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©2010 ROHM Co., Ltd. A l l ri ghts reserved.
1.5V Drive Nch + Pch MOSFET
TT8M1
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.5V drive).
Application
Switching
Packaging specifications Inner circuit
Package Taping
Code TR
Basic ordering unit (pieces) 3000
TT8M1
Absolute maximum ratings (Ta = 25C)
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage VDSS 20 20 V
Gate-source voltage VGSS 10 10 V
Continuous ID2.5 2.5 A
Pulsed IDP 10 10 A
Continuous Is0.8
0.8 A
Pulsed Isp 10 10 A
W / TOTAL
W / ELEMENT
Channel temperature Tch C
Range of storage temperature Tstg C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
Type
Source current
(Body Diode)
Drain current
Parameter Unit
Limits
1
150
Power dissipation PD1.25
55 to +150
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1
*2
*1
Abbreviated symbol :M01
TSST8
(1) (2) (3) (4)
(8) (7) (6) (5)
1/8 2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. A l l ri ghts reserved.
TT8M1
Electrical characteristics (Ta = 25C)
<Tr1(Nch)> Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --10 AV
GS=10V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 20 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS --1AV
DS=20V, VGS=0V
Gate threshold voltage VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA
-5272 I
D=2.5A, VGS=4.5V
-6590 I
D=2.5A, VGS=2.5V
85 120 ID=1.2A, VGS=1.8V
100 140 ID=0.5A, VGS=1.5V
Forward transfer admittance l Yfs l 2.7 - - S VDS=10V, ID=2.5A
Input capacitance Ciss - 260 - pF VDS=10V
Output capacitance Coss - 65 - pF VGS=0V
Reverse transfer capacitance Crss - 35 - pF f=1MHz
Turn-on delay time td(on) -9-nsI
D=1.2A, VDD 10V
Rise time tr- 17 - ns VGS=4.5V
Turn-off delay time td(off) - 28 - ns RL 8.3
Fall time tf- 17 - ns RG=10
Total gate charge Qg- 3.6 - nC ID=2.5A, VDD 10V
Gate-source charge Qgs - 0.7 - nC VGS=4.5V,RL 4
Gate-drain charge Qgd - 0.6 - nC RG=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage VSD - - 1.2 V Is=2.5A, VGS=0V
*Pulsed
Parameter Conditions
ConditionsParameter
Static drain-source on-state
resistance RDS (on) m
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
2/8 2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. A l l ri ghts reserved.
TT8M1
Electrical characteristics (Ta = 25C)
<Tr2(Pch)> Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --10 AV
GS=10V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 20 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS -1AV
DS=20V, VGS=0V
Gate threshold voltage VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA
-4968 I
D=2.5A, VGS=4.5V
-6895 I
D=1.2A, VGS=2.5V
100 150 ID=1.2A, VGS=1.8V
- 140 280 ID=0.5A, VGS=1.5V
Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=2.5A
Input capacitance Ciss - 1270 - pF VDS=10V
Output capacitance Coss - 100 - pF VGS=0V
Reverse transfer capacitance Crss - 90 - pF f=1MHz
Turn-on delay time td(on) -9-nsI
D=1.2A, VDD 10V
Rise time tr- 30 - ns VGS=4.5V
Turn-off delay time td(off) - 120 - ns RL 8.3
Fall time tf- 85 - ns RG=10
Total gate charge Qg- 12 - nC ID=2.5A, VDD 10V
Gate-source charge Qgs - 2.5 - nC VGS=4.5V,RL 4
Gate-drain charge Qgd -2-nCR
G=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage VSD --1.2 V Is=2.5A, VGS=0V
*Pulsed
Parameter Conditions
Conditions
m
Static drain-source on-state
resistance RDS (on)
Parameter
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
3/8 2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. A l l ri ghts reserved.
TT8M1 　
Electrical characteristic curves (Ta = 25°C)
<Tr1(Nch)>
10
100
1000
0.01 0.1 1 10
VGS= 1.5V
Pulsed
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
VGS= 1.0V
Ta=25°C
Pulsed
VGS= 1.2V
VGS= 2.5V
VGS= 2.0V
VGS= 1.8V
VGS= 1.5V
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2
VDS= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
10
100
1000
0.01 0.1 1 10
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.5V
Ta= 25°C
Pulsed
0
1
2
3
4
5
0246810
VGS= 1.0V
Ta=25°C
Pulsed
VGS= 1.5V
VGS= 4.5V
VGS= 2.5V
VGS= 1.8V
VGS= 1.2V
10
100
1000
0.01 0.1 1 10
VGS= 2.5V
Pulsed
10
100
1000
0.01 0.1 1 10
VGS= 4.5V
Pulsed
0.1
1
10
0.01 0.1 1 10
VDS= 10V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
0.01 0.1 1 10
VGS= 1.8V
Pulsed
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)Fig.9 Forward Transfer Admittance
vs. Drain Current
DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
FORWARD TRANSFER ADMITTANCE : |Yf s| [S]
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
VGS= 4.5V
4/8 2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. A l l ri ghts reserved.
TT8M1 　
0
50
100
150
200
0510
Ta=25°C
Pulsed
ID= 1.25A
ID= 2.5A
0.01
0.1
1
10
0 0.5 1 1.5
VGS=0V
Pulsed
0
1
2
3
4
5
012345
Ta=25°C
VDD=10V
ID=2.5A
RG=10Ω
Pulsed 10
100
1000
0.01 0.1 1 10 100
Ciss
Coss
Crss
Ta=25°C
f=1MHz
VGS=0V
1
10
100
1000
0.01 0.1 1 10
tf
td(off)
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
t
td(on)
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.12 Switching Characteristics
SOURCE CURRENT : Is [A]
SOURCE-DRAIN VOLTAGE : VSD [V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
GATE-SOURCE VOLTAGE : VGS[V]
SWITCHING TIME : t [ns]
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS [V]
TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V]
CAPACITANCE : C [p F]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
5/8 2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. A l l ri ghts reserved.
TT8M1 　
<Tr2(Pch)>
0
1
2
3
4
0246810
Ta=25°C
Pulsed
VGS= -1.2V
VGS= -1.1V
VGS= -1.3V
VGS= -1.4V
VGS= -10V
VGS= -1.5V
VGS= 1.8V
0
1
2
3
4
0 0.2 0.4 0.6 0.8 1
VGS= -1.3V
VGS= -4.5V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
VGS= -1.1V
Ta=25°C
Pulsed
0.001
0.01
0.1
1
10
0 0.5 1 1.5
VDS= -10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
10
100
1000
0.1 1 10
Ta=25°C
Pulsed VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
10
100
1000
0.1 1 10
VGS= -2.5V
Pulsed Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
0.1 1 10
VGS= -4.5V
Pulsed Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0
1
10
100
0.1 1 10
VDS= -10V
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
0.1 1 10
VGS= -1.8V
Pulsed Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Fig.5 Static Drain-Source On-State
Resistance vs. Drain Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)Fig.9 Forward Transfer Admittance
vs. Drain Current
DRAIN CURRENT : -ID[A]
DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
FORWARD TRANSFER ADMITTANCE : |Yf s| [S]
DRAIN-CURRENT : -ID[A]
10
100
1000
0.1 1 10
VGS= -1.5V
Pulsed Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
DRAIN-CURRENT : -ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
6/8 2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. A l l ri ghts reserved.
TT8M1 　
0
50
100
150
200
250
300
0246810
Ta=25°C
Pulsed
ID= -2.5A
ID= -1.2A
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
1
2
3
4
5
02468101214
Ta=25°C
VDD= -10V
ID= -2.5A
RG=10Ω
Pulsed
10
100
1000
10000
0.01 0.1 1 10 100
Ciss
Coss
Crss
Ta=25°C
f=1MHz
VGS=0V 1
10
100
1000
10000
0.01 0.1 1 10
tr
tf
td(off)
Ta=25°C
VDD= -10V
VGS=-4.5V
RG=10Ω
Pulsed
td(on)
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage Fig.12 Dynamic Input Characteristics
Fig.13 Typical Capacitance
vs. Drain-Source Fig.14 Switching Characteristics
REVERSE DRAIN CURRENT : -Is [A]
SOURCE-DRAIN VOLTAGE : -VSD [V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
GATE-SOURCE VOLTAGE : -VGS[V]
SWITCHING TIME : t [ns]
DRAIN-CURRENT : -ID[A]
GATE-SOURCE VOLTAGE : -VGS [V]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : -VDS[V]
CAPACITANCE : C [p F]
7/8 2010.08 - Rev.A
Data Sheet
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©2010 ROHM Co., Ltd. A l l ri ghts reserved.
TT8M1
Measurement circuits
<Tr1(Nch)>
<Tr2(Pch)>
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
Fig.2-2 Gate Charge Waveform
V
G
V
GS
Charge
Qg
Qgs Qgd
Fig.1-2 Switching waveforms
90%
90% 90
%
10% 10%
50%
10%
50%
V
GS
Pulse width
V
DS
ton toff
tr
td(on) tf
td(off)
F
ig.1-1 Switching time measurement circu
it
V
GS
R
G
V
D
S
D.U.T.
I
D
R
L
V
DD
F
ig.2-1 Gate charge measurement circuit
V
GS
I
G(Const.)
V
D
S
D.U.T.
I
D
R
L
V
DD
F
ig.3-1 Switching time measurement circu
it
V
GS
R
G
V
D
S
D.U.T.
I
D
R
L
V
DD
Fig.3-2 Switching waveforms
90%
90% 90%
10% 10
%
50%
10%
50%
V
GS
Pulse width
V
DS
ton toff
tr
td(on) tf
td(off)
Fig.4-2 Gate charge waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
F
ig.4-1 Gate charge measurement circuit
V
GS
I
G(Const.)
R
G
V
D
S
D.U.T.
I
D
R
L
V
DD
8/8 2010.08 - Rev.A
R1010
A
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© 2010 ROHM Co., Ltd. All rights reserved.
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"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
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Datasheet
Part Number tt8m1
Package TSST8
Unit Quantity 3000
Minimum Package Quantity 3000
Packing Type Taping
Constitution Materials List inquiry
RoHS Yes
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