BUX98C HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS: HIGH FREQUENCY AND EFFICENCY CONVERTERS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX98C is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, intended for use in switching and industrial applications from single and three-phase mains operations. 1 2 TO-3 (version R) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CER Collector-Emitter Voltage (R BE 0 ) Parameter 1200 V V CES Collector-Emitter Voltage (V BE = 0) 1200 V V CEO Collector-Emitter Voltage 700 V V EBO Emitter-Base Voltage (I C = 0) 7 V Collector Current 30 A I CM Collector Peak Current (t p < 5 ms) 60 A I CMP Collector Peak Current non Repetitive 80 A IC IB Base Current I BM Base Peak Current (t p < 5 ms) P tot Total Dissipation at T c = 25 o C T stg Storage Temperature Tj June 1997 Max. Operating Junction Temperature 8 A 30 A 250 W -65 to 200 o C 200 o C 1/4 BUX98C THERMAL DATA R thj-case Thermal Resistance Junction-case ELECTRICAL CHARACTERISTICS (Tcase = 25 Symbol I CER Parameter Max o 0.7 C/W o C unless otherwise specified) Test Conditions Min. Typ. Max. Unit o 1 8 mA mA o 1 6 mA mA Collector Cut-off Current (R BE = 10 ) V CE = V CES V CE = V CES T case = 125 C Collector Cut-off Current (V BE = 0 ) V CE = V CES V CE = V CES T case = 125 C I CEO Collector Cut-off Current (I B = 0) V CE = V CEO 2 mA I EBO Emitter Cut-off Current (I C = 0) V CB = 5 V 2 mA I CES V CEO(sus) Collector-Emitter Sustaining Voltage I C = 100 mA 700 V V CE(sat) Collector-Emitter Saturation Voltage I C = 12 A I C = 16 A I C = 20 A IB = 3 A IB = 5 A IB = 8 A 1.5 2 3 V V V V BE(sat) Base-Emitter Saturation Voltage I C = 12 A I C = 20 A IB = 3 A IB = 8 A 1.6 2 V V Turn-on Time Storage Time Fall Time RESISTIVE LOAD V CC = 250 V I C = 12 A I B1 = - I B2 = 3 A 1 3 0.8 s s s t on ts tf Pulsed: Pulse duration = 300 s, duty cycle = 1.5 % 2/4 0.5 1.5 0.2 BUX98C TO-3 (version R) MECHANICAL DATA mm DIM. MIN. A inch TYP. MAX. MIN. TYP. 11.7 B MAX. 0.460 0.96 1.10 0.037 0.043 C 1.70 0.066 D 8.7 0.342 E 20.0 0.787 G 10.9 0.429 N 16.9 0.665 P 26.2 R 3.88 1.031 4.09 U 0.152 39.50 V 1.555 30.10 1.185 A P D C O N B V E G U 0.161 R P003N 3/4 BUX98C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4