Semiconductor Group 1
BB 112
Silicon Variable Capacitance Diode BB 112
●For AM tuning applications
●Specified tuning range
1 … 8.0 V
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BB 112 Q62702-B240– TO-92
Parameter Symbol Values Unit
Reverse voltage VR12 V
Forward current,
T
A≤ 60 ˚C IF50 mA
Operating temperature range Top – 55 … + 85 ˚C
1) For detailed information see chapter Package Outlines.
07.94
Semiconductor Group 2
BB 112
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol
min. typ.
UnitValues
max.
Reverse current
VR = 10 V
VR = 10 V, TA = 60 ˚C
IRnA
–
––
–50
200
Diode capacitance, f= 1 MHz
VR = 1 V
VR = 8 V
CTpF
440
17.5 470
–520
34
Capacitance ratio
VR = 1 V, 8 V CT1
CT8 –15 – –
Series resistance
VR = 1 V, f = 0.5 MHz rsΩ– 1.4 –
Q factor
VR = 1 V, f = 0.5 MHz Q–– 480 –
Temperature coefficient
of diode capacitance
VR = 1 V, f = 1 MHz
TCCppm/K– 500 –
Capacitance matching
VR = 1 … 8 V ∆CT
CT%––3
Semiconductor Group 3
BB 112
Diode capacitance CT = f (VR)
Capacitance ratio CT/CT1V =f (VR)
Capacitance ratio CT/CTref = f (VR)
Temperature coefficient of junction
capacitance TCC = f (VR)
