DATA SHEET NEC SILICON SWITCHING DIODES 1$2835,1S2836 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : COMMON ANODE MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters @ Low capacitance: C, = 2.5 pF TYP. @ High speed switching: t,, = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. | ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (T, = 25 C) 182835 182836 Peak Reverse Voltage Vam 35 75 Vv DC Reverse Voltage Ve 30 50 v Surge Current (1 us) * leou 6.0 6.0 A Marking o Surge Current (1 ps} tesm 4.0 4.0 A 3 2 Peak Forward Current* jem 450 450 mA < 3 ; 5 Peak Forward Current tem 300 300 mA 3 { { . L Average Rectified Current I 150 150 mA 5 Average Rectified Current = Io 100 100 mA o Maximum Temperatures . 9, Connection Diagrem Junction Temperature Tj 125 125 Cc (Top View) Storage Temperature Range Tse 65 to +125 55 to +125 C 2 Thermal Resistance Cathode Ls Junction to Ambient* Rin(j-a) 1.0 1.0 C/imw Marking Junetion to Ambient Rtht-a) 0.67 0.67 C/mW rs om 182835 A3 Cathode 182836 Ad * Both dicdes loaded simultaneously. ELECTRICAL CHARACTERISTICS (Tq = 25 C) 1$2835 (A3} 182636 (A4} : CHARACTERISTIC SYMBOL UNIT TEST CONDITIONS min. | TYP. | Max. | MIN. | TYP, | MAX. Vey 0.72 tO 0.72 10 v ip =10mA Forward Voltage VE2 0.88 1.41 0.88 11 Vv Ip = 50 mA VE3 1.0 1.2 1.0 1.2 v tg = 100 mA ig 0.1 BA VR =30V Reverse Current + ig 0.1 BA VR =50V Capacitance | Ge 25 | 40 25 40 pF Vr = 0, f= 1.0 MHz Reverse Recovery Time i ter | 40 40 ns See Test Circuit. Dacument No. OC ~ 10544 (O.D.No. DC--50254} Date Published October 1900 M ; Printed in Japan NEC Corporation 198 83 NEC 1$2835,1S2836 TYPICAL ELECTRICAL CURVES (T, = 25 C) FORWARD CURRENT vs. REVERSE CURRENT ys. FORWARD VOLTAGE 192835 REVERSE VOLTAGE 182835 Ip-Forward CurrentmA ip Reverse CurrentmA 0 10 20 30 40 50 a 02 a4 0.6 08 16 12 Vp-~-Reverse Voltage--V Ve-Forward Voltage-V FORWARD CURRENT vs. REVERSE CURRENT vs. 100 FORWARD VOLTAGE 182836 REVERSE VOLTAGE 182836 50 20 < c 10 | & z 5 3 S 8 = x S | ot & & 05 02 1 10 20 30 40 50 0. 0 02 O4 O06 08 10 12 Vp -Revese Voltage--V Vp ~Forward VoltageV TERMINAL CAPACITANCE vs. REVERSE AECOVERY TIME vs. REVERSE VOLTAGE 132835, 2836 FORWARD CURRENT 192835, 2836 20 - Cy Terminal CapacitancepF trr Reverse Recovery Timens 05 1 2 5 10 20 50 100 20 40 60 80 100 Vp -Reverse Voltage-V ig Forward Current--mA 84 NEC 1S2835,1S2836 REVERSE RECOVERY TIME (ty) TEST CIRCUIT Output Current input Voltage " ; Tigger Waveform to Diode Waveform in Diode 7 + | uT | Pulse 9.02 wf or Sampling oe 4 0 F *t Generator . Oscilloscope ia (50 9) (50 9} R Ob, 3 ke til / + [Sore FJ Source [= Ip=10 mA, Vp =6.0 V, RL=100 ter] Jer =O.1-l,