TRANSYS TIP150, TIP151, TIP152 ELECTRONICS LIMITED NPN SILICON POWER DARLINGTONS 80 W at 25C Case Temperature TO-220 PACKAGE (TOP VIEW) 7 A Continuous Collector Current 10 A Peak Collector Current Maximum VceE(av Of 2 V atIp = 5 A C C) IcEX(sus) 7 A at rated V(BR)CEO Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP150 300 Collector-base voltage (Ip = 0) TIP151 Vecso 350 Vv TIP 152 400 TIP150 300 Collector-emitter voltage (lp = 0) TIP151 VcEo 350 Vv TIP 152 400 Emitter-base voltage VEBo 8 Vv Continuous collector current lo 7 A Peak collector current (see Note 1) lom 10 A Continuous base current lB 1.5 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 80 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 2 WwW Operating junction temperature range Tj -65 to +150 C Storage temperature range Tstg -65 to +150 C Lead temperature 3.2 mm from case for 10 seconds TL 260 C NOTES: 1. This value applies for t, < 5 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 0.64 W/C. 3. Derate linearly to 150C free air temperature at the rate of 16 MW/C.TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT TIP150 300 V Collector-base Ic= 1mA Ip =0 TIP151 350 V (BR)CBO breakdown voltage cm Ee TIP 152 400 . TIP150 300 V Collector-emitter I= 10mA Ip =0 TIP151 350 V (BR)CEO breakdown voltage om Be (see Note 4) TIP152 400 . Vopr = 300 V Ip=0 TIP150 250 | Collector-emitter Vor = 350 V Ip =0 TIP151 250 A CEO cut-off current cee Be is Voge = 400 V Ip =O TIP 152 250 | Collector-emitter Vv -y 7 A CEX(sus) sustaining current CLAMP = V(BR)CEO | Emitter cut-off Vea= BV In =0 i mA FBO current EB~ a Vop= 5V Ic=2.5A 150 h Forward current Vec= 8V l= BA (see Notes 4and5) | 50 FE transfer ratio cee a Vop= 5V Ic= 7A 15 . lp = 10mA lo = 1A 1.5 v Collectoremitter Ig = 100 mA Ib= 2A (see Notes 4 and 5) 15 |v CE(sat) saturation voltage Be ce lp = 250mA lo = 5A 2 Base-emitter Ip= 100 mA Ic= 2A 2.2 VBE(sat) . (see Notes 4 and 5) Vv saturation voltage Ip= 250 mA Ilc= 5A 2.3 Parallel diode Vec le= 7A lp =O (see Notes 4 and 5) 3.5 Vv forward voltage Small signal forward Ne . Vee = 5V lo =0.5A f= 1 kHz 200 current transfer ratio Small signal forward [Niel . Vege = 5V Ic =0.5A f= 1 MHz 10 current transfer ratio Cob Output capacitance Vep= 10V lp =0 f= 1 MHz 100 pF NOTES: 4. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN | TYP | MAX | UNIT Rec Junction to case thermal resistance 1.56 C/W Roya Junction to free air thermal resistance 62.5 C/W Coc Thermal capacitance of case 0.9 JC inductive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT tey Voltage storage time 3.9 us tsi Current storage time ln=5A 4.7 us try Voltage transition time Vv, ~ -v IB(on) = 250 MA Ree = 47 Q 1.2 us ti Current transition time | (camp) ~ (BR}CEO 1.2 us tyo Cross-over time 2.0 us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS PARAMETER MEASUREMENT INFORMATION 24V Driver and Current Limiting Circuit Figure 1. Functional Test Circuit 16.6 ms 11.6 ms Input Signal Base Current 0 Collector Current 0 Collector Emitter 0 Voltage Figure 2. Functional Test Waveform s 40V 12V 7mH BY205-600 Figure 3. Switching Test CircuitTIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS - Typical DC Current Gain Neg Vee(sat - Base-Emitter Saturation Voltage - V TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 10000 Vop=5V t, = 300 Us, duty cycle <2% T, = 125C To= 25C T, = -30C 1000 100 |, - Collector Current - A Figure 4. BASE-EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT 3-0 Io/ l= 201 | | t, = 300ps, duty cycle < 2% 2:5 a or 2.0 ae IY 1 Les rN \ ANE Lae To = 25C PN 1, = 125C 1-0 L L L Ll 0-4 1:0 10 |, - Collector Current - A Figure 6. COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 10 I, /l, = 20 t, = 300 Ys, duty cycle < 2% Vee(eat - COllector-Emitter Saturation Voltage - V } 0-1 0-4 1:0 10 |, - Collector Current - A Figure 5. COLLECTOR CUT-OFF CURRENT VS CASE TEMPERATURE 1000 Vog = 400 V I, =0 100 10 loeg - Collector Cut-off Current - pA 1-0 -50 -25 0 25 50 75 T, - Case Temperature - C 100 125 Figure 7.TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 10 < 6 Ss 10 3 9 oO 0.1 t,= 0.1 ms = ims TIP150 i= Sms TIP151 DC Operation TIP152 0-01 1-0 10 100 1000 Vog - Collector-Emitter Voltage - V Figure 8. THERMAL INFORMATION MAXIMUM POWER DISSIPATION VS CASE TEMPERATURE 100 = 80 5 @ 2 3 \ a 60 g \ 5 N a 40 \ E 5 N\ = IN a= 20 \ 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 9.TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0220 470 4,20 3,96 < > 1,32 9371 2,95 123 L 2,54 see Note B 6,6 __. CD 4 60 15,90 14,55 see Note C _ 64 3,5 S vy ____ v Kl 14,1 1,70 12,7 0,97 1,07 0,61 @) (2) @) i u 2,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 : VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.