MOCD217M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) Features Description UL Recognized (File #E90700, Volume 2) The MOCD217M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting. VDE Recognized (File #136616) (add option "V" for VDE approval, i.e, MOCD217VM) Low Input Current (specified @ 1mA) Minimum BVCEO of 30 Volts Guaranteed Convenient Plastic SOIC-8 Surface Mountable Package Style Standard SOIC-8 Footprint, with 0.050" Lead Spacing High Input-Output Isolation of 2500 VAC(rms) Guaranteed Applications Interfacing and Coupling Systems of Different Potentials and Impedances General Purpose Switching Circuits Monitor and Detection Circuits Schematic Package Outline ANODE 1 1 8 COLLECTOR 1 CATHODE 1 2 7 EMITTER 1 Figure 2. Package Outline ANODE 2 3 6 COLLECTOR 2 5 EMITTER 2 CATHODE 2 4 Figure 1. Schematic (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5 www.fairchildsemi.com MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) April 2013 Symbol Rating Value Unit 60 mA Emitter IF Forward Current - Continuous Forward Current - Peak (PW = 100 s, 120 pps) 1.0 A VR Reverse Voltage 6.0 V PD LED Power Dissipation @ TA = 25C Derate above 25C 90 0.8 mW mW/C VCEO Collector-Emitter Voltage 30 V VECO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 150 mA PD Detector Power Dissipation @ TA = 25C Derate above 25C 150 1.76 mW mW/C IF (pk) Detector Total Device VISO Input-Output Isolation Voltage (f = 60 Hz, t = 1 minute) 2500 Vac(rms) PD Total Device Power Dissipation @ TA = 25C Derate above 25C 250 2.94 mW mW/C TA Ambient Operating Temperature Range -40 to +100 C Storage Temperature Range -40 to +150 C Tstg Notes: 1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second. (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5 www.fairchildsemi.com 2 MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25C unless otherwise specified. TA = 25C unless otherwise specified. Symbol Parameter Test Conditions Min. Typ.* Max. Unit Emitter VF Input Forward Voltage IF = 10 mA 1.05 1.3 V IR Reverse Leakage Current VR = 6.0 V 0.1 100 A C Capacitance 18 pF Detector ICEO1 Collector-Emitter Dark Current ICEO2 VCE = 10 V, TA = 25C 1.0 VCE = 10 V, TA = 100C 1.0 50 A nA BVCEO Collector-Emitter Breakdown Voltage IC = 100 A 30 90 V BVECO Emitter-Collector Breakdown Voltage IE = 100 A 7.0 7.8 V CCE Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 V 7.0 pF Current Transfer Ratio(4) IF = 1.0 mA, VCE = 5 V 130 % Coupled CTR VCE (sat) Collector-Emitter Saturation 100 IC = 2.0 mA, IF = 10 mA 0.35 0.4 V Voltage ton Turn-On Time IC = 2.0 mA, VCC = 10 V, RL = 100 (Fig. 8) 7.5 s toff Turn-Off Time IC = 2.0 mA, VCC = 10 V, RL = 100 (Fig. 8) 5.7 s tr Rise Time IC = 2.0 mA, VCC = 10 V, RL = 100 (Fig. 8) 3.2 s tf Fall Time IC = 2.0 mA, VCC = 10 V, RL = 100 (Fig. 8) 4.7 s VISO Isolation Surge Voltage(1)(2)(3) (2) RISO Isolation Resistance CISO Isolation Capacitance(2) f = 60 Hz, t = 1 minute 2500 VI-O = 500 V 1011 VI-O = 0 V, f = 1 MHz Vac(rms) 0.2 pF *Typical values at TA = 25C Notes: 1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second. 4. Current Transfer Ratio (CTR) = IC / IF x 100%. (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5 www.fairchildsemi.com 3 MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) Electrical Characteristics 1.8 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 VF - FORWARD VOLTAGE (V) 1.7 1.6 1.5 1.4 TA = -55C 1.3 1.2 TA = 25C 1.1 TA = 100C 1.0 1 10 100 VCE = 5V NORMALIZED TO IF = 10 mA 1 0.1 IF - LED FORWARD CURRENT (mA) 0.01 Figure 3. LED Forward Voltage vs. Forward Current 0.1 1 10 100 IF - LED INPUT CURRENT (mA) Figure 4. Output Curent vs. Input Current 1.6 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1 NORMALIZED TO TA = 25 o C 0.1 -80 -60 -40 -20 0 20 40 60 80 100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 I F = 10 mA NORMALIZED TO VCE = 5 V 0.0 0 120 1 2 3 4 5 6 7 8 9 10 VCE - COLLECTOR-EMITTER VOLTAGE (V) o TA - AMBIENT TEMPERATURE ( C) Figure 6. Output Current vs. Collector - Emitter Voltage Figure 5. Output Current vs. Ambient Temperature I CEO - COLLECTOR -EMITTER DARK CURRENT (nA) 10000 VCE = 10 V 1000 100 10 1 0.1 0 20 40 60 80 100 o TA - AMBIENT TEMPERATURE ( C) Figure 7. Dark Current vs. Ambient Temperature (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5 www.fairchildsemi.com 4 MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) Typical Performance Curves WAVEFORMS VCC = 10 V INPUT PULSE IF IC INPUT RL 10% OUTPUT OUTPUT PULSE 90% tr Adjust IF to produce IC = 2 mA ton tf toff Figure 8. Switching Time Test Circuit and Waveform (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5 www.fairchildsemi.com 5 MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) TEST CIRCUIT 8-pin SOIC Surface Mount 8 0.164 (4.16) 0.144 (3.66) SEATING PLANE 1 0.202 (5.13) 0.182 (4.63) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Typ. Lead Coplanarity: 0.004 (0.10) MAX Recommended Pad Layout 0.024 (0.61) 0.060 (1.52) 0.275 (6.99) 0.155 (3.94) 0.050 (1.27) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5 www.fairchildsemi.com 6 MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) Package Dimensions MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) Ordering Information Option Order Entry Identifier V V R2 R2 R2V R2V Description VDE 0884 Tape and Reel (2500 units per reel) VDE 0884, Tape and Reel (2500 units per reel) Marking Information 1 D217 V X YY S 3 4 2 6 5 Definitions (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 One digit year code, e.g., `8' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code www.fairchildsemi.com 7 8.0 0.10 2.0 0.05 3.50 0.20 0.30 MAX O1.5 MIN 1.75 0.10 4.0 0.10 5.5 0.05 8.3 0.10 5.20 0.20 0.1 MAX 6.40 0.20 12.0 0.3 O1.5 0.1 User Direction of Feed Dimensions in mm (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5 www.fairchildsemi.com 8 MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) Carrier Tape Specifications MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) Reflow Profile Temperature (C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3C/S Max. Ramp-down Rate = 6C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150C Temperature Maximum (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3C/second maximum Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60-150 seconds Peak Body Package Temperature 260C +0C / -5C Time (tP) within 5C of 260C 30 seconds Ramp-down Rate (TP to TL) 6C/second maximum Time 25C to Peak Temperature (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5 8 minutes maximum www.fairchildsemi.com 9 MOCD217M -- Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current) 10 www.fairchildsemi.com (c)2005 Fairchild Semiconductor Corporation MOCD217M Rev. 1.0.5