BB 112 Silicon Variable Capacitance Diode For AM tuning applications Specified tuning range 1 ... 8.0 V BB 112 Type Marking Ordering Code Pin Configuration Package1) BB 112 - Q62702-B240 TO-92 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 12 V Forward current, TA 60 C IF 50 mA Operating temperature range Top - 55 ... + 85 C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 112 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. - - - - 50 200 440 17.5 470 - 520 34 nA Reverse current VR = 10 V VR = 10 V, TA = 60 C IR Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V CT Capacitance ratio VR = 1 V, 8 V CT1 CT8 15 - - - Series resistance VR = 1 V, f = 0.5 MHz rs - 1.4 - Q factor VR = 1 V, f = 0.5 MHz Q - 480 - - Temperature coefficient of diode capacitance VR = 1 V, f = 1 MHz TCC - 500 - ppm/K Capacitance matching VR = 1 ... 8 V CT - - 3 % Semiconductor Group pF CT 2 BB 112 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) Temperature coefficient of junction capacitance TCC = f (VR) Semiconductor Group 3