MOSPEC COMPLEMENTARY SILICON POWER TRANSISTORS The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators,and other linear applications. FEATURES: * High Power Dissipation Pp = 250 W (T, = 25C) * High DC Current Gain and Low Saturation Voltage hFE = 25(Min) @ I, =5.0A, Veg = 2.0 V * For Low Distortion Complementary Designs MAXIMUM RATINGS NPN PNP MJ15003 MJ15004 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS Characteristic Symbol Rating Unit Collector-Emitter Voltage Vceosus) 140 Vv Collector-Base Voltage Vepo 140 Vv Emitter-Base Voltage Vepo 5.0 Vv Collector Current-Continuous lo 20 A Peak (1) lom 30 Base Current-Continuous lp 5.0 A Peak (1) lam 10 Total Power Dissipation @T,=25C 250 w Derate above 25C Py 1.43 wre Operating and Storage Junction Ty. Tst Temperature Range -65 to +200 (1) Pulse Test: Pulse width =5 ms , Duty Cycle < 10% THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 0.70 CAV FIGURE -1 POWER DERATING 250 225 8 175 150 125 _ 3a 8 Pp , POWER DISSIPATION(WATTS) nN or Oo o 25 50 75 100 125 150 175 200 Te , TEMPERATURE( C) PIN 1.,BASE 2.EMITTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 38.75 | 30.96 B 19.28 | 22.23 Cc 7.96 9.28 D 11.18 | 1219 E 25.20 | 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 | 30.40 | 16.64 | 17.30 J 3.88 4.36 K 10.67 | 11.18MJ15003 NPN / MJ15004 PNP | ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symtr>i Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (2) Veeoisus) Vv (1, = 200 mA, I, = 0) 140 Collector Cutoff Current 0 uA (Voge = 140 V, I, = 0) 250 Collector Cutoff Current loex ( Veg = 140 V, Vaciom = 1-5 V) 100 uA (Veg = 140 V, Veggie = 1.5 VT. = 150C) 2.0 mA Emitter Cutoff Current leBo uA (Veg = 5.0 V, 1, =0) ; 100 ON CHARACTERISTICS (2) DC Current Gain hFE (lg =5.0A, Veg = 2.0 V) 25 150 Collector - Emitter Saturation Voltage Veeisat) Vv (1, =5.0A, |, = 500 mA) 1.0 Base - Emitter On Voltage VeeE{on) Vv (Ig= 5.0A, Veg = 2.0V ) 2.0 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (3) fy MHz (I, = 500 MA, Veg = 10 V ,f = 0.5 MHz ) 2.0 Output capacitance Con pF ( Vop = 4.0 V, I, = 0, f = 1 MHz ) 1000 (2) Pulse Test: Pulse width = 300 ts , Duty Cycle = 2.0% (3) f= [be F test FIG-2 FORWARD BIAS SAFE OPERATING AREA T 5=200C - Bonding Wrre Limit ~ Thermally Limited (Single Puise)} Second Breakdown Limited Curves Apply Below Rated V czo ic , COLLECTOR CURRENT (Amp) 3 5 10 20 50 4100 200 Vee, COLLECTOR EMITTER VOLTAGE (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-2 is base on Typig=200 C:T< is vari- able depending on conditions.At high case temperatures , thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. lo-VeeMJ15003 NPN /MJ15004 PNP a DC CURRENT GAIN MJ15003 MJ15004 300 o, 300 200}- Ty*100 C T=100C 200 z z 100 ~ o, & 400 & 70 Ty=25 ~C Zz 2 50 G70 Ty=25C i s 50 % o 3 8 Q 20 2 = 7 z 10 10 ? 7 5 5 62 03 0.5 1 2 5 7 10 20 02 03 05 1 2 5 7 10 20 lc , COLLECTOR CURRENT (AMP) le , COLLECTOR CURRENT (AMP) "ON" VOLTAGE MJ15003 MJ15004 20 2.0 16 16 ay a - BE a 12 @ 12 2 2 a 0.8 a 08 Ty=26 C Vae@Vce=2V > > > T,=100C > T,=100%C 04 400c 0.4- t00%e Veejser)@lo/s*10 25C Veg(set) @lofa=10 25C 0 0 02 03 05 07 1.0 20 3.0 5.0 7.0 10 20 02 03 05 07 1.0 20 3.0 50 7.0 10 20 IC , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP) CAPACITANCES CURRENT GAIN- BANDWIDTH PRODUCT T225C ~ =~ MJ15003 NPN Voe=t0V MJ15004 PNP z f test #0.5MHz c = MJ15004(PNP) cc) 6 g a Zz x a E 3 : < fe) S F o Z MJ15003(NPN) Tye28C 0.1 02 0.5 1.0 2.0 5.0 10 5 2.0 . 10 20 400 10 5.0 80 ic , COLLECTOR CURRENT (AMP) Vr,REVERSE VOLTAGE(VOLTS)