BUX98C
HIGH POWER NPN SILICON TRANSISTOR
■SGS -THO MS ON PRE F ERRE D SALES T YP E
■NPN TRANSISTOR
■HIGH VOLTAGE CAPABILITY
■HIGH CURRENT CAPABILITY
■FAST SWITCHING SPEED
APPLICATIONS:
■ HIGH FREQUENCY AND EFFICENCY
CONVERTERS
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
Th e BUX98C is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-3 metal case, intended for
use in switching and industrial applications from
single and three-phase mains operations.
INTERNAL SCHEMATIC DIAG RAM
June 1997
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCER Collector-Emitter Voltage (RBE ≤ 0 Ω) 1200 V
VCES Collector-Emitter Voltage (VBE = 0) 1200 V
VCEO Collector-Emitter Voltage 700 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 30 A
ICM Collector Peak Current (tp < 5 ms) 60 A
ICMP Collector Peak Current non Repetitive 80 A
IBBase Current 8 A
IBM Base Peak Current (tp < 5 ms) 30 A
Ptot Total Dissipation at Tc = 25 oC250W
T
stg Storage Temperature -65 to 200 oC
TjMax. Operating Junction Temperature 200 oC
12
TO-3
(version R)
1/4
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.7 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless other wise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICER Collector Cut-off
Current (RBE = 10 Ω)VCE = VCES
VCE = VCES Tcase = 125 oC1
8mA
mA
ICES Collector Cut-off
Current (VBE = 0 ) VCE = VCES
VCE = VCES Tcase = 125 oC1
6mA
mA
ICEO Collector Cut-off
Current (IB = 0) VCE = VCEO 2mA
I
EBO Emitter Cut-off C urrent
(IC = 0) VCB = 5 V 2 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage IC = 100 mA 700 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 12 A IB = 3 A
IC = 16 A IB = 5 A
IC = 20 A IB = 8 A
1.5
2
3
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 12 A IB = 3 A
IC = 20 A IB = 8 A 1.6
2V
V
ton
ts
tf
Turn-on Time
Storage Time
Fall Time
RESISTIVE LOAD
VCC = 250 V IC = 12 A
IB1 = - IB2 = 3 A
0.5
1.5
0.2
1
3
0.8
µs
µs
µs
∗ P ulsed: P ulse durati on = 300 µs, duty cycle = 1.5 %
BUX98C
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.7 0.460
B 0.96 1.10 0.037 0.043
C 1.70 0.066
D 8.7 0.342
E 20.0 0.787
G 10.9 0.429
N 16.9 0.665
P 26.2 1.031
R 3.88 4.09 0.152 0.161
U 39.50 1.555
V 30.10 1.185
E
B
R
C
D
A
P
G
N
V
U
O
P003N
TO-3 (version R) MECHANICAL DATA
BUX98C
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
conse quences of us e of s uch information n or for any infringement of patents or oth er rights of third parties which may results from its use. No
license is granted by implicat ion or ot h erwise under any patent or patent rights of SGS-THOMSON Micro el ectronics . Specificati ons ment ioned
in this publicat ion are subject to change without noti ce. This publicat ion su pers edes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
writte n approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - A ll Rights Reserved
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
Australia - Braz il - Canada - China - France - Germany - Hong Kong - I taly - Japan - Korea - Malay sia - Malta - Moroc co - The Netherlands -
Singapore - Spain - Sweden - Switze rland - Taiwan - Thailand - Unit ed Kingdom - U.S.A
. . .
BUX98C
4/4
