VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2516 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1317-01 11 11 * * * * Ultra low loss thin IGBT die Highly rugged SPT design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 2000 V, VCEM 2500 V VGE 15 V, Tvj 125 C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 2500 V 54 A 108 A 20 V 10 s 125 C 5SMX 12L2516 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 2500 Collector-emitter saturation voltage VCE sat VGE = 0 V, IC = 1 mA, Tvj = 25 C IC = 54 A, VGE = 15 V Tvj = 125 C 2.7 V Tvj = 25 C Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C Qge Input capacitance Cies V V VCE = 2500 V, VGE = 0 V Gate charge 100 Tvj = 125 C IC = 10 mA, VCE = VGE, Tvj = 25 C 1000 nA 5 7.5 V IC = 54 A, VCE = 1250 V, VGE = -15 ..15 V 480 Cres 0.14 Internal gate resistance RGint 5 Turn-on delay time td(on) td(off) Fall time Turn-on switching energy Turn-off switching energy Short circuit current 2) tf Eon Eoff ISC nC 6.7 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Reverse transfer capacitance Turn-off delay time A 500 Coes tr A -500 Output capacitance Rise time Unit 2.2 ICES VGE(TO) max Tvj = 25 C Collector cut-off current Gate-emitter threshold voltage typ 0.43 VCC = 1250 V, IC = 54 A, RG = 33 , VGE = 15 V, L = 2400 nH, inductive load Tvj = 25 C 350 Tvj = 125 C 350 Tvj = 25 C 280 Tvj = 125 C 280 VCC = 1250 V, IC = 54 A, RG = 33 , VGE = 15 V, L = 2400 nH, inductive load Tvj = 25 C 810 Tvj = 125 C 910 Tvj = 25 C 370 Tvj = 125 C 430 Tvj = 25 C 36 VCC = 1250 V, IC = 54 A, VGE = 15 V, RG = 33 , L = 2400 nH, inductive load, FWD: 1/2 5SLX12L2515 VCC = 1250 V, IC = 54 A, VGE = 15 V, RG = 33 , L = 2400 nH, inductive load nF ns ns ns ns mJ Tvj = 125 C 48 Tvj = 25 C 68 mJ Tvj = 125 C tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 2000 V, VCEM 2500 V 85 250 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1317-01 11 11 page 2 of 5 5SMX 12L2516 Mechanical properties Parameter Unit Overall die L x W exposed L x W (except gate pad) front metal Dimensions gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 + Al back (C) AlSi1 + TiNiAg 12.4 x 12.4 mm 9.0 x 9.0 mm 1.46 x 1.61 mm 310 20 m 4+8 m 1.8 + 1.2 m For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. 1.610.05 +0.04 1.90-0 +0.04 9.00 -0 12.38 0.05 10.67 Outline drawing Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1317-01 11 page 3 of 5 5SMX 12L2516 162 162 VCE = 20 V 135 135 25 C 108 108 IC [A] IC [A] 125 C 81 81 54 54 27 27 125 C 25 C VGE = 15 V 0 0 0 1 2 3 4 5 6 7 0 2 4 VCE [V] Fig. 1 8 10 Typical on-state characteristics Fig. 2 14 16 Typical transfer characteristics 120 VCC = 1250 V RG = 33 ohm VGE = 15 V Tvj = 125 C L = 2.4 H 250 Eon 100 Eoff 200 80 Eon, Eoff [mJ] Eoff 150 60 40 100 Eon VCC = 1250 V IC = 54 A VGE = 15 V Tvj = 125 C L = 2.4 H 20 50 Esw [mJ] = 0.94 x 10-2 x IC2 + 1.36 x IC + 9.77 0 0 0 27 54 81 108 135 0 162 Typical switching characteristics vs collector current 20 40 60 80 100 120 140 RG [ohm] IC [A] Fig. 3 12 VGE [V] 300 Eon, Eoff [mJ] 6 Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1317-01 11 11 page 4 of 5 5SMX 12L2516 20 10 Cies VCC = 1250 V 15 C [nF] VGE [V] VCC = 1800 V 10 1 Coes Cres 5 VGE = 0 V fosc = 1 MHz Vosc = 50 mV IC = 54 A Tvj = 25 C 0 0.1 0.00 Fig. 5 0.10 0.20 0.30 Qg [C] 0.40 Typical gate charge characteristics 0.50 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1317-01 11 11