1.5V Drive Nch + Pch MOSFET TT8M1 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :M01 Application Switching Inner circuit Packaging specifications Type TT8M1 Package Taping Code TR Basic ordering unit (pieces) 3000 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Source current (Body Diode) Limits Tr1 : N-ch Tr2 : P-ch 20 VDSS Unit 20 V V VGSS 10 10 Continuous ID 2.5 2.5 A Pulsed Continuous IDP Is *1 10 0.8 10 0.8 A A Pulsed Isp *1 10 10 A Gate-source voltage Drain current Symbol *2 Power dissipation Channel temperature Range of storage temperature PD Tch Tstg 1.25 W / TOTAL 1 150 55 to +150 W / ELEMENT C C 1 ESD PROTECTION DIODE 2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 1/8 2010.08 - Rev.A Data Sheet TT8M1 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=10V, VDS=0V Gate-source leakage Drain-source breakdown voltage V (BR)DSS 20 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=20V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA - 52 72 - 65 90 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Conditions RDS (on)* 85 120 100 140 ID=2.5A, VGS=4.5V m ID=2.5A, VGS=2.5V ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V l Yfs l* 2.7 - - S VDS=10V, ID=2.5A Input capacitance Ciss - 260 - pF VDS=10V Output capacitance Coss - 65 - pF VGS=0V Reverse transfer capacitance Crss - 35 - pF f=1MHz Turn-on delay time td(on) * - 9 - ns ID=1.2A, VDD 10V tr * - 17 - ns VGS=4.5V td(off) * - 28 - ns RL 8.3 tf * - 17 - ns RG=10 Total gate charge Qg * - 3.6 - nC ID=2.5A, VDD 10V Gate-source charge Gate-drain charge Qgs * Qgd * - 0.7 0.6 - nC nC VGS=4.5V,RL 4 RG=10 Forward transfer admittance Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=2.5A, VGS=0V *Pulsed www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 2/8 2010.08 - Rev.A Data Sheet TT8M1 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=10V, VDS=0V Gate-source leakage Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current 20 IDSS Conditions - - V ID=1mA, VGS=0V - 1 A VDS=20V, VGS=0V - 1.0 V VDS=10V, ID=1mA VGS (th) 0.3 - 49 68 ID=2.5A, VGS=4.5V RDS (on)* - 68 95 ID=1.2A, VGS=2.5V 100 150 - 140 280 l Yfs l* 2.5 - - S VDS=10V, ID=2.5A Input capacitance Ciss - 1270 - pF VDS=10V Output capacitance Coss - 100 - pF VGS=0V Reverse transfer capacitance Crss - 90 - pF f=1MHz Turn-on delay time td(on) * - 9 - ns ID=1.2A, VDD 10V tr * - 30 - ns VGS=4.5V td(off) * - 120 - ns RL 8.3 tf * - 85 - ns RG=10 Total gate charge Qg * - 12 - nC ID=2.5A, VDD 10V Gate-source charge Gate-drain charge Qgs * Qgd * - 2.5 2 - nC nC VGS=4.5V,RL 4 RG=10 Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time m ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=2.5A, VGS=0V *Pulsed www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 3/8 2010.08 - Rev.A Data Sheet TT8M1 Electrical characteristic curves (Ta = 25C) <Tr1(Nch)> 3 VGS= 2.5V VGS= 2.0V VGS= 1.8V VGS= 1.5V 2 VGS= 1.2V 1 10 4 VGS= 4.5V VGS= 2.5V VGS= 1.8V 3 VGS= 1.5V 2 VGS= 1.2V 1 0.1 0.6 0.8 1 0.001 0 1000 Ta= 25C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] Fig.1 Typical Output Characteristics( ) VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 100 10 0.01 0.1 1 1000 2 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( ) www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 1 1.5 2 Fig.2 Typical Output Characteristics( ) Fig.3 Typical Transfer Characteristics VGS= 4.5V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 10 0.01 0.1 1 10 1000 VGS= 2.5V Pulsed 10 0.01 Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 100 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( ) 4/8 0.1 1 10 DRAIN-CURRENT : ID[A] 1000 VGS= 1.5V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 10 1 0.5 DRAIN-CURRENT : ID[A] Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 0.1 0 10 100 10 100 0.01 8 GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A] VGS= 1.8V Pulsed 6 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( ) 1000 4 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0.4 Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 0.01 0 0.2 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 0 0 VDS= 10V Pulsed VGS= 1.0V VGS= 1.0V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] Ta=25C Pulsed DRAIN CURRENT : ID[A] VGS= 4.5V 4 5 Ta=25C Pulsed DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 5 10 VDS= 10V Pulsed 1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2010.08 - Rev.A Data Sheet VGS=0V Pulsed 1 Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 0.1 0.01 0 0.5 1 200 ID= 2.5A 150 ID= 1.25A 100 50 1.5 tf 100 td(off) td(on) 10 1 0 5 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 5 Ta=25C VDD=10V VGS=4.5V RG=10 Pulsed t 0 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.12 Switching Characteristics 1000 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : VGS [V] 1000 Ta=25C Pulsed SWITCHING TIME : t [ns] SOURCE CURRENT : Is [A] 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] TT8M1 4 3 2 Ta=25C VDD=10V ID=2.5A RG=10 Pulsed 1 0 0 1 2 3 4 Ta=25C f=1MHz VGS=0V Ciss 100 Crss Coss 10 5 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. Fig.14 Typical Capacitance vs. Drain-Source Voltage 5/8 2010.08 - Rev.A Data Sheet TT8M1 <Tr2(Pch)> VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 3 2 Ta=25C Pulsed VGS= -1.3V 1 Ta=25C Pulsed VGS= 1.8V VGS= -1.3V 2 VGS= -1.5V VGS= -1.2V 1 0 0.2 0.4 0.6 0.8 VDS= -10V Pulsed 1 Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 0.1 0.01 VGS= -1.1V VGS= -1.1V 0 1 0.001 0 2 4 6 8 10 0 0.5 1 1.5 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.1 Typical Output Characteristics( ) Fig.2 Typical Output Characteristics( ) Fig.3 Typical Transfer Characteristics 1000 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 10 0.1 1 1000 VGS= -4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 100 10 0.1 10 DRAIN-CURRENT : -ID[A] 1 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 100 10 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( ) www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 10 0.1 VGS= -1.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 100 10 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( ) 6/8 1 10 DRAIN-CURRENT : -ID[A] 1000 Ta=125C Ta=75C Ta=25C Ta= -25C Ta= -25C Ta=25C Ta=75C Ta=125C 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain 1000 VGS= -1.8V Pulsed VGS= -2.5V Pulsed DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Ta=25C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] VGS= -1.4V 3 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 10 VGS= -10V DRAIN CURRENT : -ID[A] 4 DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 4 100 VDS= -10V Pulsed 10 Ta= -25C Ta=25C Ta=75C Ta=125C 1 0 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2010.08 - Rev.A Data Sheet 10 Ta=25C Pulsed 250 ID= -2.5A 200 150 100 50 ID= -1.2A 0 0 2 4 6 8 5 VGS=0V Pulsed Ta=125C Ta=75C Ta=25C Ta=-25C 1 0.1 0.01 10 0 GATE-SOURCE VOLTAGE : -VGS[V] 0.2 0.4 0.6 0.8 10000 SWITCHING TIME : t [ns] 1000 Coss Crss 100 Ta=25C f=1MHz VGS=0V 0.1 3 2 Ta=25C VDD= -10V ID= -2.5A RG=10 Pulsed 1 0 0 2 4 6 8 10 12 14 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics Ta=25C VDD= -10V VGS=-4.5V RG=10 Pulsed td(off) 1000 4 tf 100 10 td(on) tr 1 10 0.01 1.2 Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage 10000 Ciss 1 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] 300 REVERSE DRAIN CURRENT : -Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] TT8M1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source www.rohm.com (c)2010 ROHM Co., Ltd. All rights reserved. 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.14 Switching Characteristics 7/8 2010.08 - Rev.A Data Sheet TT8M1 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton Fig.1-1 Switching time measurement circuit tf toff Fig.1-2 Switching waveforms VG VGS ID VDS RL D.U.T. IG(Const.) Qg VGS Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate charge measurement circuit Pulse width <Tr2(Pch)> ID VDS VGS VGS 10% 50% 90% RL D.U.T. 10% VDD RG 50% VDS 90% td(on) 90% td(off) tr ton Fig.3-1 Switching time measurement circuit 10% tf toff Fig.3-2 Switching waveforms VG ID VDS VGS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.4-1 Gate charge measurement circuit Fig.4-2 Gate charge waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com (c)2010 ROHM Co., Ltd. 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