MML09231HT1
1
RF Device Data
Freescale Semiconductor, Inc.
Enhancement Mode pHEMT
Technology (E--pHEMT)
Low Noise Amplifier
The MML09231H is a single--stage low noise amplifier (LNA) with active
bias and high isolation for use in cellular infrastructure applications. It is
designed for a range of low noise, high linearity applications such as small
cell, tower mounted amplifiers (TMA) and receiver front--end circuits. It
operates from a single voltage supply and is suitable for applications with
frequencies from 700 to 1400 MHz such as ISM, GSM, W--CDMA and LTE.
Features
Ultra Low Noise Figure: 0.36 dB @ 900 MHz
Frequency: 700--1400 MHz
Unconditionally Stable Over Temperature
High Reverse Isolation: --21 dB @ 900 MHz
P1dB: 24.5 dBm @ 900 MHz
Small--Signal Gain: 17.2 dB @ 900 MHz (adjustable externally)
Third Order Output Intercept Point: 37.4 dBm @ 900 MHz
Single 5 V Supply
Power--down Pin
Supply Current: 55 mA
50 Ohm Operation (some external matching required)
Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
DFN 2 2
700--1400 MHz, 17.2 dB
24.5dBm,0.36dBNF
E--pHEMT LNA
MML09231HT1
Table 1. Typical Performance (1)
Characteristic Symbol
700
MHz
900
MHz
1400
MHz Unit
Noise Figure (2a) NF 0.46(b) 0.36(b) 0.45(b) dB
Input Return Loss
(S11)
IRL -- 1 7 -- 1 5 -- 1 4 dB
Output Return Loss
(S22)
ORL -- 1 4 -- 1 5 -- 1 5 dB
Small--Signal Gain
(S21)
Gp19 17.2 13.2 dB
Power Output @
1dB Compression
P1dB 24 24.5 24 dBm
Third Order Input
Intercept Point
IIP3 17 20.2 23.8 dBm
Third Order Output
Intercept Point
OIP3 36 37.4 37 dBm
1. VDD =5Vdc,T
A=25C, 50 ohm system, application circuit
tuned for specified frequency.
2. (a) Noise figure value calculated with connector losses
removed. (b) Zin =50.
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage VDD 6 V
Supply Current IDD 150 mA
RF Input Power Pin 20 dBm
Storage Temperature Range Tstg --65 to +150 C
Junction Temperature TJ175 C
Table 3. Thermal Characteristics
Characteristic Symbol Value (3) Unit
Thermal Resistance, Junction to Case
Case Temperature 95C, 5 Vdc, 55 mA, no RF applied
RJC 77 C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Freescale Semiconductor
Technical Data
Document Number: MML09231H
Rev. 1, 9/2014
Freescale Semiconductor, Inc., 2013--2014.
A
ll rights reserved.
Figure 1. Pin Connections
(Top View)
RFout/VDD
RFin
18
27
36
N.C.
4 5
VBIAS
N.C.
Power Down
N.C.
GND
N.C.
Note: Exposed backside of the package is
DC and RF ground.
2
RF Device Data
Freescale Semiconductor, Inc.
MML09231HT1
Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA=25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Symbol Min Typ Max Unit
Small--Signal Gain (S21) Gp15.8 17.2 —dB
Input Return Loss (S11) IRL — -- 1 5 —dB
Output Return Loss (S22) ORL —-- 1 5 —dB
Power Output @ 1dB Compression P1dB —24.5 —dBm
Third Order Input Intercept Point IIP3 —20.2 —dBm
Third Order Output Intercept Point OIP3 —37.4 —dBm
Reverse Isolation (S12) |S12| —-- 2 1 —dB
Noise Figure (1) NF —0.36 —dB
Supply Current (2) IDD 40 55 70 mA
Supply Voltage VDD — 5 — V
Supply Current in Power Down Mode IPD —1.1 —mA
Logic Voltage for Power Down (3)
Input High Voltage
Input Low Voltage
VPD 2.2
0
—
—
VDD
0.5
V
1. Noise figure value calculated with connector losses removed.
2. DC current measured with no RF signal applied.
3. Limits derived from device characterization.
Table 5. Functional Pin Description
Pin
Number Pin Function
1 VBIAS
2RFin
3 No Connection
4 No Connection
5 No Connection
6 No Connection
7RFout/Supply Voltage
8Power Down (active high)
Table 6. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD 22--A114) 1B, passes 700 V
Machine Model (per EIA/JESD 22--A115) A
Charge Device Model (per JESD 22--C101) IV
Table 7. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 1260 C
MML09231HT1
3
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 900 MHz
RF
OUTPUT
L1
C1 C2
L2
C4
C3
2
5
7
6
BIAS
CIRCUIT
RF
INPUT
3
18
4
N.C.
R1
R2
C5
C6
POWER
DOWN
V
DD
N.C.
N.C.
N.C.
Figure 2. MML09231H Test Circuit Schematic
Table 8. MML09231H Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C2 180 pF Chip Capacitor GRM1555C1H181JA01 Murata
C3 27 pF Chip Capacitor GRM1555C1H270JA01 Murata
C4 220 pF Chip Capacitor GRM1555C1H221JA01 Murata
C5, C6 1000 pF Chip Capacitors GRM1885C1H102JA01 Murata
L1 20 nH Chip Inductor 0402HP-20NXGLW Coilcraft
L2 47 nH Chip Inductor 0402HP-47NXGLW Coilcraft
R1 4.7 k 1/10 W Chip Resistor CR21-472J-B Kyocera
R2 0, 1 A Chip Resistor CR0402-J/-000GLFCT Bourns
PCB 0.02,r=3.50 RO4350B Rogers
4
RF Device Data
Freescale Semiconductor, Inc.
MML09231HT1
50 OHM APPLICATION CIRCUIT: 900 MHz
VDD
POWER
DOWN
R1
R2
C6
C5
C4
C3
C1 L1 C2L2
RFIN RFOUT
DFN 2x2--8N
Rev. 0
Figure 3. MML09231H Test Circuit Component Layout
NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply
decoupling and grounding are employed.
Table 8. MML09231H Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C2 180 pF Chip Capacitor GRM1555C1H181JA01 Murata
C3 27 pF Chip Capacitor GRM1555C1H270JA01 Murata
C4 220 pF Chip Capacitor GRM1555C1H221JA01 Murata
C5, C6 1000 pF Chip Capacitors GRM1885C1H102JA01 Murata
L1 20 nH Chip Inductor 0402HP-20NXGLW Coilcraft
L2 47 nH Chip Inductor 0402HP-47NXGLW Coilcraft
R1 4.7 k 1/10 W Chip Resistor CR21-472J-B Kyocera
R2 0, 1 A Chip Resistor CR0402-J/-000GLFCT Bourns
PCB 0.02,r=3.50 RO4350B Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML09231HT1
5
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
0
35
30
25
20
10
5
15
1400700 840 980 1120 1260
-- 2 6
-- 1 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
-- 2 4
Figure 4. S11 versus Frequency versus
Temperature
1400
-- 2 8
0
700
f, FREQUENCY (MHz)
840
-- 4
-- 8
-- 1 2
-- 1 6
-- 2 0
-- 2 4
S11 (dB)
980 1120 1260
Figure 5. S12 versus Frequency versus
Temperature
f, FREQUENCY (MHz)
S12 (dB)
-- 4 0 C
85C
Figure 6. S21 versus Frequency versus
Temperature
10
24
f, FREQUENCY (MHz)
22
20
18
14
12
S21 (dB)
16
Figure 7. S22 versus Frequency versus
Temperature
f, FREQUENCY (MHz)
S22 (dB)
1400700 840 980 1120 1260
VDD =5Vdc
25C
25C
85C
VDD =5Vdc
-- 2 6
-- 1 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
-- 2 4
1400700 840 980 1120 1260
VDD =5Vdc
VDD =5Vdc
VDD =5Vdc
-- 4 0 C-- 4 0 C
-- 4 0 C
85C
25C
25C
85C
25C
-- 4 0 C
6
RF Device Data
Freescale Semiconductor, Inc.
MML09231HT1
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
0.9
Figure 8. Noise Figure versus Frequency
versus Temperature
f, FREQUENCY (MHz)
1.5
0.5
NF, NOISE FIGURE (dB)
1.3
0.7
0.3
1.1
0.1
700 840 980 1120 1260 1400
-- 4 0 C
Figure 9. Third Order Output Intercept Point
(Two--Tone) versus Frequency versus Temperature
f, FREQUENCY (MHz)
42
32
36
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
40
34
30
38
28
700 840 980 1120 1260 1400
Figure 10. P1dB versus Frequency versus
Temperature, CW
f, FREQUENCY (MHz)
27
26
25
22
24
21
23
28
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
700 840 980 1120 1260 1400
25C85C
VDD =5Vdc
1 MHz Tone Spacing
25C
85C
-- 4 0 C
-- 4 0 C
25C
VDD =5Vdc
VDD =5Vdc
85C
MML09231HT1
7
RF Device Data
Freescale Semiconductor, Inc.
0.30
0.50
2.40
1.20 0.60
2.00
0.80
Figure 11. PCB Pad Layout for DFN 2 2
1.6 0.8 solder pad with
thermal via structure. All
dimensions in mm.
Figure 12. Product Marking
MC
YW
8
RF Device Data
Freescale Semiconductor, Inc.
MML09231HT1
PACKAGE DIMENSIONS
MML09231HT1
9
RF Device Data
Freescale Semiconductor, Inc.
10
RF Device Data
Freescale Semiconductor, Inc.
MML09231HT1
MML09231HT1
11
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0May 2013 Initial Release of Data Sheet
1Sept. 2014 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
12
RF Device Data
Freescale Semiconductor, Inc.
MML09231HT1
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their
respective owners.
E2013--2014 Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Document Number: MML09231H
Rev. 1, 9/2014
