ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 2500
V
IC = 54
A
Die size: 12.4 x 12.4 mm
Doc. No. 5SYA 1317-01 11 11
• Ultra low loss thin IGBT die
• Highly rugged SPT design
• Emitter metallisation optimized for press-pack packaging
• Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V 2500
V
DC collector current IC 54 A
Peak collector current ICM Limited by Tvjmax 108 A
Gate-emitter voltage VGES -20 20 V
IGBT short circuit SOA tpsc VCC = 2000 V, VCEM ≤ 2500 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Junction temperature Tvj -40 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
IGBT-Die
5SMX 12L2516
5SMX 12L2516
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1317-01 11 11 page 2 of 5
IGBT characteristic values 2)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 1 mA, Tvj = 25 °C 2500
V
Tvj = 25 °C 2.2 V
Collector-emitter
saturation voltage VCE sat IC = 54 A, VGE = 15 V Tvj = 125 °C 2.7 V
Tvj = 25 °C 100 µA
Collector cut-off current ICES VCE = 2500 V, VGE = 0 V Tvj = 125 °C 1000
µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 10 mA, VCE = VGE, Tvj = 25 °C 5 7.5 V
Gate charge Qge IC = 54 A, VCE = 1250 V, VGE = -15 ..15 V 480 nC
Input capacitance Cies 6.7
Output capacitance Coes 0.43
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 0.14 nF
Internal gate resistance RGint 5 Ω
Tvj = 25 °C 350
Turn-on delay time td(on) Tvj = 125 °C 350 ns
Tvj = 25 °C 280
Rise time tr
VCC = 1250 V, IC = 54 A,
RG = 33 Ω, VGE = ±15 V,
Lσ = 2400 nH,
inductive load Tvj = 125 °C 280 ns
Tvj = 25 °C 810
Turn-off delay time td(off) Tvj = 125 °C 910 ns
Tvj = 25 °C 370
Fall time tf
VCC = 1250 V, IC = 54 A,
RG = 33 Ω, VGE = ±15 V,
Lσ = 2400 nH,
inductive load Tvj = 125 °C 430 ns
Tvj = 25 °C 36
Turn-on switching energy Eon
VCC = 1250 V, IC = 54 A,
VGE = ±15 V, RG = 33 Ω,
Lσ = 2400 nH,
inductive load,
FWD: ½ 5SLX12L2515 Tvj = 125 °C 48
mJ
Tvj = 25 °C 68
Turn-off switching energy Eoff
VCC = 1250 V, IC = 54 A,
VGE = ±15 V, RG = 33 Ω,
Lσ = 2400 nH,
inductive load Tvj = 125 °C 85 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 2000 V, VCEM ≤ 2500 V 250 A
2) Characteristic values according to IEC 60747 - 9
5SMX 12L2516
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1317-01 11 page 3 of 5
Mechanical properties
Parameter Unit
Overall die
L x W 12.4 x 12.4 mm
exposed
front metal
L x W (except gate pad) 9.0 x 9.0 mm
gate pad L x W 1.46 x 1.61 mm
Dimensions
thickness 310 ± 20 µm
front (E) AlSi1 + Al 4 + 8 µm
Metallization 3) back (C) AlSi1 + TiNiAg 1.8 + 1.2 µm
3) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline drawing
9.00+0.04
-0
10.67
12.38±0.05
1.61±0.05
1.90+0.04
-0
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
5SMX 12L2516
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1317-01 11 11 page 4 of 5
0
27
54
81
108
135
162
0 1 2 3 4 5 6 7
VCE [V]
IC [A]
VGE = 15 V
25 °C
125 °C
0
27
54
81
108
135
162
0 2 4 6 8 10 12 14 16
VGE [V]
IC [A]
VCE = 20 V
25 °C
125 °C
Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics
0
50
100
150
200
250
300
0 27 54 81 108 135 162
IC [A]
Eon, Eoff [mJ]
VCC = 1250 V
RG = 33 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 2.4 µH
Eon
Eoff
Esw [mJ] = 0.94 x 10-2 x IC2 + 1.36 x IC + 9.77
0
20
40
60
80
100
120
020 40 60 80 100 120 140
RG [ohm]
Eon, Eoff [mJ]
VCC = 1250 V
IC = 54 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 2.4 µH
Eon
Eoff
Fig. 3 Typical switching characteristics vs
collector current Fig. 4 Typical switching characteristics vs
gate resistor
5SMX 12L2516
ABB Switzerland Ltd, Semiconductors reserves the ri
ght to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1317-01 11 11
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
0
5
10
15
20
0.00 0.10 0.20 0.30 0.40 0.50
Qg [µC]
VGE [V]
V
CC
= 1250 V
IC = 54 A
Tvj = 25 °C
V
CC
= 1800 V
0.1
1
10
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
Cies
Coes
Cres
VGE = 0 V
fosc = 1 MHz
Vosc = 50 mV
Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs
collector-emitter voltage
