DP8216MJNOPB - National Semiconductor

TL/F/8753

DP8216/DP8216M/DP8226/DP8226M 4-Bit Bidirectional Bus Transceivers

June 1990

DP8216/DP8216M/DP8226/DP8226M

4-Bit Bidirectional Bus Transceivers

General Description

The DP8216/DP8216M and DP8226/DP8226M are 4-bit bi-

directional bus drivers to use in bus oriented applications.

The non-inverting DP8216/DP8216M and inverting

DP8226/DP8226M drivers are provided for flexibility in sys-

tem design.

Each buffered line of the four-bit drivers consists of two

separate buffers that are TRI-STATEÉto achieve direct bus

interface and bidirectional capability. On one side of the

driver the output of one buffer and the input of another are

tied together (DB); this side is used to interface to the sys-

tem side components such as memories, I/O, etc., because

its interface is TTL compatible and it has high driver (50

mA). On the other side of the driver the inputs and outputs

are separated to provide maximum flexibility. Of course,

they can be tied together so that the driver can be used to

buffer a true bidirectional bus. The DO outputs on this side

of the driver have a special high voltage output drive capa-

bility so that direct interface to the 8080 type CPUs is

achieved with an adequate amount of noise immunity.

The CS input is a device enable. When it is ‘‘high’’ the out-

put drivers are all forced to their high-impedance state.

When it is a ‘‘low’’ the device is enabled and the direction of

the data flow is determined by the DIEN input.

The DIEN input controls the direction of data flow, which is

accomplished by forcing one of the pair of buffers into its

high-impedance state and allowing the other to transmit its

data. A simple two-gate circuit is used for this function.

Features

YData bus buffer driver to 8080 type CPUs

YLow input load currentÐ0.25 mA maximum

YHigh output drive capability for driving system data

busÐ50 mA at 0.5V

YPower up-down protection

YDP8216/DP8216M have non-inverting outputs

YDP8226/DP8226M have inverting outputs

YOutput high voltage compatible with direct interface to

MOS

YTRI-STATE outputs

YAdvanced Schottky processing

YAvailable in military and commercial temperature

Logic Diagrams

DP8216/DP8216M

TL/F/8753–1

DP8226/DP8226M

TL/F/8753–2

TRI-STATEÉis a registered trademark of National Semiconductor Corp.

C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales

Office/Distributors for availability and specifications.

Min Max Units

All Output and Supply Voltages b0.5 a7.0 V

All Input Voltages b1.0 a5.5 V

Output Currents 125 mA

Maximum Power Dissipation*at 25§C

Cavity Package 1509 mW

Molded Package 1476 mW

Note: *Derate cavity package 10.1 mW/§C above 25§C; derate molded

package 11.8 mW/§C above 25§C.

Min Max Units

Storage Temperature b65 a150 §C

Lead Temperature (soldering, 4 seconds) 260 §C

Operating Conditions

Min Max Units

Supply Voltage, VCC

DP8216M, DP8226M 4.5 5.5 V

DP8216, DP8226 4.75 5.25 V

Temperature, TA

DP8216M, DP8226M b55 a125 §C

DP8216, DP8226 0 a70 §C

Electrical Characteristics DP8216, DP8226 VCC e5V g5% (Notes 2, 3, and 4)

Symbol Parameter Conditions Limits Units

Min Typ Max

DRIVERS

VIL Input Low Voltage 0.95 V

VIH Input High Voltage 2 V

IFInput Load Current VFe0.45V b0.03 b0.25 mA

IRInput Leakage Current VRe5.25V 10 mA

VCInput Clamp Voltage ICeb

5mA b

1.2 V

VOL1 Output Low Voltage IOL e25 mA 0.3 0.45 V

VOL2 Output Low Voltage DP8216 IOL e55 mA 0.5 0.6 V

DP8226 IOL e50 mA

VOH Output High Voltage IOH eb

10 mA 2.4 3.0 V

ISC Output Short Circuit Current VCC e5V b30 b75 b120 mA

Output Leakage Current TRI-STATE VOe0.45V/5.5V 100 mA

RECEIVERS

VIL Input Low Voltage 0.95 V

VIH Input High Voltage 2 V

IFInput Load Current VFe0.45V b0.08 b0.25 mA

VCInput Clamp Voltage ICeb

5mA b

1.2 V

VOL Output Low Voltage IOL e15 mA 0.3 0.45 V

VOH1 Output High Voltage IOH eb

1 mA 3.65 4.0 V

ISC Output Short Circuit Current VCC e5V b15 b35 b65 mA

Output Leakage Current TRI-STATE VOe0.45V/5.5V 20 mA

CONTROL INPUTS (CS, DIEN)

VIL Input Low Voltage 0.95 V

VIH Input High Voltage 2 V

IFInput Load Current VFe0.45V b0.15 b0.5 mA

IRInput Leakage Current VRe5.25V 20 mA

ICC Power Supply Current

DP8216 95 130 mA

DP8226 85 120 mA

Electrical Characteristics (Continued) DP8216M, DP8226M VCC e5V g10% (Notes 2, 3 and 4)

Symbol Parameter Conditions Limits Units

Min Typ Max

DRIVERS

VIL Input Low Voltage

DP8216M 0.95 V

DP8226M 0.90 V

VIH Input High Voltage 2 V

IFInput Load Current VFe0.45V b0.08 b0.25 mA

IRInput Leakage Current VRe5.5V 40 mA

VCInput Clamp Voltage ICeb

5mA b

1.2 V

VOL1 Output Low Voltage IOL e25 mA 0.3 0.45 V

VOL2 Output Low Voltage IOL e45 mA 0.5 0.6 V

VOH Output High Voltage IOH eb

5 mA 2.4 3.0 V

ISC Output Short Circuit Current VCC e5.0V b30 b75 b120 mA

Output Leakage Current TRI-STATE VOe0.45V/5.5V 100 mA

RECEIVERS

VIL Input Low Voltage

DP8216M 0.95 V

DP8226M 0.9 V

VIH Input High Voltage 2 V

IFInput Load Current VFe0.45V b0.08 b0.25 mA

VCInput Clamp Voltage ICeb

5mA b

1.2 V

VOL Output Low Voltage IOL e15 mA 0.3 0.45 V

VOH1 Output High Voltage IOH eb

0.5 mA 3.4 3.8 V

VOH2 Output High Voltage IOH eb

2 mA 2.4 V

ISC Output Short Circuit Current VCC e5.0V b15 b35 b65 mA

Output Leakage Current TRI-STATE VOe0.45V/5.5V 20 mA

CONTROL INPUTS (CS, DIEN)

VIL Input Low Voltage

DP8216M 0.95 V

DP8226M 0.9 V

VIH Input High Voltage 2 V

IFInput Load Current VFe0.45V b0.15 b0.5 mA

IRInput Leakage Current VRe5.5V 80 mA

ICC Power Supply Current

DP8216M 95 130 mA

DP8226M 85 120 mA

Switching Characteristics (Notes 2, 3 and 4)

Symbol Parameter Conditions Limits Units

Min Typ Max

DP8216M, DP8226M, VCC e5V g10%

tPD1 Input to Output Delay, DO Outputs CLe30 pF, R1e300X,15 25 ns

R2e600X

tPD2 Input to Output Delay, DB Outputs CLe300 pF, R1e90X,

DP8216M R2e180X19 33 ns

DP8226M 16 25 ns

tEOutput Enable Time DO Outputs: CLe30 pF,

DP8216M R1e300X42 75 ns

DP8226M R2e600X36 62 ns

DB Outputs: CLe300 pF,

R1e90X

R2e180X

tDOutput Disable Time DO Outputs: CLe5 pF,

DP8216M R1e300X16 40 ns

DP8226M R2e600X16 38 ns

DB Outputs: CLe5 pF,

R1e90X

R2e180X

DP8216, DP8226 VCC e5.0V g5%

tPD1 Input to Output Delay, DO Outputs CLe30 pF, R1e300X,15 25 ns

R2e600X

tPD2 Input to Output Delay, DB Outputs CLe300 pF, R1e90X,

DP8216 R2e180X20 30 ns

DP8226 16 25 ns

tEOutput Enable Time DO Outputs: CLe30 pF,

DP8216 R1e300X45 65 ns

DP8226 R2e600X35 54 ns

DB Outputs: CLe300 pF,

R1e90X

R2e180X

tDOutput Disable Time DO Outputs: CLe5 pF,

R1e300X

R2e600X20 35 ns

DB Outputs: CLe5 pF,

R1e90X

R2e180X

Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the

devices should be operated at these limits. The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation.

Note 2: Unless otherwise specified, min/max limits apply across the b55§Ctoa

125§C temperature range for the DP8216M and DP8226M and across the

0§Ctoa

70§C temperature range for the DP8216 and DP8226. All typical values are given for VCC e5V and TAe25§C.

Note 3: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to ground unless otherwise specified.

Note 4: Only one output at a time should be shorted.

Test Conditions

Input rise and fall times of 5.0 ns between 1.0V and 2.0V.

Output loading is 5.0 mA and 10 pF.

Speed measurements are made at 1.5V levels.

Test Load Circuit

TL/F/8753–4

Switching Time Waveforms

TL/F/8753–5

Connection Diagram

Dual-In-Line Package

TL/F/8753–3

Order Number DP8216J, DP8216N, DP8226J, DP8226N,

DP8216MJ or DP8226MJ

See NS Package Number J16A or N16A

Capacitance TAe25§C

Symbol Parameter Limit Unit

Min Typ Min

CIN Input Capacitance 4 6 pF

COUT Output Capacitance

DO Outputs 6 10 pF

DO Outputs 13 18 pF

Note: This parameter is periodically sampled and is not 100% tested. Condi-

tion of measurement is f e1 MHz, VBIAS e2.5V, VCC e5.0V, and TAe

25§C.

DP8216/DP8216M/DP8226/DP8226M 4-Bit Bidirectional Bus Transceivers

Physical Dimensions inches (millimeters)

Ceramic Dual-In-Line Package (J)

Order Number DP8216J, DP8226J, DP8216MJ or DP8226MJ

NS Package Number J16A

Molded Dual-In-Line Package (N)

Order Number DP8216N, or DP8226N

NS Package N16A

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or 2. A critical component is any component of a life

systems which, (a) are intended for surgical implant support device or system whose failure to perform can

into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life

failure to perform, when properly used in accordance support device or system, or to affect its safety or

with instructions for use provided in the labeling, can effectiveness.

be reasonably expected to result in a significant injury

to the user.

National Semiconductor National Semiconductor National Semiconductor National Semiconductor

Corporation Europe Hong Kong Ltd. Japan Ltd.

1111 West Bardin Road Fax: (

49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309

Arlington, TX 76017 Email: cnjwge

tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408

Tel: 1(800) 272-9959 Deutsch Tel: (

49) 0-180-530 85 85 Tsimshatsui, Kowloon

Fax: 1(800) 737-7018 English Tel: (

49) 0-180-532 78 32 Hong Kong

Fran3ais Tel: (

49) 0-180-532 93 58 Tel: (852) 2737-1600

Italiano Tel: (

49) 0-180-534 16 80 Fax: (852) 2736-9960

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.