Standard Power MOSFETs 2N6761, 2N6762 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V ros(On) = 1.5Q and 2.0Q Features: 8 SOA is power-dissipation limited m Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance m@ Majority carrier device The 2N6761 and 2N6762 are n-channel enhancement- mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. These types are supplied in the JEDEC TO-204AA steel package. Absolute Maximum Ratings Drain -- Source Voltage Drain - Gate Voltage Gate Source Voltage Storage Temperature Range 3-484 File Number 1589 $s 92CS-3374t N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS DRAIN SOURCE (FLANGE ) 0 oO GATE 92CS-3780I JEDEC TO-204AA 420 75 (See Fig. 11) 30 Fig. 19 1 -5S* to 150Standard Power MOSFETs 2N6761, 2N6762 Electrical Characteristics @) Tc = 25C (Unless Otherwise Specified) Paremeter Type Min, | Typ. | Max. | Units Test Conditions BVpg5 Drain Source Breakdown Voltage | 2N6761 | 450 = ~ V_ | vgg=0 2N6762 | 500 - ~ v Ip = 4.0 ma V@sith) Gate Threshold Voltage ALL 2.0* = 4.0 Vv | Vos = Ves: Ip = 1 mA lassr Gate Body Leakage Forward ALL = = 100 nA | Vag = 20V lagga Gate Body Leakage Reverse ALL ~ ~ 100 nA | Vgg* -20V pss Zero Gate Voltage Drain Current A - 01 1.0 [ mA | Vog = 0.8 x Max. Rating, Veg = 0 Le - 0.2 40 mA | Vog = Max. Rating, Vag = 0, Te = 25C to 125C Voston) Static Drain-Source On-State 2N6761 - - 8.0" Vv | Vgs 7 10V, 1p = 44 Voltage 2ne762 | = 7 |v | Vqg~10V. tp = 45A Rpgsion) Static Drain-Source On-Stare 2N6761 - 15 2.0 Q | Vag = 10V, 1p = 2.5A Resistance (7) 2N6762 = 13 15 2 | Vag = 10V, Ip = 3.0A R, Static Drain-Source On-State 2N6761 - = a4 RQ | VGg = IOV, Ip = 2.5, To = 125C DS(on) Plmiance Oo 2N6762 ~ ~ 3.a* Q | Vgs = 10V, tg, = 3.04, Te = 125C 4 Forward Transconductance (1) ALL 25 35 75 | S(U) | Vos = 16V, Ip = 3A Sigg Input Capacitance ALL 350 | 600 | 800 pF - Vgg = 0. Vays = 25V. f= 1.0 MHz Coss Output Capacitance ALL 25 100 | 200 pF See Fig. 10 ig. Coss Reverse Transter Capacitance ALL 15 30 60 pF Yd ton} Turn-On Datay Time ALL ~ = 30 mM ) Vp 2 228V. Ip = 3A, Zo = 152 % Rise Time ALL = ~ 30 as | (See Figs. 13 and 14) tg lott} Turn-Oft Delay Time ALL ~ = 55 ns | (MOSFET switching times are essentially te Fall Time ALL = ~ 30 as independant of operating temperature.) Thermal Resistance Ring Junction-to-Case ALL = = 1.67" | oc/w Rincs Case-to-Sink ALL - 9.1 - SCAN | Mounting surface flat, smooth, and greased. Rinsa Junction-to-Ambient ALL - - 3 C/W | Feee Air Oparation Body-Drain Diode Ratings and Characteristics 's Continuous Source Current | 2N6761 = = 40 A Modified MCISFET symbot D (Body Diode) '2N6762 = = ro showing the integral reverse P-N junction rectifier. G { 'sm Pulsed Source Current 2N6761 = = 60 A (Body Diode} 2Ne72 | = 7.0 4s Vsp Diode Forward Voltage (7) 2ne761 | 065 | - 13 V_| Te = 28C, Ig = 4A, Vag = 0 2N6762 | 0.7 ~ 1a Vi | Te = 25C, Ig =4.5A, Vag = 0 try Reverse Recovery Time ALL 500 = ms | Ty = 150C, tp = Iggy, dtp /dt = 100 Alus Gap _ Reverse Recovered Charge ACL = 7.0 = uC [Ty = 150C, 1g = Iggy, dtp/dt = 100 A/us *JEDEC registered values, (1) Putse Test: Pulse Width 300 usec, Duty Cycle < 2% L E, = 0.5BVpsg Ve * 0.758Vps5 VARY tp TO OBTAIN REQUIRED PEAK i t DUT Ves * 20V 4 Ve L By T= Vo Lor. Fig. 1 Clamped inductive Test Circuit Ip, GRAIN CURRENT (AMPERES) t 100 Vig. ORAIN-TO-SOURCE VOLTAGI: (VOLTS) Fig. 3 Typical Output Characteristics 2 Ip. ORAIN CURRENT (AMPERES) Fig, 2 Clamped inductive Waveforms Ty = 1250C t Ty= 2506 I Ty = -5506 1 2 3 4 $ ? Vas. GATE TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Typical Transfer Characteristics 3-485Standard Power MOSFETs 2N6761, 2N6762 3-486 Up, DRAIN CURRENT (AMPERES) a 2 4 6 8 19 Vps, DRAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. 5 Typical Saturation Characteristics (2N6761) Ny o - Qts. TRANSCONDUCTANCE (SIEMENS) Vpg = 16V 0 1 2 ji 4 5 ig. ORAIN CURRENT (AMPERES) Fig. 7 Typical Transconductarice Vs. Drain Current 22 > > oo Aipstany ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZEQ) S a 0.2 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ip. DRAIN CURRENT (AMPERES) lized Typical On-Resi Vs. Te ip, DRAIN CURRENT (AMPERES! 0 2 4 6 a W Vg. DRAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. 6 Typical Saturation Characteristics (2N6762) 10 20 50 100 200 500 C, CAPACITANCE (pF) Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 8 Maximum Safe Operating Area 1600 200 400 a ig 20 nu oy 50 Vos. BRAIN-TO-SOURCE VOLTAGE (VGLTS} Fig. 10 Typical Capacitance Vs, Drain-to-Source VoltageStandard Power MOSFETs Py. POWER DISSIPATION (WATTS) 80 $0 - op 40 a X +4 + he +--+ - + 20 |- ate tN 8 20 4 60 8s = 100120140 Te, CASE TEMPERATURE (90) Fig. 11 -- Power Vs. Temperature Derating Curve Vuo = 225V TE PRE = thHr Mi Vo tps Vas To SCOPE Fig. 13 Switching Time Tast Circuit ig, SOURCE CURRENT (AMPERES) 2N6761, 2N6762 (syq, 2NB762 ts, 2N6762 1 Vp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 12 Typical Body-Drain Diode Forward Voltage VGS fon) INPUT, j . | sony) 5 505, 1% / VGs (oft) d INPUT PULSE INPUT PULSE " RISE TIME FALL TIME "d ton) > 4 (ott) E, tym Vos (ott) on, QUTPUT, Vo ey Fig. 14 Switching Time bow 3-487High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65