FFOT7-1F UIE ) MM 9000378 OOO00b3 a7T M@ISEM IN5439 - thru INTERNATIONAL SEMICOND ~ International 1N5456 Semiconductor, Inc. thru HIGH Q - VOLTAGE VARIABLE CAPACITORS 1N5476 MINIMUM CAPACITANCE QUALITY TUNING RATIO + at Vr=4 Vde FACTOR 2V to 30 V ) 1MHz Q @ 4 vDC 0.017 MAX. | TYPE pF f=50 MHz MIN MAX 2.718 DIA. +e 1N54.39 3.3 450 2.83 3.4 1,000 jay. 1N5440 4.7 450 2.4 3.1 25.40 7N54417 6.8 450 2.5 3.1 IND 442 8.2 450 2.5 3.1 Polarity 0.500 yay 1N5443 10.0 400 2.6 3.1 Band 7.620 " 1N5444 12.0 400 2.6 3.1 (Cathode) 1N5445 75.0 400 2.6 3.4 1N5446 18.0 350 2.6 3.4 1.000 ax. IN5447 20.0 350 2.6 3.1 0.018/0.022 25-40 1N5448 22.0 350 2.6 3.2 0.457/0.559 > | 1IN5449 27.0 850 2.6 3,2 Diameter 1N5450 I3.0 350 2.6 3.2 IN5457 39.0 300 2.6 3,2 . . . INCH 1N5452 470 250 0 6 39 All Dimensions in Mm IN5453 56.0 200 2.6 3.3 DO-7 1N5454 68.0 175 2.7 3.3 71N5455 E2.0 175 2.7 3.3 1N5456 100.0 175 2.7 3.3 | Package Style DO-7 (NO467 6.6 600 2.7 3.1 TR Breakdown Voltage 1N5462 B82 600 5B 34 everse Breakdown Voltag 1N5463 10.0 550 2.38 3.1 at Ir=10ua 30 Volts Min 1N5464 12.0 550 2.8 3.2 D.C. Power Dissipation at 25 C 400 mW Max IND 465 15.0 550 2.8 3.1 Operating Temperature -65 to +150 C INO 406 18.0 500 2.9 3.1 Ist T t ~65 to +150 C 1N5467 20.0 500 519 3.4 orage Temperature o+ 1N5468 22.0 500 2.9 3.2 Reverse Current at 25 Vdc 0.02ua Max 1N5469 27.0 500 2.9 3,2 Reverse Current at 25 Vde (150 C) 20 ua Max tNeoot 35.0 500 2.9 3.2 Capacitance Tolerance 39.0 450 2.9 3.2 i 20% 1N5472 47.0 400 519 3.0 Standard Device +/- 20% 1N5473 56.0 300 2.9 3.3 Suffix A +/- 10% 1N5474 68.0 250 2.9 3.3 Suffix B +/- 5% INS475 82.0 225 2.9 3.3 Suffix C +/- 2% 1N5476 100.0 200 2.9 3.3 Suffix D +/- 1% CORPORATE OFFICES: SALES OFFICE: 727 Raritan Road - Suite 203 574 E. Alamo, #40 Clark, NJ 07066 Chandler, AZ 85225 T=": 908 396-0322 Tel: 602 497-8172 Kx: 908 396-0410 Fax: 602 497-8173 VVID~i