)M
[A] T
amb
[°C]
I
T(AV)M
[A]
T
C
[°C]
t [ms]
Z
thJC
[K/W]
TVJ=150°C
10 100 1000
1
10
100
1000
t
gd
[μs]
I
G
[mA]
typ. Limit
I
G
[mA]
V
G
[V]
100101102103104
0.1
1
10
1
3
2
4
5
6
I
GD
,T4=125°C 6: P
GM
=10W
5: P
GM
=5W
4: P
GAV
=0.5W
1: I
GT
,T
VJ
=125°C
2: I
GT
,T
VJ
= 25°C
3: I
GT
,T
VJ
=-40°C
T
VJ
=25°C
Fig. 4 Gate trigger characteristics Fig. 5 Gate trigger delay time
Fig. 1 Forward current vs.
voltage drop per thyristor
Fig. 2 Surge overload current
vs. time per thyristor
Fig. 3 I
2
t vs. time per thyristor
Fig. 4 Power dissipation vs. forward current
and ambient temperature per thyristor
Fig. 5 Max. forward current vs.
case temperature per thyristor
Fig. 6 Transient thermal impedance junction to case
vs. time per thyristor
RthA:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
P
tot
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Constants for Z
thJC
calc.:
iR
th
(K/W) t
i
(s)
1 0.040 0.004
2 0.003 0.010
3 0.140 0.030
4 0.120 0.300
5 0.197 0.080
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20130604cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VVZB120-16ioX
0123
0
50
100
150
200
0 40 80 120 160 200
0
2
4
6
8
10
12
14
16
18
20
01234
0
50
100
150
200
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9V
11V
5678910111213
0
20
40
60
80
100
120
140
160
180
200
0 100 200 300 400
0
5
10
15
20
TVJ =125°C
13V
04812162024
6
8
10
12
14
16
E
[mJ]
E
off
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy
versus collector current
E
on
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[ ]
E
[mJ]
I
C
[A]
E
on
E
off
V
GE
=15V
TVJ = 25°C
TVJ = 125°C
TVJ =25°C
TVJ = 125°C
I
C
=100A
V
CE
=600V
IC=100 A
VCE =600 V
VGE = ±15 V
TVJ =125°C
RG =6.8
VCE =600V
VGE = ±15 V
TVJ = 125°C
11.010.0100.0
0.01
0.1
1
t[s]
Z
thJC
[K/W]
Fig. 7 Typ. transient thermal impedance junction to case
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20130604cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VVZB120-16ioX
200 600 10000 400 800
120
140
160
180
200
220
11.010.0100.0
0.01
0.1
1
04080120160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
200 600 10000400800
0
10
20
30
40
50
60
0001001
0
1
2
3
4
5
0123
0
10
20
30
40
50
60
70
80
K
f
T
VJ
[°C]
t[s]
V
FR
[V]
I
RM
[A]
Q
r
[μC]
I
F
[A]
V
F
[V] -di
F
/dt [A/μs]
t
rr
[ns]
Z
thJC
[K/W]
VFR
trr
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time t
rr
vs. -di
F
/dt Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
t
rr
[μs]
I
F
=60A
30 A
15 A
I
F
=60A
30 A
15 A
I
RM
Q
R
I
F
=60A
30 A
15 A
-di
F
/dt [A/μs]
-di
F
/dt [A/μid-]s
F
/dt [A/μs]
T
VJ
=125°C
I
F
=30A
T
VJ
=125°C
25°C
iR
i
t
i
[K/W] [s]
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
T
VJ
=125°C
V
R
=600V
T
VJ
=125°C
V
R
=600V
T
VJ
=125°C
V
R
=600V
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions. 20130604cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
